Proceedings

IWCE-17 Proceedings (2014)

A. Abdikarimov, G. Indalecio, E. Comesaña, A. Garcia-Loureiro, N. Seoane, K. Kalna, A.E. Atamuratov:
"Influence of Device Geometry on Electrical Characteristics of a 10.7 nm SOI-FinFET";
in: "Proc. of IWCE", IEEE, 2014, 226 - 229.
D.P. Adorno, P. Alaimo, N. Pizzolato, B. Spagnolo:
"Noise Features in InP Crystals Operating under Static, Periodic or Fluctuating Electric Fields";
in: "Proc. of IWCE", IEEE, 2014, 210 - 213.
D.P. Adorno, N. Pizzolato, C. Graceffa:
"Phonon-Induced Spin Relaxation of Conduction Electrons in Silicon Crystals";
in: "Proc. of IWCE", IEEE, 2014, 181 - 184.
M. Aldegunde, K. Kalna, S.P. Hepplestone, P.V. Sushko:
"Multi-Scale Simulations of Metal-Semiconductor Contacts for Nano-MOSFETs";
in: "Proc. of IWCE", IEEE, 2014, 91 - 94.
S.M. Amoroso, V. P. Georgiev, E. Towie, C. Riddet, A. Asenov:
"Metamorphosis of a Nano Wire: A 3-D Coupled Mode Space NEGF Study";
in: "Proc. of IWCE", IEEE, 2014, 151 - 154.
D. Areshkin, M. Luisier:
"System-Dependent Modified Becke-Johnson Exchange for Quantum Transport Simulations";
in: "Proc. of IWCE", IEEE, 2014, 107 - 109.
J.R. Barker, A. Martinez:
"Remote Soft-Optical Phonon Scattering in Si Nanowire FETs";
in: "Proc. of IWCE", IEEE, 2014, 143 - 145.
S. Berrada, V. H. Nguyen, P. Dollfus, Q. Wilmart, G. Feve, J.-M. Berroir, B. Placais:
"Graphene-Based Klein Tunneling Transistor";
in: "Proc. of IWCE", IEEE, 2014, 101 - 103.
S. Bruck, M. Calderara, M.H. Bani-Hashemian, J. Vande Vondele, M. Luisier:
"Towards Ab-Initio Simulations of Nanowire Field-Effect Transistors";
in: "Proc. of IWCE", IEEE, 2014, 76 - 78.
F. Buscemi, M. Rudan, E. Piccinini, R. Brunetti:
"A 5th-Order Method for 1D-Device Solution";
in: "Proc. of IWCE", IEEE, 2014, 135 - 138.
F. Carosella, C. Ndebeka-Bandou, R. Ferreira, G. Bastard, A. Wacker:
"Absorption in Disordered Heterostructures: Contributions from Intra- and Inter-Subband Scattering and Impact of Localised States";
in: "Proc. of IWCE", IEEE, 2014, 85 - 86.
P. Chang, X. Liu, L. Zeng, K. Wei, G. Du:
"An Adaptive Grid Algorithm for Self-Consistent k�p Schrodinger and Poisson Equations in UTB InSb-Based pMOSFETs";
in: "Proc. of IWCE", IEEE, 2014, 121 - 124.
E. Chen, X. Zhi-Ren, Z.R. Xiao, T. Shen, J. Wu, C.H. Diaz:
"Ab Initio Study of Dipole-Induced Threshold Voltage Shift in HfO₂/Al₂O₃/(100)Si";
in: "Proc. of IWCE", IEEE, 2014, 68 - 70.
M. Choi, M. Dutta, M.A. Stroscio:
"Numerial Analysis of Local Density of States of Plasmons in Si-SiO₂-Silver Nanocavity System";
in: "Proc. of IWCE", IEEE, 2014, 155 - 157.
M. Choi, N. Zhang, M. Dutta, M.A. Stroscio, C.O. Aspetti, R. Agarwal:
"Plasmon Excitation of Coherent Interface Phonons in Si-SiO₂ Systems";
in: "Proc. of IWCE", IEEE, 2014, 158 - 160.
M. Claus, A. Fediai, S. Mothes, J. Knoch, D. Ryndyk, S. Blawid, G. Cuniberti, M. Schroter:
"Towards a Multiscale Modeling Framework for Metal-CNT Interfaces";
in: "Proc. of IWCE", IEEE, 2014, 95 - 97.
