IWCE-14 Extended Abstracts (2010)

• A. Alarcon, A. Benali, A. Padro, G. Albareda, F.L. Traversa, X. Oriols:
  "The BITLLES Simulator for Nanoscale Devices";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 219 - 222.
  
  
• M. Aldegunde, A. Martinez, A. Asenov:
  "Impact of Scattering on the Performance of a Si GAA Nanowire FETs: From Diffusive to Ballistic Regime";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 121 - 124.
  
  
• C. Alexander, A. Asenov:
  "`ab initio´ Surface Roughness Scattering in 3D Monte Carlo Transport Simulations";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 167 - 170.
  
  
• N. Ashraf, D. Vasileska:
  "3D Ensemble Monte Carlo Device Simulations of Random Trap Induced Degradation in Drain Current and in Threshold Voltage in the Presence of Random Dopant Distributions for 45 nm Gate Length MOSFETs";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 231 - 234.
  
  
• E. Bellotti, M. Moresco, F. Bertazzi:
  "Theory of High Field Transport and Impact Ionization in III-Nitride Semiconductors";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 171 - 174.
  
  
• F. Bertazzi, M. Goano, E. Bellotti:
  "Auger Lifetime in Narrow Gap Semiconductors";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 179 - 182.
  
  
• A. Betti, G. Fiori, G. Iannaccone:
  "Enhanced Shot Noise in Carbon Nanotube FETs due to Electron-Hole Interaction";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 303 - 306.
  
  
• J. Bieder, S.-M. Hong, C. Jungemann:
  "A Deterministic Boltzmann Solver for GaAs Devices Based on the Spherical Harmonics Expansion";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 31 - 34.
  
  
• V. Bonfiglio, G. Iannaccone:
  "Evaluation of Threshold Voltage Dispersion in 45 nm CMOS Technology with TCAD-Based Sensitivity Analysis.";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 101 - 104.
  
  
• F.M. Bufler, V. Aubry-Fortuna, A. Bournel, M. Braccioli, P. Dollfus, D. Esseni, C. Fiegna, F. Gamiz, M. De Michielis, P. Palestri, J. Saint-Martin, C. Sampedro, E. Sangiorgi, L. Selmi, P. Toniutti:
  "Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 319 - 322.
  
  
• N. Cavassilas, M. Bescond, F. Michelini:
  "Phonon-Induced Transverse-Mode Coupling in Double-Gate Transistor";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 315 - 318.
  
  
• Z. Chen, E. Polizzi:
  "Spectral Modeling and Propagation Schemes for Time-Dependent Quantum Systems";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 295 - 298.
  
  
• H.-W. Cheng, Y. Li:
  "Simulation of Raman Enhancement in SERS-Active Substrates with Au Layer Considering Different Geometry of Nanoparticles";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 263 - 266.
  
  
• H.-W. Cheng, C.-H. Yu, Y. Li:
  "Random Work Function Variation Induced Threshold Voltage Fluctuation in 16-nm Bulk FinFET Devices with High-K-Metal-Gate Material";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 331 - 334.
  
  
• Y. Cheng, I.M. Gamba, A. Majorana, C.-W. Shu:
  "Performance of a Discontinuous Galerkin Solver for Semiconductor Boltzmann Equations";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 227 - 230.
  
  
• G. Csaba, W. Porod:
  "Behavior of Nanomagnet Logic in the Presence of Thermal Noise";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 311 - 314.
  
  
• L.A. De Cienfuegos, S. Rodriguez-Bolivar, F. Gomez-Campos, T. Garcia, J.A. Lopez-Villanueva, J.E. Carceller, A. Martin-Lasanta, J.M. Cuerva, E. Bunuel, D.J. Cardenas:
  "Electronic Properties of Nanosize GNRs: The Role of the Anchoring Groups";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 275 - 278.
  
  
• N. Dehdashti, A. Kranti, I. Ferain, C.W. Lee, R. Yan, P. Razavi, R. Yu, J.-P. Colinge:
  "Emission and Absorption of Optical Phonons in Multigate Silicon Nanowire MOSFETs";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 351 - 354.
  
  
• B. Dellabetta, M.J. Gilbert:
  "The Effect of Disorder in Superfluid Graphene Bilayers";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 57 - 60.
  
  
• P. Dollfus, V. H. Nguyen, V.-N. Do, A. Bournel:
  "Quantum Transport of Dirac Fermions in Graphene Nanostructures";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 39 - 44.
  
  
• C. Ertler, P. Senekowitsch, J. Fabian, W. Pötz:
  "Self-Consistent Study of Transport in Mn-Doped Semiconductor Heterostructures";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 159 - 162.
  
