IWCE-10 Proceedings (2004)

• S. Aboud, D. Marreiro, M. Saraniti, R. Eisenberg:
  "The Role of Long-Range Forces in Porin Channel Conduction";
  Journal of Computational Electronics, 4 (2005), 1-2; 175 - 178.
  
  
• F. Adamu-Lema, G. Roy, A. R. Brown, A. Asenov, S. Roy:
  "Intrinsic Parameter Fluctuations in Conventional MOSFETs at the Scaling Limit: A Statistical Study";
  Journal of Computational Electronics, 3 (2004), 3-4; 203 - 206.
  
  
• F. Affinito, R. Brunetti, C. Jacoboni, E. Piccinini, M. Rudan, A. Bigiani, P. Carloni:
  "A Simulative Model for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches";
  Journal of Computational Electronics, 4 (2005), 1-2; 171 - 174.
  
  
• S.S. Ahmed, D. Vasileska, C. Heitzinger, C. Ringhofer:
  "Quantum Potential Approach to Modeling Nanoscale MOSFETs";
  Journal of Computational Electronics, 4 (2005), 1-2; 57 - 61.
  
  
• M.G. Ancona, K. Lilja:
  "Multi-Dimensional Tunneling in Density-Gradient Theory";
  Journal of Computational Electronics, 3 (2004), 3-4; 189 - 192.
  
  
• P. Andrei, I. Mayergoyz:
  "Random Doping Fluctuations of Small-Signal Parameters in Nanoscale Semiconductor Devices";
  Journal of Computational Electronics, 3 (2004), 3-4; 211 - 214.
  
  
• A. Ashok, R. Akis, D. Vasileska, D.K. Ferry:
  "Theoretical Evidence of Spontaneous Spin Polarization in GaAs/AlGaAs Split-Gate Heterostructures";
  Journal of Computational Electronics, 4 (2005), 1-2; 125 - 128.
  
  
• J. Barker, A. Barmpoutis:
  "Smart Dust: Monte Carlo Simulation of Self-Organised Transport";
  Journal of Computational Electronics, 3 (2004), 3-4; 317 - 321.
  
  
• J.R. Barker, A. Martinez:
  "Vortex Flows in Semiconductor Device Quantum Channels: Time-Dependent Simulation";
  Journal of Computational Electronics, 3 (2004), 3-4; 401 - 405.
  
  
• M. Bescond, J.-L. Autran, N. Cavassilas, D. Munteanu, M. Lannoo:
  "Treatment of Point Defects in Nanowire MOSFETs Using the Non-Equilibrium Green's Function Formalism";
  Journal of Computational Electronics, 3 (2004), 3-4; 393 - 396.
  
  
• P. Bordone, A. Bertoni, C. Jacoboni:
  "Simulation of Entanglement Dynamics for Scattering between a Free and a Bound Carrier in a Quantum Wire";
  Journal of Computational Electronics, 3 (2004), 3-4; 407 - 410.
  
  
• J. Branlard, S.J. Aboud, S.M. Goodnick, M. Saraniti:
  "Efficient Memory Management for Cellular Monte Carlo Algorithm";
  Journal of Computational Electronics, 3 (2004), 3-4; 323 - 327.
  
  
• E. Cancellieri, P. Bordone, A. Bertoni, G. Ferrari, C. Jacoboni:
  "Wigner Function for Identical Particles";
  Journal of Computational Electronics, 3 (2004), 3-4; 411 - 415.
  
  
• C. Cheng, Q.H. Liu, J.-H. Lee, H.Z. Massoud:
  "Spectral Element Method for the Schrödinger-Poisson System";
  Journal of Computational Electronics, 3 (2004), 3-4; 417 - 421.
  
  
• P. Chiney, J. Branlard, S. Aboud, M. Saraniti, S. Goodnick:
  "Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs";
  Journal of Computational Electronics, 4 (2005), 1-2; 45 - 49.
  
  
• G. Csaba, P. Lugli, A. Csurgay, W. Porod:
  "Simulation of Power Gain and Dissipation in Field-Coupled Nanomagnets";
  Journal of Computational Electronics, 4 (2005), 1-2; 105 - 110.
  
  
• D. Csontos, S.E. Ulloa:
  "Modeling of Transport through Submicron Semiconductor Structures: A Direct Solution to the Coupled Poisson-Boltzmann Equations";
  Journal of Computational Electronics, 3 (2004), 3-4; 215 - 219.
  
