IWCE-12 Proceedings (2007)

• Z. Aksamija, U. Ravaioli:
  "Boltzman Transport Simulation of Single-Walled Carbon Nanotubes";
  Journal of Computational Electronics, 7 (2008), 3; 315 - 318.
  
  
• G. Albareda, J. Sune, X. Oriols:
  "Monte Carlo Simulations of Nanometric Devices beyond the Mean Field Approximation";
  Journal of Computational Electronics, 7 (2008), 3; 197 - 200.
  
  
• M. Aldegunde, A. Garcia-Loureiro, A. Martinez, K. Kalna:
  "Tetrahedral Elements in Self-Consistent Parallel 3D Monte Carlo Simulations of MOSFETs";
  Journal of Computational Electronics, 7 (2008), 3; 201 - 204.
  
  
• C. Alexander, A. Asenov:
  "Surface Roughness Induced Device Variability: 3D Ab-Initio Monte Carlo Simulation Study";
  Journal of Computational Electronics, 7 (2008), 3; 107 - 110.
  
  
• M. Auf der Maur, M. Povolotskyi, F. Sacconi, A. Pecchia, A. Di Carlo:
  "Multiscale Simulation of MOS Systems Based on High-κ Oxides";
  Journal of Computational Electronics, 7 (2008), 3; 398 - 402.
  
  
• J. Ayubi-Moak, R. Akis, D.K. Ferry, S.M. Goodnick, N. Faralli, M. Saraniti:
  "Towards the Global Modeling of InGaAs-Based Pseudomorphic HEMTs";
  Journal of Computational Electronics, 7 (2008), 3; 187 - 191.
  
  
• A. R. Brown, A. Asenov:
  "Capacitance Fluctuations in Bulk MOSFETs due to Random Discrete Dopants";
  Journal of Computational Electronics, 7 (2008), 3; 115 - 118.
  
  
• C. Buran, M.G. Pala, M. Bescond, M. Mouis:
  "Full Three-Dimensional Quantum Approach to Evaluate the Surface Roughness Limited Magnetoresistance Mobility in SNWT";
  Journal of Computational Electronics, 7 (2008), 3; 328 - 331.
  
  
• F. Buscemi, P. Bordone, A. Bertoni:
  "Effects of Scattering Resonances on Carrier-Carrier Entaglement in Charged Quantum Dots";
  Journal of Computational Electronics, 7 (2008), 3; 263 - 267.
  
  
• C. Cheng, J.-H. Lee, H.Z. Massoud, Q.H. Liu:
  "3D Self-Consistent Schrödinger-Poisson Solver: The Spectral Element Method";
  Journal of Computational Electronics, 7 (2008), 3; 337 - 341.
  
  
• Y. Cheng, I.M. Gamba, A. Majorana, C.-W. Shu:
  "Discontinuous Galerkin Solver for Boltzmann-Poisson Transients";
  Journal of Computational Electronics, 7 (2008), 3; 119 - 123.
  
  
• G. Csaba, P. Lugli, M. Becherer, D. Schmitt-Landsiedel, W. Porod:
  "Field-Coupled Computing in Magnetic Multilayers";
  Journal of Computational Electronics, 7 (2008), 3; 454 - 457.
  
  
• R.L. de Orio, H. Ceric, S. Selberherr:
  "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
  Journal of Computational Electronics, 7 (2008), 3; 128 - 131.
  
  
• T.D. Drysdale, A. R. Brown, G. Roy, S. Roy, A. Asenov:
  "Capacitance Variability of Short Range Interconnects";
  Journal of Computational Electronics, 7 (2008), 3; 124 - 127.
  
  
• I. Ercan, N.G. Anderson:
  "Current and Information in the Microcanonical Picture of Nanoscale Transport";
  Journal of Computational Electronics, 7 (2008), 3; 466 - 470.
  
  
• D.K. Ferry, R. Akis, R. Brunner, R. Meisels, F. Kuchar, J.P. Bird:
  "Transport in Open Quantum Systems: Comparing Classical and Quantum Phase Space Dynamics";
  Journal of Computational Electronics, 7 (2008), 3; 259 - 262.
  
  
• F. Gamiz, A. Godoy, C. Sampedro, N. Rodriguez, F.G Ruiz:
  "Monte Carlo Simulation of Low-Field Mobility in Strained Double-Gate SOI Transistors";
  Journal of Computational Electronics, 7 (2008), 3; 205 - 208.
  
  
• X. Gao, D. Botez, I. Knezevic:
  "Confined Phonon Scattering in Multivalley Monte Carlo Simulation of Quantum Cascade Lasers";
  Journal of Computational Electronics, 7 (2008), 3; 200 - 212.
  