M. Claus, D. Teich, S. Mothes, G. Seifert, M. Schroter:
"Impact of Functionalization Patterns on the Performance of CNTFETs";
in: "Proc. of IWCE", IEEE, 2014, 79 - 80.
E. Colomes, D. Marian, X. Oriols:
"Understandable Algorithm for Exchange Interaction: Quantum Noise in Nanoelectronic Devices";
in: "Proc. of IWCE", IEEE, 2014, 11 - 14.
G. Csaba, A. Papp, W. Porod:
"Holographic Algorithms for On-Chip, Non-Boolean Computing";
in: "Proc. of IWCE", IEEE, 2014, 22 - 23.
C. Dalle, F. Dessenne, J.-L. Thobel:
"2D Maxwell/Transport Time Domain Modeling of THz GaN Distributed Transferred Electron Device";
in: "Proc. of IWCE", IEEE, 2014, 173 - 176.
P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Efficient Calculation of the Two-Dimensional Wigner Potential";
in: "Proc. of IWCE", IEEE, 2014, 15 - 17.
P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Implications of the Coherence Length on the Discrete Wigner Potential";
in: "Proc. of IWCE", IEEE, 2014, 146 - 148.
J. Fang, W. Vandenberghe, M.V. Fischetti:
"Full-Band Ballistic Quantum Transport in Nanostructures using Empirical Pseudopotentials";
in: "Proc. of IWCE", IEEE, 2014, 125 - 127.
L. Filipovic, O. Baumgartner, Z. Stanojevic, H. Kosina:
"Band-to-Band Tunneling in 3D Devices";
in: "Proc. of IWCE", IEEE, 2014, 7 - 10.
M.V. Fischetti, S.J. Aboud:
"Reduction of the Normal-Superfluid Transition Temperature in Gated Bilayer Graphene";
in: "Proc. of IWCE", IEEE, 2014, 30 - 32.
K. Fukuda, T. Mori, W. Mizubayashi, Y. Morita, A. Tanabe, M. Masahara, T. Yasuda, S. Migita, H. Ota:
"Predictivity of the Non-Local BTBT Model for Structure Dependencies of Tunnel FETs";
in: "Proc. of IWCE", IEEE, 2014, 206 - 209.
A. Gagliardi, M. Auf der Maur, F. Di Fonzo, A. Abrusci, H. Snaith, G. Divitini, C. Ducati, A. Di Carlo:
"Multiscale Simulation of Solid State Dye Sensitized Solar Cells Including Morphology Effects";
in: "Proc. of IWCE", IEEE, 2014, 18 - 21.
I.M. Gamba:
"Alternative Computational Methods for Boltzmann and Wigner Models in Charged Transport Systems";
in: "Proc. of IWCE", IEEE, 2014, 36 - 39.
A. Garcia-Rivera, E. Comesaña, A. Garcia-Loureiro, R. Valin, A. Martinez:
"Influence of Textured Interfaces in the Performance of a-Si:H Double-Junction Solar Cell";
in: "Proc. of IWCE", IEEE, 2014, 170 - 172.
B. Gaury, J. Weston, C. Groth, X. Waintal:
"Classical and Quantum Spreading of a Charge Pulse";
in: "Proc. of IWCE", IEEE, 2014, 1 - 4.
J. Ghosh, V. Sverdlov, S. Selberherr:
"Spin Diffusion and the Role of Screening Effects in Semiconductors";
in: "Proc. of IWCE", IEEE, 2014, 58 - 61.
V. Gruzinskis, E. Starikov, P. Shiktorov, H. Marinchio, J. Torres, C. Palermo, L. Varani:
"Gunn Effect in n-InP MOSFET at Positive Gate Bias and Impact Ionization Conditions";
in: "Proc. of IWCE", IEEE, 2014, 204 - 205.
K. Haughan, M. T. Niemier, W. Porod, G. Csaba:
"Cellular Automata Designs for out of Plane Nanomagnet Logic";
in: "Proc. of IWCE", IEEE, 2014, 234 - 237.
E.R. Hedin, Y.S. Joe:
"Serially-Connected Aharonov-Bohm Rings with Embedded Quantum Dots";
in: "Proc. of IWCE", IEEE, 2014, 110 - 113.
S. Karishy, J. Ajaka, C. Palermo, L. Varani:
"Vertical Diodes Response to Optical and Electrical THz Excitations";
in: "Proc. of IWCE", IEEE, 2014, 165 - 167.
Y. Lan, N. Zhang, J.L. Shi, M. Dutta, M.A. Stroscio:
"Enhanced Signal-to-Noise in Photodetectors due to Interface Phonon-Assisted Transitions";
in: "Proc. of IWCE", IEEE, 2014, 161 - 164.