  
• P. Dollfus, J.E. Velazquez, A. Bournel, S. Galdin-Retailleau:
  "3D Monte Carlo Analysis of Discrete Dopant Effects on Electron Noise in Si Devices";
  Journal of Computational Electronics, 3 (2004), 3-4; 311 - 315.
  
  
• A. Domaingo, F. Schürrer:
  "Simulation of Schottky Barrier Diodes with a Direct Solver for the Boltzmann-Poisson System";
  Journal of Computational Electronics, 3 (2004), 3-4; 221 - 225.
  
  
• C. Duffy, P. Hasler:
  "Scaling pFET Hot-Electron Injection";
  Journal of Computational Electronics, 3 (2004), 3-4; 227 - 230.
  
  
• A. Fedoseyev, A. Przekwas, M. Turowski, M.S. Wartak:
  "Robust Computational Models of Quantum Transport in Electronic Devices";
  Journal of Computational Electronics, 3 (2004), 3-4; 231 - 234.
  
  
• G. Fiori, G. Iannaccone:
  "Code for the 3D Simulation of Nanoscale Semiconductor Devices, Including Drift-Diffusion and Ballistic Transport in 1D and 2D Subbands, and 3D Tunneling";
  Journal of Computational Electronics, 4 (2005), 1-2; 63 - 66.
  
  
• M.V. Fischetti, S.E. Laux, P.M. Solomon, A. Kumar:
  "Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and Mainstream VLSI Technology";
  Journal of Computational Electronics, 3 (2004), 3-4; 287 - 293.
  
  
• T. Frederiksen, M. Brandbyge, A.-P. Jauho, N. Lorente:
  "Modeling of Inelastic Transport in One-Dimensional Metallic Atomic Wires";
  Journal of Computational Electronics, 3 (2004), 3-4; 423 - 427.
  
  
• F. Gamiz, A. Godoy, C. Sampedro:
  "Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs";
  Journal of Computational Electronics, 3 (2004), 3-4; 295 - 298.
  
  
• A. Gehring, H. Kosina:
  "Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method";
  Journal of Computational Electronics, 4 (2005), 1-2; 67 - 70.
  
  
• A. Gehring, S. Selberherr:
  "Evolution of Current Transport Models for Engineering Applications";
  Journal of Computational Electronics, 3 (2004), 3-4; 149 - 155.
  
  
• M.J. Gilbert, D.K. Ferry:
  "Full Quantum Mechanical Simulation of Ultra-Small Silicon Devices in Three-Dimensions: Physics and Issues";
  Journal of Computational Electronics, 3 (2004), 3-4; 355 - 358.
  
  
• M.D. Giles:
  "TCAD Process/Device Modeling Challenges and Opportunities for the Next Decade";
  Journal of Computational Electronics, 3 (2004), 3-4; 177 - 182.
  
  
• M. Girlanda, I. Cacelli, A. Ferretti, M. Macucci:
  "Numerical Investigation of a Molecular Switch Based on Conformational Change, with the Inclusion of Contacts";
  Journal of Computational Electronics, 4 (2005), 1-2; 87 - 90.
  
  
• E. Gnani, S. Reggiani, M. Rudan, G. Baccarani:
  "On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs";
  Journal of Computational Electronics, 4 (2005), 1-2; 71 - 74.
  
  
• F. Gomez-Campos, S. Rodriguez-Bolivar, J.E. Carceller:
  "An Efficient Monte Carlo Procedure for Studying Hole Transport in Doped Semiconductors";
  Journal of Computational Electronics, 3 (2004), 3-4; 329 - 332.
  
  
• P. Gonzalez, A. Godoy, F. Gamiz, J.A. Carrillo:
  "Accurate Deterministic Numerical Simulation of p-n Junctions";
  Journal of Computational Electronics, 3 (2004), 3-4; 235 - 238.
  
  
• T. Grasser, R. Kosik, C. Jungemann, B. Meinerzhagen, H. Kosina, S. Selberherr:
  "A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Semiconductor Devices";
  Journal of Computational Electronics, 3 (2004), 3-4; 183 - 187.
  