  
• R. Golizadeh-Mojarad, A.N. Zainuddin, G. Klimeck, S. Datta:
  "Atomistic Non-Equilibrium Green´s Function Simulations of Graphene Nano-Ribbons in the Quantum Hall Regime";
  Journal of Computational Electronics, 7 (2008), 3; 407 - 410.
  
  
• F. Gomez-Campos, S. Rodriguez-Bolivar, J.E. Carceller:
  "A New Approach to Analyzing Anisotropic and Non-Parabolic Effects on Quantum Wires";
  Journal of Computational Electronics, 7 (2008), 3; 342 - 345.
  
  
• X. Guan, L. Yang, Z. Yu:
  "Monte Carlo Simulation of Electron Mobility in Strained Si DG-FETs with TB Bandstructure Calculation";
  Journal of Computational Electronics, 7 (2008), 3; 192 - 196.
  
  
• E.R. Hedin, Y.S. Joe, A.M. Satanin:
  "Sharpened Aharanov-Bohm Oscillations near Resonance in a Balanced Ring with Double Quantum Dots";
  Journal of Computational Electronics, 7 (2008), 3; 280 - 283.
  
  
• T. Inoue, Q. Jun, S. Liao, Y. Li, V. Narayanamurty, M. Vasudev, M. Dutta, M.A. Stroscio:
  "Comparison of Calculated and Measured I-V Curves for DNA";
  Journal of Computational Electronics, 7 (2008), 3; 256 - 258.
  
  
• C. Jirauschek, P. Lugli:
  "MC Simulation of Double-Resonant-Phonon Depopulation THz QCLs for High Operating Temperatures";
  Journal of Computational Electronics, 7 (2008), 3; 436 - 439.
  
  
• K. Kalna, A. Martinez, A. Svizhenko, M.P. Anantram, J.R. Barker, A. Asenov:
  "NEGF Simulation of the Effect of Strain on Scaled Double-Gate Nano-MOSFETs";
  Journal of Computational Electronics, 7 (2008), 3; 288 - 292.
  
  
• R.W. Keyes:
  "Component Variability as a Limit in Digital Electronics";
  Journal of Computational Electronics, 7 (2008), 3; 449 - 453.
  
  
• H. Khan, D. Mamaluy, D. Vasileska:
  "Can Silicon FinFETs Satisfy ITRS Projections for High Performance 10nm Devices?";
  Journal of Computational Electronics, 7 (2008), 3; 284 - 287.
  
  
• H. Khan, D. Mamaluy, D. Vasileska:
  "Fully 3D Self-Consistent Quantum Transport Simulation of Double-Gate and Tri-Gate 10nm FinFETs";
  Journal of Computational Electronics, 7 (2008), 3; 346 - 349.
  
  
• N. Kharche, M. Luisier, T.B. Boykin, G. Klimeck:
  "Electronic Structure and Transmission Characteristics of SiGe Nanowires";
  Journal of Computational Electronics, 7 (2008), 3; 350 - 354.
  
  
• H.-G. Kim, T. Won:
  "Numerical Simulation on Novel FinFETs: Asymmetric Poly-Silicon Gate FinFETs and TiN Gate FinFETs";
  Journal of Computational Electronics, 7 (2008), 3; 132 - 137.
  
  
• Y.-K. Kim, B.-G. Cho, S.-Y. Park, T. Won:
  "First Principle Study of Stress Effects on Indium Diffusion in Uniaxially and Biaxially Strained Silicon";
  Journal of Computational Electronics, 7 (2008), 3; 411 - 414.
  
  
• I. Knezevic:
  "Contact-Induced Decoherence in Nanodevices";
  Journal of Computational Electronics, 7 (2008), 3; 276 - 279.
  
  
• R. Kotlyar, C. Weber, S. Cea, M.D. Giles, M. Stettler:
  "Effect of Band Warping and Wafer Orientation on NMOS Mobility under Arbitrary Applied Stress";
  Journal of Computational Electronics, 7 (2008), 3; 95 - 98.
  
  
• T. Kubis, C. Yeh, P. Vogl:
  "Non-Equilibrium Quantum Transport Theory: Current and Gain in Quantum Cascade Lasers";
  Journal of Computational Electronics, 7 (2008), 3; 432 - 435.
  
  
• E. Lenzi, A. Gnudi, S. Reggiani, E. Gnani, M. Rudan, G. Baccarani:
  "Semiclassical Transport in Silicon Nanowire FETs Including Surface Roughness";
  Journal of Computational Electronics, 7 (2008), 3; 355 - 358.
  