J. Larroque, J. Saint-Martin, P. Dollfus:
"Phonon Transport in Silicon Nanowires using a Full-Band Monte Carlo Approach";
in: "Proc. of IWCE", IEEE, 2014, 185 - 186.
D. Logoteta, G. Fiori, G. Iannaccone:
"Optimization and Benchmarking of Graphene-Based Heterostructure FETs";
in: "Proc. of IWCE", IEEE, 2014, 98 - 100.
Z. Lun, S. Liu, K. Zhao, G. Du, Y. Wang, X. Liu:
"Two-Dimensional Self-Consistent Simulation on Program/Retention Operation of Charge Trapping Memory";
in: "Proc. of IWCE", IEEE, 2014, 81 - 84.
A. Mahi, A. Belghachi, H. Marinchio, C. Palermo, L. Varani:
"Simulation of Plasma Oscillation Response to THz Radiation applied upon high Electron Mobility Transistors";
in: "Proc. of IWCE", IEEE, 2014, 168 - 169.
S. Malakooti, Y.S. Joe, E.R. Hedin:
"The Effects of Molecular Elongation on Defective DNA Electronics";
in: "Proc. of IWCE", IEEE, 2014, 242 - 245.
D. Mamaluy, X. Gao, B. Tierney:
"How much Time does FET Scaling have left?";
in: "Proc. of IWCE", IEEE, 2014, 220 - 221.
P. Marconcini, M. Macucci:
"Simplified Evaluation of the Electrostatic Effect of Gate Voltages on a Graphene Layer";
in: "Proc. of IWCE", IEEE, 2014, 33 - 35.
P. Marconcini, M. Macucci:
"Transport Analysis of Graphene-Based Devices with Width Discontinuities";
in: "Proc. of IWCE", IEEE, 2014, 187 - 190.
D. Marian, N. Zanghi, X. Oriols:
"On the Back-Action of THz Measurement on the Total Current of Quantum Devices";
in: "Proc. of IWCE", IEEE, 2014, 117 - 120.
G. Mascali, V. Romano:
"A Comprehensive Hydrodynamical Model for Charge Transport in Graphene";
in: "Proc. of IWCE", IEEE, 2014, 191 - 194.
J. Morales Escalante, I.M. Gamba:
"Boundary Conditions Effects by Discontinuous Galerkin Solvers for Boltzmann-Poisson Models of Electron Transport";
in: "Proc. of IWCE", IEEE, 2014, 214 - 217.
D. Nagy, M.A. Elmessary, M. Aldegunde, J. Lindberg, W. Dettmer, D. Peric, A. Loureiro, K. Kalna:
"3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulations of Nanoscale FinFETs";
in: "Proc. of IWCE", IEEE, 2014, 48 - 51.
H. Nakamura, T. Miyazaki, K. Nishio, H. Shmia, H. Akinaga, Y. Asai:
"Design of ReRAM Cell Structure by Metal Buffer and Contact Engineering via First-Principles Transport Calculations";
in: "Proc. of IWCE", IEEE, 2014, 71 - 73.
M.C. Nguyen, V. H. Nguyen, P. Dollfus, H.V. Nguyen:
"Conduction Gap of Strained/Unstrained Graphene Junctions: Direction Dependence";
in: "Proc. of IWCE", IEEE, 2014, 199 - 201.
Y.M. Niquet, V. H. Nguyen, F. Triozon, I. Duchemin, J. Li, O. Nier, D. Rideau:
"Modeling of FDSOI and Trigate Devices: What can we learn from Non-Equilibrium Green's Functions ?";
in: "Proc. of IWCE", IEEE, 2014, 52 - 53.
D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in Strained Thin Silicon Films";
in: "Proc. of IWCE", IEEE, 2014, 54 - 57.
M.G. Pala, A. Cresti:
"Quantum Simulation of Self-Heating Effects in Rough Si Nanowire FETs";
in: "Proc. of IWCE", IEEE, 2014, 65 - 67.
Y.V. Pershin, M. Di Ventra:
"Memcomputing: A Computing Paradigm to Store and Process Information on the Same Physical Platform";
in: "Proc. of IWCE", IEEE, 2014, 5 - 6.
K. Raleva, E. Bury, B. Kaczer, D. Vasileska:
"Uncovering the Temperature of the Hotspot in Nanoscale Devices";
in: "Proc. of IWCE", IEEE, 2014, 104 - 106.
