Session 3: Monte Carlo 2
Chairperson: C. Jungemann
14:30 | First Self-Consistent Full-Band-2D Monte Carlo-2D Poisson Device Solver for Modeling SiGe Heterojunction p-Channel Devices S. Krishnan, D. Vasileska, and M. Fischetti1 Arizona State University, USA 1University of Massechusetts, USA | ||
14:45 | Monte Carlo Simulation of Double Gate MOSFET Including Multi Sub-band Description J. Saint-Martin, A. Bournel, F. Monsef, C. Chassat, and P. Dollfus Universite Paris Sud, France | ||
15:00 | An Improved Wigner Monte-Carlo Technique for the Self-consistent Simulation of RTDs D. Querlioz, P. Dollfus, V.-L. Do, and V.-L. Nguyen1 Universite Paris Sud, France 1VAST, Vietnam | ||
15:15 | Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices V. Sverdlov, T. Grasser, H. Kosina, and S. Selberherr TU Vienna, Austria | ||
15:30 | Kinetic Monte-Carlo Simulations of Germanium Epitaxial Growth on Silicon R. Akis and D. Ferry Arizona State University, USA | ||
15:45 | Self-consistent Ion Transport Simulation in Carbon Nanotube Channels J. Eschermann, Y. Li1, T. Van der Straaten1, and U. Ravaioli1 TU Munich, Germany 1University of Illinois at Urbana, USA |