  
• J. Guo, S. Datta, M.P. Anantram, M. Lundstrom:
  "Atomistic Simulation of Carbon Nanotube Field-Effect Transistors Using Non-Equilibrium Green's Function Formalism";
  Journal of Computational Electronics, 3 (2004), 3-4; 373 - 377.
  
  
• R. Hagenbeck, S. Decker, F. Lau, P. Haibach, J.-M. Schley, M. Isler, T. Mikolajick, G. Tempel:
  "Modeling and Simulation of Electron Injection during Programming in Twin Flash^TM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept";
  Journal of Computational Electronics, 3 (2004), 3-4; 239 - 242.
  
  
• S. Hasan, J. Guo, M. Vaidyanathan, M.A. Alam, M. Lundstrom:
  "Monte Carlo Simulation of Carbon Nanotube Devices";
  Journal of Computational Electronics, 3 (2004), 3-4; 333 - 336.
  
  
• S. Hu, K. Hess:
  "An Application of the Recombination and Generation Theory by Shockley, Read and Hall to Biological Ion Channels";
  Journal of Computational Electronics, 4 (2005), 1-2; 153 - 156.
  
  
• G. Iannaccone:
  "Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors";
  Journal of Computational Electronics, 3 (2004), 3-4; 199 - 202.
  
  
• Z. Ikonic, P. Harrison, R.W. Kelsall:
  "On the Formation of Periodic Electric Field Domains in p-Si/SiGe Quantum Cascade Structures";
  Journal of Computational Electronics, 4 (2005), 1-2; 11 - 14.
  
  
• A.-P. Jauho, T. Novotny, A. Donarini, C. Flindt:
  "Modeling of Quantum Electromechanical Systems";
  Journal of Computational Electronics, 3 (2004), 3-4; 367 - 371.
  
  
• Y.S. Joe, J.S. Kim, E.R. Hedin, R.M. Cosby, A.M. Satanin:
  "Fano Resonance through Quantum Dots in Tunable Aharonov-Bohm Rings";
  Journal of Computational Electronics, 4 (2005), 1-2; 129 - 133.
  
  
• C. Jungemann, B. Meinerzhagen:
  "A Legendre Polynomial Solver for the Langevin Boltzmann Equation";
  Journal of Computational Electronics, 3 (2004), 3-4; 157 - 160.
  
  
• S. Kaya, A. Al-Ahmadi:
  "Search for Optimum and Scalable COSMOS";
  Journal of Computational Electronics, 4 (2005), 1-2; 119 - 123.
  
  
• H.R. Khan, D. Vasileska, S.S. Ahmed, C. Ringhofer, C. Heitzinger:
  "Modeling of FinFET: 3D MC Simulation Using FMM and Unintentional Doping Effects on Device Operation";
  Journal of Computational Electronics, 3 (2004), 3-4; 337 - 340.
  
  
• D. Kienle, A.W. Ghosh:
  "Atomistic Modeling of Metal-Nanotube Contacts";
  Journal of Computational Electronics, 4 (2005), 1-2; 97 - 100.
  
  
• I. Knezevic, D.K. Ferry:
  "A Quantum Many-Body Density Matrix Model for Sub-Femtosecond Transport in Mesoscopic Structures";
  Journal of Computational Electronics, 3 (2004), 3-4; 359 - 362.
  
  
• S. Krishnan, D. Vasileska, M.V. Fischetti:
  "Band-Structure and Quantum Effects on Hole Transport in p-MOSFETs";
  Journal of Computational Electronics, 4 (2005), 1-2; 27 - 30.
  
  
• H. Kufluoglu, M.A. Alam:
  "A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability";
  Journal of Computational Electronics, 3 (2004), 3-4; 165 - 169.
  
  
• D. Labukhin, X. Li:
  "Three-Dimensional Finite-Difference Time-Domain Simulation of Facet Reflection through Parallel Computing";
  Journal of Computational Electronics, 4 (2005), 1-2; 15 - 19.
  
  
• L. Latessa, A. Pecchia, A. Di Carlo, P. Lugli:
  "Quantum Capacitance Effects in Carbon Nanotube Field-Effect Devices";
  Journal of Computational Electronics, 4 (2005), 1-2; 51 - 55.
  
  
• S.E. Laux:
  "Arbitrary Crystallographic Orientation in QDAME with Ge 7.5nm DGFET Examples";
  Journal of Computational Electronics, 3 (2004), 3-4; 379 - 385.
  
