IWCE-13 Proceedings (2009)

• Z. Aksamija, M.Y. Mohamed, U. Ravaioli:
  "Parallel Implementation of Boltzmann Transport Simulation of Carbon Nanotubes";
  Talk: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• A. Ashok, D. Vasileska, S.M. Goodnick, O. Hartin:
  "Bias Induced Strain Effects, Short-Range Electron - Electron Interactions and Quantum Effects in AlGaN/GaN HEMTs";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• M. Auf der Maur, M. Povolotskyi, F. Sacconi, G. Romano, G. Penazzi, A. Pecchia, A. Di Carlo:
  "Multiscale-Multiphysics Simulation of Nanostructured Devices: the TiberCAD Project";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• J. Ayubi-Moak, R. Akis, M. Saraniti, D.K. Ferry, S.M. Goodnick:
  "Physical Modeling of Microwave Transistors Using a Full-Band/Full-Wave Simulation Approach";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
  "Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• M. Bescond, M. Lannoo, L. Raymond, F. Michelini, M.G. Pala:
  "Influence of Ionized Impurities in Silicon Nanowire MOS Transistors";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• C. Buran, M.G. Pala, M. Mouis, S. Poli:
  "Full-3D Real-Space Simulation of Surface-Roughness Effects in Double-Gate MOSFETs";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• Z. Chen, J. Zhang, Z. Yu:
  "AC Small-Signal Response of Graphene Nanoribbons";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• Y. Cheng, I.M. Gamba, A. Majorana, S. Chi-Wang:
  "A Discontinuous Galerkin Solver for Full-Band Boltzmann-Poisson Models";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• G.-S. Choe, J.-M. Woo, Y.-J. Park, Y.W. Chang, J. Oh, K.-H. Yoo:
  "Numerical Simulation of a DNA Sensor Based on the CNT-Gold Island Structure";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• N. Dehdashti, A. Afzalian, C.-W. Lee, R. Yan, G. Fagas, J.-P. Colinge:
  "Device Characteristics of Trigate-FET with Barrier Constrictions in the Channel";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• G. Fiori, G. Iannaccone:
  "Performance Analysis of Graphene Bilayer Transistors Through Tight-Binding Simulations";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• M.V. Fischetti, S. Jin, T.-W. Tang, P. Asbeck, Y. Taur, S.E. Laux, N. Sano:
  "Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• M. Frey, A. Esposito, A. Schenk:
  "Boundary Conditions for Incoherent Quantum Transport";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• B. Fu, M.V. Fischetti:
  "Dissipative Quantum Transport using the Pauli Master Equation";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• D. Fu, R. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards:
  "Strain- and Compositional Modulation of the Near-Band-Edge Band Structures of AlN and Its Ternary Alloys with GaN and InN";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• N. Fuentes, A. Parra, E. Oltra, J.M. Cuerva, S. Rodriguez-Bolivar, F. Gomez-Campos, J.A. Lopez-Villanueva, J.E. Carcellar, E. Bunuel, D.J. Cardenas:
  "Computational Study of a Nanofuse Based on Organic Molecules";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• A. Gagliardi, M. Auf der Maur, A. Pecchia, A. Di Carlo:
  "Dye Solar Cell Simulations Using Finite Element Method";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani:
  "Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• Y. He, J. Zhang, M. Zhang, Y. Wang, Z. Yu:
  "Chemical Bonding and Schottky Barrier for Metal-Carbon Nanotube Contacts";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• A. Heigl, A. Schenk, G. Wachutka:
  "Correction to the Schenk Model of Band-to-Band Tunneling in Silicon Applied to the Simulation of Nanowire Tunneling Transistors";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• C.-I. Huang, Y.-R. Wu, I.-C. Cheng, J.Z. Chen, K.-C. Chiu, T.-S. Lin:
  "Mobility Study of Polycrystalline MgZnO/ZnO Thin Film Layers with Monte Carlo Method";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• S. Ito, T. Maruizumi, Y. Suwa:
  "Stable Position of B12 Cluster Near Si (001) Surface and Its STM Images";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• S. Jin, T.-W. Tang, M.V. Fischetti:
  "Anatomy of Carrier Backscattering in Silicon Nanowire Transistors";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• J. Kim, M.V. Fischetti:
  "Empirical Pseudopotential Calculation of Band Structure and Deformation Potentials of Biaxially Strained Semiconductors";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• G. Klimeck, D. Vasileska:
  "ABACUS and AQME: Semiconductor Device and Quantum Mechanics Education on nanoHUB.org";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• K.J. Kuhn:
  "Moore's Law Past 32nm: Future Challenges in Device Scaling";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 6.
  