  
• A. Fedoseyev, R. Arslanbekov, M. Turowski:
  "Simulations of Complex Nuclear Events from High Energy Ion Tracks in Integrated Circuits with 3D NanoTCAD";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 77 - 80.
  
  
• G. Fiori, S. Lebegue, A. Betti, P. Michetti, M. Klintenberg, O. Eriksson, G. Iannaccone:
  "A Multi-Scale Approach for Performance Assessment of Hydrogenated Graphene Field-Effect Transistors";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 299 - 302.
  
  
• D. Garetto, Y.M. Randriamihaja, D. Rideau, E. Dornel, W.F. Clark, A. Schmid, V. Huard, H. Jaouen, Y. Leblebici:
  "Small Signal Analysis of Electrically-Stressed Oxides with Poisson-Schroedinger Based Multiphonon Capture Model";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 327 - 330.
  
  
• F. Gomez-Campos, S. Rodriguez-Bolivar, A. Luque-Rodriguez, J.A. Lopez-Villanueva, J.E. Carceller:
  "Computational Study of InAs/GaAs Quantum Dot Arrays";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 223 - 226.
  
  
• P. Greck, C. Schindler, P. Vogl, T. Kubis:
  "The Nonequilibrium Green's Functions Method and Descendants: Ways to Avoid and to Go";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 145 - 146.
  
  
• X. Guan, S. Huang, J. Kang, J. Zhang, Z. Yu:
  "Design Optimization of GNR Tunneling-FETs for Low Voltage Operation Using EHT-Based NEGF Simulation";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 199 - 202.
  
  
• D. Guerra, R. Akis, D.K. Ferry, S.M. Goodnick, M. Saraniti, F.A. Marino:
  "Cellular Monte Carlo Study of RF Short-Channel Effects, Effective Gate Length, and Aspect Ratio in GaN and InGaAs HEMTs";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 105 - 108.
  
  
• F.O. Heinz, L. Smith:
  "Ab-initio Calibration of the Empirical Pseudopotential Method for Strained Silicon";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 287 - 290.
  
  
• K. Holland, N. Paydavosi, M. Vaidyanathan:
  "Self-Consistent Simulation of Array-Based CNFETs: Impact of Tube Pitch on RF Performance";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 291 - 294.
  
  
• J.W. Jerome, M.A. Ratner, J.D. Servaites, C.-W. Shu, S. Tan:
  "Simulation of the Buxton-Clarke Model for Organic Photovoltaic Cells";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 195 - 198.
  
  
• Z.B. Jiang, N. Kharche, G. Klimeck:
  "Valley Degeneracy in (110) Si Quantum Wells Strain and Misorientation Effects";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 271 - 274.
  
  
• X. Ju, S. Wartenburg, P. Lugli, M. Becherer, J. Kiermaier, S. Breitkreutz, D. Schmitt-Landsiedel, G. Csaba:
  "Computational Model of Partially Irradiated Nanodots for Field-coupled Computing Devices";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 307 - 310.
  
  
• C. Jungemann, S.-M. Hong, G. Matz:
  "High-Order Spherical Harmonics Solution of the Boltzmann Equation and Noise Modeling";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 17 - 22.
  
  
• G. Kannan, D. Vasileska:
  "Schred V2.0";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 211 - 214.
  
  
• A.A. Khan, P. Lugli, W. Porod, G. Csaba:
  "Development of a Highly Parallelized Micromagnetic Simulator on Graphics Processors";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 73 - 76.
  
  
• J. Kim, M.V. Fischetti:
  "Band Structure and Ballistic Conductance of Strained Si Nanowires";
  Poster: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 1 - 4.
  
  
• U. Kovac, C. Alexander, A. Asenov:
  "Statistical Estimation of Electrostatic and Transport Contributions to Device Parameter Variation";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 235 - 238.
  
  
• T. Kubis, G. Klimeck:
  "Rough Interfaces in THz Quantum Cascade Lasers";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 183 - 186.
  
  
• M.Y.A. Lamrani, M.J. Gilbert:
  "Supersolid in Thermal Phase Diagram of Symmetric Electron-Hole Semiconductor Bilayer";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 347 - 350.
  
  
• S. Liao, M. Dutta, M.A. Stroscio:
  "Interface Optical Phonon Modes in Wurtzite Quantum Heterostructures";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 215 - 218.
  
  
• S. Liao, M. Dutta, M.A. Stroscio:
  "Multi-Color Photodetector based on Quantum Dots and Resonant-Tunneling Diodes Coupled with Conductive Polymers";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 267 - 270.
  
  
• A. Makarov, V. Sverdlov, S. Selberherr:
  "A Monte Carlo Simulation of Reproducible Hysteresis in RRAM";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 35 - 38.
  