  
• Y. Li, H.-Y. Chao, H.-Y. Lo:
  "High Field Emission Efficiency Surface Conduction Electron Emitters";
  Journal of Computational Electronics, 7 (2008), 3; 440 - 444.
  
  
• Y. Li, T.-C. Yeh:
  "Three-Dimensional Simulation of Field Emission Triode Structure Using Carbon-Nanotube Emitters";
  Journal of Computational Electronics, 7 (2008), 3; 332 - 336.
  
  
• Y. Li, S.-M. Yu, C.-H. Hwang, T.-C. Kuo:
  "Temperature Dependence on the Contact Size of GeSbTe Films for Phase Change Memories";
  Journal of Computational Electronics, 7 (2008), 3; 138 - 141.
  
  
• C. Liang, N. Neophytou, M.S. Lundstrom, D. Nikonov:
  "Computational Study of Double-Gate Graphene Nano-Ribbon Transistors";
  Journal of Computational Electronics, 7 (2008), 3; 394 - 397.
  
  
• S. Liao, M. Dutta, D. Schonfeld, T. Yamanaka, M.A. Stroscio:
  "Quantum Dot Blinking: Relevance to Physical Limits for Nanoscale Optoelectronic Device";
  Journal of Computational Electronics, 7 (2008), 3; 462 - 465.
  
  
• H. Lopez, X. Cartoixa, J. Sune, X. Oriols:
  "Boundary Conditions with Pauli Exclusion and Charge Neutrality: Application to the Monte Carlo Simulation of Ballistic Nanoscale Devices";
  Journal of Computational Electronics, 7 (2008), 3; 213 - 216.
  
  
• M. Luisier:
  "Full-Band Quantum Transport in Nanowire Transistors";
  Journal of Computational Electronics, 7 (2008), 3; 309 - 314.
  
  
• M. Macucci, P. Marconcini:
  "Effect of Magnetic Field on Shot Noise in Diffusive Conductors and Cascaded Barriers";
  Journal of Computational Electronics, 7 (2008), 3; 272 - 275.
  
  
• T.K. Maiti, S.S. Mahato, P. Chakraborty, C.K. Maiti, S.K. Sarkar:
  "CMOS Performance Enhancement in Hybrid Orientation Technologies";
  Journal of Computational Electronics, 7 (2008), 3; 181 - 186.
  
  
• P. Marconcini, G. Fiori, M. Macucci, G. Iannaccone:
  "Hierarchical Simulation of Transport in Silicon Nanowire Transistors";
  Journal of Computational Electronics, 7 (2008), 3; 415 - 418.
  
  
• T. Marcussen, A. Rurali, A.-P. Jauho, M. Brandbyge:
  "Transport in Silicon Nanowires: Role of Radial Dopant Profile";
  Journal of Computational Electronics, 7 (2008), 3; 324 - 327.
  
  
• I. Martin-Bragado, I. Avci, K. El Sayed, V. Koltyzhenkov, E. Lyumkis, M. Johnson:
  "Anisotropic Dopant Diffusion in Si under Stress Using both Continuum and Atomistic Methods";
  Journal of Computational Electronics, 7 (2008), 3; 103 - 106.
  
  
• A. Martinez, M. Bescond, A. R. Brown, J.R. Barker, A. Asenov:
  "A Full 3D Non-Equilibrium Green Functions Study of a Stray Charge in a Nanowire MOS Transistor";
  Journal of Computational Electronics, 7 (2008), 3; 359 - 362.
  
  
• H. Minari, N. Mori:
  "Atomistic Modeling of Hole Transport in Ultrathin Body SOI p-MOSFETs";
  Journal of Computational Electronics, 7 (2008), 3; 293 - 296.
  
  
• M. Mohamed, A. Godoy, U. Ravaioli:
  "3D Monte Carlo Simulation of Current Trends and Performance in Scaled Trigate MOSFET";
  Journal of Computational Electronics, 7 (2008), 3; 217 - 221.
  
  
• N. Mori, H. Takeda, H. Minari:
  "Effects of Phonon Scattering on Electron Transport in Double-Gate MOSFETs";
  Journal of Computational Electronics, 7 (2008), 3; 268 - 271.
  
  
• B. Muralidharan, H. Ryu, Z. Huang, G. Klimeck:
  "NEMO-3D Based Atomistic Simulation of a Double Quantum Dot Structure for Spin-Blockaded Transport";
  Journal of Computational Electronics, 7 (2008), 3; 403 - 406.
  