  
• A. Lee, A. R. Brown, A. Asenov, S. Roy:
  "Random Telegraph Noise in 30nm FETs with Conventional and High-κ Dielectrics";
  Journal of Computational Electronics, 3 (2004), 3-4; 247 - 250.
  
  
• K.-I. Lee, Y.-J. Park, T.A. Van der Straaten, G. Kathawala, U. Ravaioli:
  "Simulation of Ion Conduction in the ompF Porin Channel Using BioMOCA";
  Journal of Computational Electronics, 4 (2005), 1-2; 157 - 160.
  
  
• L. Lever, R. Kelsall, R. Bushby:
  "A Band Transport Model for Highly Ordered Discotic Mesophases";
  Journal of Computational Electronics, 4 (2005), 1-2; 101 - 104.
  
  
• Y. Li:
  "Magnetization and Magnetic Susceptibility in Nanoscale Vertically Coupled Semiconductor Quantum Rings";
  Journal of Computational Electronics, 4 (2005), 1-2; 135 - 138.
  
  
• Y. Li, J.-W. Lee, H.-M. Chou:
  "Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors";
  Journal of Computational Electronics, 3 (2004), 3-4; 251 - 255.
  
  
• Y. Li, D. Lu, K. Schulten, U. Ravaioli, S.V. Rotkin:
  "Screening of Water Dipoles inside Finite-Length Armchair Carbon Nanotubes";
  Journal of Computational Electronics, 4 (2005), 1-2; 161 - 165.
  
  
• Y. Li, S.-M. Yu:
  "A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors";
  Journal of Computational Electronics, 3 (2004), 3-4; 257 - 261.
  
  
• X. Liu, C.-W. Shu:
  "Local Discontinuous Galerkin Methods for Moment Models in Device Simulations: Formulation and One Dimensional Results";
  Journal of Computational Electronics, 3 (2004), 3-4; 263 - 267.
  
  
• Y. Lu, C.S. Lent:
  "Theoretical Study of Molecular Quantum-Dot Cellular Automata";
  Journal of Computational Electronics, 4 (2005), 1-2; 115 - 118.
  
  
• M. Lundstrom, G. Klimeck:
  "Editorial";
  Journal of Computational Electronics, 3 (2004), 3-4; 147.
  
  
• W. Ma, S. Kaya:
  "RF Performance of Strained SiGe p-MOSFETs: Linearity and Gain";
  Journal of Computational Electronics, 3 (2004), 3-4; 269 - 272.
  
  
• M. Macucci, P. Marconcini:
  "High-Resolution Numerical Study of Conductance and Noise Imaging of Mesoscopic Devices";
  Journal of Computational Electronics, 3 (2004), 3-4; 429 - 433.
  
  
• D. Marreiro, S. Aboud, M. Saraniti, R. Eisenberg:
  "Error Analysis of the Poisson P³M Force Field Scheme for Particle-Based Simulations of Biological Systems";
  Journal of Computational Electronics, 4 (2005), 1-2; 179 - 183.
  
  
• K. Matsuda:
  "Strain-Dependent Hole Masses and Piezoresistive Properties of Silicon";
  Journal of Computational Electronics, 3 (2004), 3-4; 273 - 276.
  
  
• I.D. Mayergoyz, Z. Zhang:
  "Modeling of the Electrostatic (Plasmon) Resonances in Metallic and Semiconductor Nanoparticles";
  Journal of Computational Electronics, 4 (2005), 1-2; 139 - 143.
  
  
• C. Millar, A. Asenov, A. R. Brown, S. Roy:
  "Tracking the Propagation of Individual Ions through Ion Channels with Nano-MOSFETs";
  Journal of Computational Electronics, 4 (2005), 1-2; 185 - 188.
  
  
• V. Narayanan, E.C. Kan:
  "A Critical Examination of the Basis of Macroscopic Quantum Transport Approaches";
  Journal of Computational Electronics, 3 (2004), 3-4; 435 - 438.
  
  
• M. Nedjalkov, S. Ahmed, D. Vasileska:
  "A Self-Consistent Event Biasing Scheme for Statistical Enhancement";
  Journal of Computational Electronics, 3 (2004), 3-4; 305 - 309.
  