  
• P. Marconcini, D. Logoteta, M. Fagotti, M. Macucci:
  "Numerical Solution of the Dirac Equation for an Armchair Graphene Nanoribbon in the Presence of a Transversally Variable Potential";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 53 - 56.
  
  
• F.A. Marino, D. Guerra, D.K. Ferry, S.M. Goodnick, M. Saraniti:
  "Cellular Monte Carlo Investigation of InAs and InGaAs Quantum Well Field Effect Transistors";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 109 - 112.
  
  
• A. Martinez, A. Asenov, M. Aldegunde:
  "Channel Length Dependence of Discrete Dopant effects in narrow Si Nanowire Transistors: A full 3D NEGF study";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 81 - 84.
  
  
• A. Martinez, B. Benbakhti, A. Asenov:
  "Effect of the Channel Thickness on the Performance of Implant-Free Quantum-Well MOSFETs";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 113 - 116.
  
  
• G. Mascali, V. Romano:
  "Numerical Simulation of a Subband Model Based on the Maximum Entropy Principle";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 129 - 132.
  
  
• K. Matsuda:
  "Equivalent-circuit Model for Electrostatic Micro-torsion Mirror";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 141 - 144.
  
  
• A. Matyas, S. Söntges, P. Lugli, C. Jirauschek, S. Katz, A. Vizbaras, M.C. Amann:
  "Coupled Carrier-Field Monte-Carlo Analysis of Mid-IR Quantum Cascade Lasers";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 191 - 194.
  
  
• F. Mazzamuto, V. H. Nguyen, V.-N. Do, C. Caer, C. Chassat, J. Saint-Martin, P. Dollfus:
  "Phonon and Electron Transport in Graphene Nanoribbons";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 49 - 52.
  
  
• H. Mera, M. Persson, Y.M. Niquet, M. Bescond:
  "Effective Mass Versus Tight-Binding: Where is the Discord?";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 343 - 346.
  
  
• F. Michelini, M.-A. Dupertuis, E. Kapon:
  "Novel Artificial Molecules: Optoelectronic Properties of two Quantum Dots Coupled by a Quantum Wire";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 255 - 258.
  
  
• F. Michelini, N. Pons, N. Cavassilas, M. Bescond, M. Szczap:
  "Spin-Orbital Strain Effects in Semiconductors";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 147 - 150.
  
  
• G. Mil´nikov, N. Mori, Y. Kamakura, H. Minari:
  "Subband Representation in Atomistic Transport Simulation of Nanowire Transistors";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 279 - 282.
  
  
• I. Moore, C. Millar, S. Roy, A. Asenov:
  "Brownian Noise in FET Based Nano-Pore Sensing: a 3D Simulation Study";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 27 - 30.
  
  
• O. Morandi, F. Schürrer:
  "Quantum Phase-Space Approach to the Transport Simulation in Graphene Devices.";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 203 - 206.
  
  
• N. Neophytou, H. Kosina, G. Klimeck:
  "A Comprehensive Atomistic Analysis of Bandstructure Velocities in Si Nanowires";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 93 - 96.
  
  
• Y.M. Niquet, M. Persson, H. Mera, W. Zhang, C. Delerue, G. Allan, M. Diarra, E. Wang:
  "Impurity and Phonon-Limited Electron Mobilities in <110>-Oriented Silicon Nanowires";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 13 - 16.
  
  
• T. Numata, S. Uno, K. Nakazato, G. Mil´nikov, Y. Kamakura, N. Mori:
  "Simplified Calculation Method of Electron Subband Profile in Ballistic Nanowire MOSFET";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 125 - 128.
  
  
• T. O´Regan, P. Hurley, M. Fischetti:
  "Delta-Doped HfO₂/In_0.53Ga_0.47As Inversion Layers: Density-Of-States Bottleneck and Electron Mobility";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 133 - 136.
  
  
• A. Paul, M. Luisier, G. Klimeck:
  "Atomistic Modeling of the Phonon Dispersion and Lattice Properties of Free-Standing <100> Si Nanowires";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 283 - 286.
  
  
• A. Pecchia, G. Penazzi:
  "Point Defect Scattering in Silicon Nanowires";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 9 - 12.
  
  
• M. Penna, F. Bertazzi, M. Goano:
  "A Reduced-Order Technique for the Acceleration of Electronic Structure Calculations";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 65 - 68.
  
  
• G. Pennelli:
  "Stackable Devices Based on Chaotic Conduction";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 251 - 254.
  
  
• C. Pennetta, A. Carbone, M. Tizzoni, L. Reggiani:
  "A Percolative Approach to Transport and Excess Noise in Polyacene Semiconductors";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 23 - 26.
  