  
• O. Muscato, V. Di Stefano, C. Milazzo:
  "An Improved Hydrodynamic Model Describing Heat Generation and Transport in Submicron Silicon Devices";
  Journal of Computational Electronics, 7 (2008), 3; 142 - 145.
  
  
• M. Naumov, S. Lee, B. Haley, H. Bae, S. Clark, R. Rahman, H. Ryu, F. Saied, G. Klimeck:
  "Eigenvalue Solvers for Atomistic Simulations of Electronic Structures with NEMO-3D";
  Journal of Computational Electronics, 7 (2008), 3; 297 - 300.
  
  
• M. Nedjalkov, D. Vasileska:
  "Semi-Discrete 2D Wigner-Particle Approach";
  Journal of Computational Electronics, 7 (2008), 3; 222 - 225.
  
  
• N. Neophytou, A. Paul, M.S. Lundstrom, G. Klimeck:
  "Simulation of Nanowire Transistors: Atomistic versus Effective Mass Models";
  Journal of Computational Electronics, 7 (2008), 3; 363 - 366.
  
  
• K. Nikolic, J. Loizu, P. Degenaar, C. Toumazou:
  "Noise Reduction in Analogue Computation in Drosophila Photoreceptor";
  Journal of Computational Electronics, 7 (2008), 3; 458 - 461.
  
  
• L. Oniciuc, N. Haddad, P. Andrei:
  "Design of Random Doping Fluctuation Resistant Structures of Semiconductor Devices";
  Journal of Computational Electronics, 7 (2008), 3; 111 - 114.
  
  
• G. Ossig, F. Schürrer:
  "Simulation of Non-Equilibrium Electron Transport in Silicon Quantum Wires";
  Journal of Computational Electronics, 7 (2008), 3; 367 - 370.
  
  
• S.-Y. Park, Y.-K. Kim, T. Won:
  "Investigation of Boron Diffusion after Pre-Amorphization Implant with Kinetic Monte Carlo Approach";
  Journal of Computational Electronics, 7 (2008), 3; 419 - 422.
  
  
• A. Pecchia, G. Romano, A. Di Carlo, A. Gagliardi, T. Frauenheim:
  "Joule Heating in Molecular Tunnel Junctions: Application to C₆₀";
  Journal of Computational Electronics, 7 (2008), 3; 384 - 389.
  
  
• A.T. Pham, B. Meinerzhagen, C. Jungemann:
  "A Fast k·p Solver for Hole Inversion Layers with an Efficient 2D k·p-Space Discretization";
  Journal of Computational Electronics, 7 (2008), 3; 99 - 102.
  
  
• M. Pra, G. Csaba, C. Erlen, P. Lugli:
  "Simulation of ZnO Diodes for Application in Non-Volatile Crossbar Memories";
  Journal of Computational Electronics, 7 (2008), 3; 146 - 150.
  
  
• K. Raleva, D. Vasileska, S.M. Goodnick, T. Dzekov:
  "Modeling Thermal Effects in Nanodevices";
  Journal of Computational Electronics, 7 (2008), 3; 226 - 230.
  
  
• E. Ramayya, D. Vasileska, S.M. Goodnick, I. Knezevic:
  "Cross-Sectional Dependence of Electron Mobility and Lattice Thermal Conductivity in Silicon Nanowires";
  Journal of Computational Electronics, 7 (2008), 3; 319 - 323.
  
  
• H. Raza, E.C. Kan:
  "An Atomistic Quantum Transport Solver with Dephasing for Field-Effect Transistors";
  Journal of Computational Electronics, 7 (2008), 3; 423 - 426.
  
  
• H. Raza, E.C. Kan:
  "An Extended Hückel Theory Based Atomistic Model for Graphene Nanoelectronics";
  Journal of Computational Electronics, 7 (2008), 3; 372 - 375.
  
  
• C. Riddet, A. R. Brown, S. Roy, A. Asenov:
  "Boundary Conditions for Density Gradient Corrections in 3D Monte Carlo Simulations";
  Journal of Computational Electronics, 7 (2008), 3; 231 - 235.
  
  
• M. Rudan, R. Katilius, S. Reggiani, E. Gnani, G. Baccarani:
  "Impact Ionization Coefficient in Silicon at High Fields - A Parametric Approach";
  Journal of Computational Electronics, 7 (2008), 3; 151 - 154.
  
  
• F.G Ruiz, A. Goda, L. Donetti, I.M. Tienda-Luna, F. Gamiz, C. Sampedro:
  "Accurate Modeling of Metal/HfO₂/Si Capacitors";
  Journal of Computational Electronics, 7 (2008), 3; 155 - 158.
  