  
• C. Negulescu, N. Ben Abdallah, E. Polizzi, M. Mouis:
  "Simulation Schemes in 2D Nanoscale MOSFETs: A WKB Based Method";
  Journal of Computational Electronics, 3 (2004), 3-4; 397 - 400.
  
  
• N. Neophytou, M. Lundstrom, J. Guo:
  "3D Electrostatics of Carbon Nanotube Field-Effect Transistors";
  Journal of Computational Electronics, 3 (2004), 3-4; 277 - 280.
  
  
• C. D. Nguyen, A.T. Pham, C. Jungemann, B. Meinerzhagen:
  "TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si_1-x Ge_x Dual Channel p-MOSFETs on (001) Relaxed Si_1-y Ge_y";
  Journal of Computational Electronics, 3 (2004), 3-4; 193 - 197.
  
  
• B. Obradovic, P. Matagne, L. Shifren, E. Wang, M. Stettler, J. He, M.D. Giles:
  "A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement";
  Journal of Computational Electronics, 3 (2004), 3-4; 161 - 164.
  
  
• M. Okamoto, N. Mori:
  "Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors";
  Journal of Computational Electronics, 3 (2004), 3-4; 439 - 442.
  
  
• A. Pecchia, A. Di Carlo, A. Gagliardi, T.A. Niehaus, T. Frauenheim:
  "Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions";
  Journal of Computational Electronics, 4 (2005), 1-2; 79 - 82.
  
  
• E. Polizzi, A. Sameh:
  "Parallel Algorithms for Large-Scale Nanoelectronics Simulations Using NESSIE";
  Journal of Computational Electronics, 3 (2004), 3-4; 363 - 366.
  
  
• M. Pourfath, E. Ungersboeck, A. Gehring, H. Kosina, S. Selberherr, W.-J. Park, B.-H. Cheong:
  "Numerical Analysis of Coaxial Double-Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
  Journal of Computational Electronics, 4 (2005), 1-2; 75 - 78.
  
  
• A. Rahman, M. Lundstrom, A.W. Ghosh:
  "Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers";
  Journal of Computational Electronics, 3 (2004), 3-4; 281 - 285.
  
  
• A. Raichura, M. Dutta, M.A. Stroscio:
  "Acoustic Phonons and Phonon Bottleneck in Single-Wall Nanotubes";
  Journal of Computational Electronics, 4 (2005), 1-2; 91 - 95.
  
  
• R.F. Rakowski, S. Kaya, J. Fonseca:
  "Electro-Chemical Modeling Challenges of Biological Ion Pumps";
  Journal of Computational Electronics, 4 (2005), 1-2; 189 - 193.
  
  
• T. Rakshit, G.-C. Liang, A.W. Ghosh, S. Datta:
  "Modeling Challenges in Molecular Electronics on Silicon";
  Journal of Computational Electronics, 4 (2005), 1-2; 83 - 86.
  
  
• R. Ravishankar, G. Kathawala, U. Ravaioli, S. Hasan, M. Lundstrom:
  "Comparison of Monte Carlo and NEGF Simulations of Double-Gate MOSFETs";
  Journal of Computational Electronics, 4 (2005), 1-2; 39 - 43.
  
  
• C. Riddet, A. R. Brown, C. Alexander, J.R. Watling, S. Roy, A. Asenov:
  "Scattering from Body Thickness Fluctuations in Double-Gate MOSFETs: An ab-initio Monte Carlo Simulation Study";
  Journal of Computational Electronics, 3 (2004), 3-4; 341 - 345.
  
  
• F. Rodriguez-Salazar, J.R. Barker:
  "Hilbert Graph: An Expandable Interconnection for Clusters";
  Journal of Computational Electronics, 4 (2005), 1-2; 145 - 148.
  
  
• M. Rosini, A. Bertoni, P. Bordone, C. Jacoboni:
  "Single-Electron Transport and Entanglement Induced by Surface Acoustic Waves versus Free Ballistic Propagation in Coupled Quantum Wires";
  Journal of Computational Electronics, 3 (2004), 3-4; 443 - 447.
  
  
• J. Saint Martin, V. Aubry-Fortuna, A. Bournel, P. Dollfus, S. Galdin, C. Chassat:
  "Influence of Ballistic Effects in Ultra-Small MOSFETs";
  Journal of Computational Electronics, 3 (2004), 3-4; 207 - 210.
  