  
• O. Kurniawan, P. Bai, E.P. Li:
  "Non-Equilibrium Green's Function Calculation of Optical Absorption in Nano Optoelectronic Devices";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• K.-T. Lam, G. Liang:
  "Computational Study on the Performance Comparison of Monolayer and Bilayer Zigzag Graphene Nanoribbon FETs";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 3.
  
  
• S.E. Laux:
  "Computation of Complex Band Structures in Bulk and Confined Structures";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• S. Lee, H. Ryu, Z. Jiang, G. Klimeck:
  "Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• Z.-Y. Leong, K.-T. Lam, G. Liang:
  "Device Performance of Graphene Nanoribbon Field Effect Transistors with Edge Roughness Effects: A Computational Study";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• C. Li, M. Bescond, M. Lannoo:
  "Correlation Effects in Silicon Nanowire MOSFETs";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• C.-K. Li, Y.-R. Wu, J. Singh:
  "Modeling of Junction Temperature and Current Flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• M. Li, R. Zhang, W.S. Yan, B. Liu, F. Deyi, C.Z. Zhao, Z.L. Xie, X.Q. Xiu, Y.D. Zheng:
  "Effect of Doping Concentration and Barrier Thickness on Rashba Spin Splitting in Al0.5Ga0.5N/GaN Heterostructures";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• S. Li, E. Darve:
  "Optimization of the FIND Algorithm to Compute the Inverse of a Sparse Matrix";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• G. Liang, H. Teong, K.-T. Lam:
  "Computational Study of Graphene Nanoribbon Resonant Tunneling Diodes";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 3.
  
  
• T. Lu, G. Du, H. Jiang, X. Liu, P. Zhang:
  "Multi Subband Deterministic Simulation of an Ultra-thin Double Gate MOSFET with 2D Electron Gas";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• T.K. Maiti, C.K. Maiti:
  "Charge-based Mobility Modeling for Organic Semiconductors";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• P. Marconcini, G. Fiori, A. Ferretti, G. Iannaccone, M. Macucci:
  "Numerical Analysis of Transport Properties of Boron-Doped Graphene FETs";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• G. Milovanovic, H. Kosina:
  "Nonparabolicity Effects in Quantum Cascade Lasers";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• V. Mitin, A. Sergeev, L.-H. Chien, N. Vagidov:
  "Monte-Carlo Modeling of Photoelectron Kinetics in Quantum-Dot Photodetectors";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• N. Neophytou, H. Kosina, T. Rakshit:
  "Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 3.
  
  
• H.-N. Nguyen, D. Querlioz, S. Galdin-Retailleau, A. Bournel, P. Dollfus:
  "Wigner Monte Carlo Simulation of CNTFET: Comparison Between Semi-Classical and Quantum Transport";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• Y.M. Niquet, A. Lherbier, M.P. Persson, F. Triozon, S. Roche, X. Blase, D. Rideau:
  "Atomistic Tight-Binding Approaches to Quantum Transport";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• T. Osotchan, S. Pengmanayol:
  "Effect of Defect Sites in Charge Carrier Mobility Enhancement of Hopping Model";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• G. Patton:
  "Semiconductor Technology-Trends, Challenges and Opportunities";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• A. Paul, S. Mehrotra, G. Klimeck, M. Luisier:
  "On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• G. Penazzi, A. Pecchia, F. Sacconi, M. Auf der Maur, M. Povolotskyi, G. Romano, A. Di Carlo:
  "Simulations of Optical Properties of a GaN Quantum Dot Embedded in a AlGaN Nanocolumn within a Mixed FEM/atomistic Method";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• A.T. Pham, C. Jungemann, B. Meinerzhagen:
  "Simulation of Mobility Variation and Drift Velocity Enhancement Due to Uniaxial Stress Combined with Biaxial Strain in Si PMOS";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• J. Qian, S. Liao, M.A. Stroscio, M. Dutta, S. Xu:
  "Electrical Transport through Single DNA Molecules by Distinct Tip-Surface Configurations";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 3.
  
  
• D. Querlioz, J. Saint-Martin, P. Dollfus:
  "Decoherence Due to Electron-Phonon Scattering in Semiconductor Nanodevices";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• E. Ramayya, I. Knezevic:
  "Ultrascaled Silicon Nanowires as Efficient Thermoelectric Materials";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• Q. Ran, M. Gao, Y. Wang, Z. Yu:
  "First-Principles Study of the Potential Step in Metal/Graphene Contact";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• H. Raza, E.C. Kan:
  "Stacking Misalignments in Bilayer Graphene";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• N. Rizos, M. Omar, P. Lugli, G. Csaba, M. Becherer, D. Schmitt-Landsiedel:
  "Clocking Schemes for Field Coupled Devices from Magnetic Multilayers";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• R. Roloff, M. Wenin, W. Potz:
  "Optimization Algorithms for Josephson Qubits";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 2.
  