  
• S. Sato, N. Sano:
  "Consistency of Boundary Conditions in Non-Equilibrium Green's Function Simulations";
  Journal of Computational Electronics, 7 (2008), 3; 301 - 304.
  
  
• A. Seidl, T. Schnattinger, A. Erdmann, H. Hartmann, A. Petrashenko:
  "Accurate extraction of maximum current densities from the layout";
  Journal of Computational Electronics, 5 (2008), 4; 381 - 384.
  
  
• N. Seoane, A. Garcia-Loureiro, K. Kalna, A. Asenov:
  "Random Dopant Related Variability in the 30nm Gate Length In_0.75Ga_0.25As Implant-Free MOSFET";
  Journal of Computational Electronics, 7 (2008), 3; 159 - 163.
  
  
• R.S. Shishir, D.K. Ferry:
  "Calculation of Fin Width for Bulk Inversion in Si FinFETs by Applying Supersymmetry"";
  Journal of Computational Electronics, 7 (2008), 3; 305 - 308.
  
  
• A.F. Slachmuylders, B. Partoens, W. Magnus, F.M. Peeters:
  "The Effect of Dielectric Mismatch on Excitons and Trions in Cylindrical Semiconductor Nanowires";
  Journal of Computational Electronics, 7 (2008), 3; 376 - 379.
  
  
• B. Soree, W. Magnus, G. Pourtois:
  "Analytical and Self-Consistent Quantum Mechanical Model for a Surrounding Gate MOS Nanowire Operated in JFET Mode";
  Journal of Computational Electronics, 7 (2008), 3; 380 - 383.
  
  
• S. Souma, M. Ogawa, T. Yamamoto, K. Watanabe:
  "Numerical Simulation of Electronic Transport in Zigzag-Edged Graphene Nano-Ribbon Devices";
  Journal of Computational Electronics, 7 (2008), 3; 390 - 393.
  
  
• S. Sridharan, A. Venkatachalam, P.D. Yoder:
  "Electrothermal Analysis of AlGaN/GaN High Electron Mobility Transistors";
  Journal of Computational Electronics, 7 (2008), 3; 236 - 239.
  
  
• K. Sun, M. Dutta, M.A. Stroscio:
  "Transmission Coefficients for Minibands Formed in Quantum Dot Arrays under Bias";
  Journal of Computational Electronics, 7 (2008), 3; 445 - 448.
  
  
• V. Sverdlov, H. Kosina, S. Selberherr:
  "Electron Subband Dispersions in Ultrathin Silicon Films from a Two-Band k·p Theory";
  Journal of Computational Electronics, 7 (2008), 3; 164 - 167.
  
  
• T. Uechi, T. Fukui, N. Sano:
  "3D Monte Carlo Analysis of Potential Fluctuations under High Electron Concentrations";
  Journal of Computational Electronics, 7 (2008), 3; 240 - 243.
  
  
• M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
  "Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs";
  Journal of Computational Electronics, 7 (2008), 3; 168 - 171.
  
  
• F. Vitobello, N. Faralli, S. Yamakawa, S.M. Goodnick, M. Saraniti:
  "Full Band Monte Carlo Simulation of Dislocations Effects on 250nm AlGaN-GaN HEMT";
  Journal of Computational Electronics, 7 (2008), 3; 244 - 247.
  
  
• K. Xiu:
  "Simulation of Phonon-Limited Mobility for Nanoscale Si-Based n-Type Non-Planar Device under General Orientation and Stress Condition";
  Journal of Computational Electronics, 7 (2008), 3; 172 - 175.
  
  
• T. Yamanaka, M. Dutta, M.A. Stroscio:
  "Monte Carlo Simulation of Polaron Transport in DNA";
  Journal of Computational Electronics, 7 (2008), 3; 252 - 255.
  
  
• L. Yang, X. Guan, Z. Yu:
  "A Direct Solution Method for Carrier Transport Using Markov Process Representation";
  Journal of Computational Electronics, 7 (2008), 3; 248 - 251.
  
  
• D. Zhang, E. Polizzi:
  "Efficient Modeling Techniques for Atomistic-Based Electronic Density Calculation";
  Journal of Computational Electronics, 7 (2008), 3; 427 - 431.
  
  
• Y. Zhang, J. Kim, M.V. Fischetti:
  "Self-Consistent Calculation for Valence Subband Structure and Hole Mobility in p-Channel Inversion Layers";
  Journal of Computational Electronics, 7 (2008), 3; 176 - 180.