  
• A.T. Pham, C. Jungemann, B. Meinerzhagen:
  "Simulation of Landau Quantization Effects due to Strong Magnetic Fields in (110) Si Hole Inversion Layers";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 335 - 338.
  
  
• N. Pons, N. Cavassilas, M. Bescond, F. Michelini, L. Raymond, M. Lannoo:
  "Three-Dimensional k.p Quantum Simulations of p-Type Nanowire MOS Transistors: Influence of Ionized Impurity";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 89 - 92.
  
  
• M. Pourfath, A. Yazdanpanah, M. Fathipour, H. Kosina:
  "On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 45 - 48.
  
  
• J. Qian, M.A. Stroscio, M. Dutta:
  "Phonon Bottleneck Effects in Rectangular Graphene Quantum Dots";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 207 - 210.
  
  
• P. Ramaprasad, S.M. Goodnick, M. Saraniti:
  "Catalytic Surfaces of Silicon Nanopores, a Brownian Dynamics Study";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 137 - 140.
  
  
• C. Riddet, J.R. Watling, K.H. Chan, A. Asenov, B. De Jaeger, J. Mitard, M. Meuris:
  "Monte Carlo Simulation Study of Hole Mobility in Germanium MOS Inversion Layers";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 239 - 242.
  
  
• G. Romano, M. Auf der Maur, A. Di Carlo:
  "Handshaking Multiscale Thermal Model of Nanostructured Devices";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 69 - 72.
  
  
• T. Sadi, J.-L. Thobel, F. Dessenne, C. Dalle:
  "Self-Consistent Electrothermal Monte Carlo Modeling of Nanowire MISFETs";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 247 - 250.
  
  
• F. Schanovsky, W. Gös, T. Grasser:
  "Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 163 - 166.
  
  
• D. Sels, B. Soree, G. Groeseneken:
  "2-D Rotational Invariant Multi Sub Band Schrödinger-Poisson Solver to Model Nanowire Transistors";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 85 - 88.
  
  
• I. Semenikhin, V. Vyurkov, A. Orlikovsky:
  "Advanced T-Matrix Method for Quantum Simulation of Nanoscale Field-Effect Transistors";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 117 - 120.
  
  
• I. Semenikhin, V. Vyurkov, M. Zanuccoli, E. Sangiorgi, C. Fiegna:
  "Efficient Implementation of the Fourier Modal Method (RCWA) for the Optical Simulation of Optoelectronics Devices";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 187 - 190.
  
  
• M. Shin:
  "Quantum Transport in Nanowire p-type Schottky Barrier MOSFETs with the k·p Method";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 339 - 342.
  
  
• Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina:
  "Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band k*p Versus Tight Binding";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 5 - 8.
  
  
• M. Szczap, N. Cavassilas, F. Michelini:
  "Thirty-Band k · p Model for Si-Based Optoelectronics";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 259 - 262.
  
  
• V. Talbo, A. Valentin, S. Galdin-Retailleau, P. Dollfus:
  "Fully Self-Consistent Simulation of Silicon Nanocrystal-Based Single-Electron Transistors";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 151 - 154.
  
  
• T.-W. Tang, I.-O. Yoon, N. Sano, S. Jin, M.V. Fischetti, Y.J. Park:
  "Model-Comparison Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 61 - 64.
  
  
• I.M. Tienda-Luna, F.G Ruiz, A. Godoy, L. Donetti, F. Gamiz:
  "Effects of Deviations in the Cross-Section of Square Nanowires";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 97 - 100.
  
  
• M. Totaro, P. Marconcini, M. Macucci:
  "Ionized Donor Reordering in Typical Heterostructures";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 175 - 178.
  
  
• D. Vasileska, K. Raleva, S.M. Goodnick, Z. Aksamija, I. Knezevic:
  "Thermal Modeling of Nanodevices";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 355 - 358.
  
  
• W. Vitale, M. Mohamed, U. Ravaioli:
  "Monte Carlo Study of Transport Properties in Junctionless Transistors";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 243 - 246.
  
  
• M. Wenin, W. Pötz:
  "Simulation of Spin Transport and Magnetization Dynamics in FNF Structures within a Drift-Diffusion Model";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 155 - 158.
  
  
• A. Zaka, P. Palestri, D. Rideau, M. Iellina, E. Dornel, Q. Rafhay, C. Tavernier, H. Jaouen:
  "Programming Efficiency and Drain Disturb Trade-Off in Embedded Non Volatile Memories";
  Talk: Conference, Pisa, Italy; 2010-10-26 - 2010-10-29; in: "Abstracts of IWCE", (2010), 323 - 325.