  
• A. Sakai, Y. Kamakura, K. Taniguchi:
  "Quantum Lattice-Gas Automata Simulation of Electronic Wave Propagation in Nanostructures";
  Journal of Computational Electronics, 3 (2004), 3-4; 449 - 452.
  
  
• A.M. Satanin, Y.S. Joe:
  "Manipulating of Resonances in Conductance of an Electron Waveguide with Anti-Dots";
  Journal of Computational Electronics, 4 (2005), 1-2; 149 - 152.
  
  
• M.A. Stroscio, M. Dutta, D. Ramadurai, P. Shi, M. Vasudev, D. Alexson, B. Kohanpour, A. Sethuraman, V. Saini, A. Raichura, J. Yang:
  "Optical and Electrical Properties of Colloidal Quantum Dots in Electrolytic Environments: Using Biomolecular Links in Chemically-Directed Assembly of Quantum Dot Networks";
  Journal of Computational Electronics, 4 (2005), 1-2; 21 - 25.
  
  
• H. Takada, N. Mori:
  "Three-Dimensional Quantum Transport Simulation of Ultra-Small FinFETs";
  Journal of Computational Electronics, 4 (2005), 1-2; 31 - 34.
  
  
• R. Tanabe, T. Yamasaki, Y. Ashizawa, H. Oka:
  "Analysis of Strained-Si Device Including Quantum Effect";
  Journal of Computational Electronics, 3 (2004), 3-4; 387 - 391.
  
  
• K. Tarik, S. Ahmed, D. Vasileska, T.J. Thornton:
  "Subthreshold Mobility Extraction for SOI-MESFETs";
  Journal of Computational Electronics, 3 (2004), 3-4; 243 - 246.
  
  
• H. Tsuchiya, A. Svizhenko, M.P. Anantram, M. Ogawa, T. Miyoshi:
  "Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano-MOS Simulation";
  Journal of Computational Electronics, 4 (2005), 1-2; 35 - 38.
  
  
• J. Wang, E. Polizzi, A. Ghosh, S. Datta, M. Lundstrom:
  "A Quantum Mechanical Approach for the Simulation of Si/SiO₂ Interface Roughness Scattering in Silicon Nanowire Transistors";
  Journal of Computational Electronics, 3 (2004), 3-4; 453 - 457.
  
  
• B. Witzigmann, M. Aschwanden, V. Laino, M. Luisier, S. Odermatt, M. Streiff, A. Witzig, P. Royo, D. Vez:
  "Comprehensive Simulation of Vertical Cavity Surface Emitting Lasers: Inclusion of a Many-Body Gain Model";
  Journal of Computational Electronics, 4 (2005), 1-2; 7 - 10.
  
  
• B. Wu, T.-W. Tang:
  "The Effective Conduction Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation";
  Journal of Computational Electronics, 3 (2004), 3-4; 347 - 350.
  
  
• S. Yamakawa, S. Goodnick, S. Aboud, M. Saraniti:
  "Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AlGaN/GaN HEMTs";
  Journal of Computational Electronics, 3 (2004), 3-4; 299 - 303.
  
  
• L. Yang, J.R. Watling, F. Adamu-Lema, A. Asenov, J.R. Barker:
  "Simulations of Sub-100nm Strained Si MOSFETs with High-κ Gate Stacks";
  Journal of Computational Electronics, 3 (2004), 3-4; 171 - 175.
  
  
• Z. Yang, T.A. Van der Straaten, U. Ravaioli, Y. Liu:
  "A Coupled 3D PNP/ECP Model for Ion Transport in Biological Ion Channels";
  Journal of Computational Electronics, 4 (2005), 1-2; 167 - 170.
  
  
• l.-X. Zhang, D.V. Melnikov, J.P. Leburton:
  "Simulation of Spin-Qubit Quantum Dot Circuit with Integrated Quantum Point Contact Read-Out";
  Journal of Computational Electronics, 4 (2005), 1-2; 111 - 114.
  
  
• B. Zorman, S. Krishnan, D. Vasileska, J. Xu, M. Van Schilfgaarde:
  "A First Principles Alloy Scattering Approach for Monte Carlo Hole Mobility Calculations";
  Journal of Computational Electronics, 3 (2004), 3-4; 351 - 354.