  
• H. Ryu, S. Lee, G. Klimeck:
  "A Study of Temperature-dependent Properties of N-type d-doped Si Band-structures in Equilibrium";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• A. Satou, V. Ryzhii, N. Vagidov, V. Mitin:
  "Numerical Simulation of Plasma Waves in High-Electron-Mobility Transistors Using Kinetic Transport Model";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 3.
  
  
• P. Schwaha, O. Baumgartner, R. Heinzl, M. Nedjalkov, S. Selberherr, I. Dimov:
  "Classical Approximation of the Scattering Induced Wigner Correction Equation";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• J.T. Shaw, H. Tuo-Hung, H. Raza, E.C. Kan:
  "3D Finite-Element Analysis of Metal Nanocrystal Memories Variations";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• Y. Sheng, Y.G. Xiao, Y.J. Zhou, M. Lestrade, Z.Q. Li, Z.M.S. Li:
  "Simulation on Crystalline Silicon Solar Cell with Laser-fired Contact (LFC)";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• M. Shin:
  "NEGF Simulation of Nanowire Field Effect Transistors Using the Eight-band k · p method";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• F. Shoushan:
  "CNT Research: from Academic Wonder to Industrial Exploration";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• I. Solovyev:
  "Realistic Modeling of Complex Oxide Materials from the First Principles";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• S. Souma, M. Ogawa, T. Yamamoto, K. Watanabe:
  "Simulation of Graphene Nanoribbon Spin-Filter Device with Spin-Density Functional Tight-Binding Method";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• S. Steiger, R. Veprek, B. Witzigmann:
  "Electroluminescence from a Quantum-Well LED using NEGF";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• M. Stettler, R. Kotlyar, T. Rakshit, T. Linton:
  "Device Simulation for Future Technologies";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, D. Esseni:
  "The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• I.M. Tienda-Luna, F.G Ruiz, A. Godoy, F. Gamiz:
  "Effect of Arbitrary Orientation and Strain on Surrounding Gate Transistors";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• F.J. Twaddle, D.R.S. Cumming, S. Roy, A. Asenov, T.D. Drysdale:
  "RC Variability of Short-Range Interconnects";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 3.
  
  
• S. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
  "Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• M. Usman, H. Ryu, S. Lee, Y.H. Tan, G. Klimeck:
  "Quantum Confined Stark Shift and Ground State Optical Transition Rate in [100] Laterally Biased InAs/GaAs Quantum Dots";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• A. Valentin, S. Galdin-Retailleau, P. Dollfus:
  "Sequential Transport in a Two-Dot Device";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• M. Van Schilfgaarde, T. Kotani:
  "Towards ab initio Device Design: The Quasiparticle Self-Consistent GW Approximation";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 2.
  
  
• D. Vasileska, S.M. Goodnick, K. Raleva:
  "Self-Consistent Simulation of Heating Effects in Nanoscale Devices";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• K.J. Willis, S.C. Hagness, I. Knezevic:
  "A Global EMC-FDTD Simulation Tool for High-Frequency Carrier Transport in Semiconductors";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• T. Windbacher, V. Sverdlov, S. Selberherr:
  "Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• H. Xu, Y. He, Y. Zhao, G. Du, J. Kang, R. Han, X. Liu, C. Fan:
  "Radial Boundary Forces-Modulated Valence Band Structure of Ge (110) Nanowire";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• M. Yu, Q. Li, J. Yang, Y. Qiao, J. Wang, R. Huang, X. Zhang:
  "Simulation on Low Energy Ion Implantation into Ge and SiGe With Molecular Dynamics Method";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• L. Zeng, X.-Y. Liu, G. Du, J.F. Kang, R.Q. Han:
  "A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• D. Zhang, E. Polizzi:
  "Mode Decomposition Techniques for Electronic Structure Calculations of 3D Nanowire Devices";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• J. Zhang, S. Patil:
  "Development of Coupled Thermo-Electrical-Mechanical Models for Studying Degradation of AlGaN/GaN HFETs";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• W. Zhang, G. Du, Q. Li, A. Zhang, Z. Mo, X. Liu, P. Zhang:
  "A 3D Parallel Monte Carlo Simulator for Semiconductor Devices";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.
  
  
• Y. Zhang, M.V. Fischetti:
  "Calculation of Hole Mobility in Ge and III-V p-Channels";
  Poster: Conference, Beijing, China; 2009-05-27 - 2009-05-29; in: "Proc. of IWCE", (2009), 1 - 4.