R. Rhyner, M. Luisier:
"Influence of Anharmonic Phonon Decay on Self-Heating in Si Nanowire Transistors";
in: "Proc. of IWCE", IEEE, 2014, 62 - 64.
R. Rosati, R.C. Iotti, F. Rossi:
"Microscopic Modeling of Quantum Devices at High Carrier Densities via Lindblad-Type Scattering Superoperators";
in: "Proc. of IWCE", IEEE, 2014, 132 - 134.
R. Rosati, F. Rossi:
"Phonon-Induced Quantum Diffusion in Semiconductors";
in: "Proc. of IWCE", IEEE, 2014, 128 - 131.
F. Sacconi, M. Auf der Maur, A. Di Carlo, A. Pecchia:
"Atomistic Simulation of Random Alloy Fluctuations in InGaN/GaN Nanowires";
in: "Proc. of IWCE", IEEE, 2014, 87 - 90.
N. Shrestha, Y.-C. Lin, H.-T. Chang, Y. Li, E.Y. Chang:
"Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility Transistor";
in: "Proc. of IWCE", IEEE, 2014, 222 - 225.
Z. Stanojevic, L. Filipovic, O. Baumgartner, H. Kosina:
"Fast Methods for Full-Band Mobility Calculation";
in: "Proc. of IWCE", IEEE, 2014, 44 - 47.
P.-H. Su, Y. Li:
"Design Optimization of 16-nm Bulk FinFET Technology via Geometric Programming";
in: "Proc. of IWCE", IEEE, 2014, 230 - 233.
V. Talbo, J. Mateos, S. Retailleau, P. Dollfus, T. Gonzales:
"Frequency-Dependent Shot Noise in Single-Electron Devices";
in: "Proc. of IWCE", IEEE, 2014, 114 - 116.
J.-L. Thobel, F. Dessenne, C. Dalle:
"Monte Carlo Study of Low and High-Field Electron Transport in GaN-Based Heterostructures";
in: "Proc. of IWCE", IEEE, 2014, 40 - 43.
R. Valin, M. Aldegunde, A. Martinez, J.R. Barker:
"Impact of Lateral Doping Profiles on Ultra-Scaled Trigate FinFETs";
in: "Proc. of IWCE", IEEE, 2014, 218 - 219.
M. Van de Put, M. Thewissen, W. Magnus, B. Soree, J. Sellier:
"Spectral Force Approach to Solve the Time-Dependent Wigner-Liouville Equation";
in: "Proc. of IWCE", IEEE, 2014, 149 - 150.
T. Van-Truong, J. Saint-Martin, P. Dollfus:
"Modulation of Bandgap and Current in Graphene/BN Heterostructures by Tuning the Transverse Electric Field";
in: "Proc. of IWCE", IEEE, 2014, 202 - 203.
W.G. Vandenberghe, M.V. Fischetti:
"Calculation of Electron-Phonon Interaction Strength from First Principles in Graphene and Silicon";
in: "Proc. of IWCE", IEEE, 2014, 74 - 75.
B.G. Vasallo, J.F. Millithaler, I. Iniguez-de-la-Torre, T. Gonzalez, J. Mateos:
"Time-Domain Monte Carlo Simulation of GaN Planar Gunn Nanodiodes in Resonant Circuits";
in: "Proc. of IWCE", IEEE, 2014, 26 - 29.
A.F. Vincent, W.S. Zhao, J.-O. Klein, S. Galdin-Retailleau, D. Querlioz:
"Monte-Carlo Simulations of Magnetic Tunnel Junctions: From Physics to Application";
in: "Proc. of IWCE", IEEE, 2014, 24 - 25.
T. Windbacher, D. Osintsev, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
in: "Proc. of IWCE", IEEE, 2014, 177 - 180.
K. Xu, X. Meshik, M. Choi, M. Dutta, M. Stroscio, T.-C. Wu, M. Rahman, M. Norton:
"Study of Electric Field Caused by Semiconductor Quantum Dots in Close Proximity to DNA Origami";
in: "Proc. of IWCE", IEEE, 2014, 238 - 241.
S. Yaro, X. Oriols:
"Electron Injection Model for Graphene";
in: "Proc. of IWCE", IEEE, 2014, 195 - 198.
Z. Zhan, F.L. Traversa, X. Oriols:
"The Shortest Simulation-Box for Time-Dependent Computation of Wave Packets in Open System";
in: "Proc. of IWCE", IEEE, 2014, 139 - 142.