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IWCE-5 Journal Contributions (1997)

Publication list

 

Publication list for
Publications in Scientific Journals
(all records with "VLSI" anywhere in the record)
1998 - 1998

92 records


Publications in Scientific Journals

  1. R. Akis, D.K. Ferry:
    "Wave Function Scarring Effects in Open Ballistic Quantum Cavities";
    VLSI Design, 8 (1998), 307 - 312.
  2. L. Albasha, C.M. Snowden, R.D. Pollard:
    "A New HEMT Breakdown Model Incorporating Gate and Thermal Effects";
    VLSI Design, 8 (1998), 349 - 353.
  3. A.M. Anile, V. Romano, G. Russo:
    "Hyperbolic Hydrodynamical Model of Carrier Transport in Semiconductors";
    VLSI Design, 8 (1998), 521 - 525.
  4. C.R. Arokianathan, J.H. Davies, A. Asenov:
    "Ab-Initio Coulomb Scattering in Atomistic Device Simulation";
    VLSI Design, 8 (1998), 331 - 335.
  5. A. Asenov, S. Babiker, S.P. Beaumont, J.R. Barker:
    "Monte Carlo Calibrated Drift-Diffusion Simulation of Short Channel HFETs";
    VLSI Design, 8 (1998), 319 - 323.
  6. S. Babiker, A. Asenov, N. Cameron, S.P. Beaumont, J.R. Barker:
    "Complete RF Analysis of Compound FETs Based on Transient Monte Carlo Simulation";
    VLSI Design, 8 (1998), 313 - 317.
  7. K. Banoo, F. Assad, M.S. Lundstrom:
    "Formulation of the Boltzmann Equation as a Multi-Mode Drift-Diffusion Equation";
    VLSI Design, 8 (1998), 539 - 544.
  8. S. Bennett, C.M. Snowden, S. Iezekiel:
    "Rate Equation Modeling of Nonlinear Dynamics in Directly Modulated Multiple Quantum Well Laser Diodes";
    VLSI Design, 8 (1998), 355 - 360.
  9. E.J. Brauer, M. Turowski, J.M. McDonough:
    "Additive Decomposition Applied to the Semiconductor Drift-Diffusion Model";
    VLSI Design, 8 (1998), 393 - 399.
  10. A. R. Brown, A. Asenov, J.R. Barker:
    "3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs";
    VLSI Design, 8 (1998), 99 - 103.
  11. J.D. Bude:
    "Monte Carlo Simulations of Impact Ionization Feedback in MOSFET Structures";
    VLSI Design, 8 (1998), 13 - 19.
  12. F.M. Bufler, P. Graf, B. Meinerzhagen:
    "High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band versus Analytic Band Models";
    VLSI Design, 8 (1998), 41 - 45.
  13. F.A. Buot:
    "An lnterband Tunnel Oscillator: Intrinsic Bistability and Hysteresis of Trapped Hole Charge in a Double-Barrier Structure";
    VLSI Design, 8 (1998), 237 - 245.
  14. F.A. Buot:
    "Quantum Distribution-Function Transport Equations in Non-Normal Systems and in Ultra-Fast Dynamics of Optically-Excited Semiconductors";
    VLSI Design, 8 (1998), 265 - 273.
  15. C. Cercignani, I.M. Gamba, J.W. Jerome, C.-W. Shu:
    "Applicability of the High Field Model: A Preliminary Numerical Study";
    VLSI Design, 8 (1998), 275 - 282.
  16. C. Cercignani, I.M. Gamba, J.W. Jerome, C.-W. Shu:
    "Applicability of the High Field Model: An Analytical Study Via Asymptotic Parameters Defining Domain Decomposition";
    VLSI Design, 8 (1998), 135 - 141.
  17. C.-H. Chang, C.-K. Lin, N. Goldsman, I.D. Mayergoyz:
    "Spherical Harmonic Modeling of a 0.05μm Base BJT: A Comparison with Monte Carlo and Asymptotic Analysis";
    VLSI Design, 8 (1998), 147 - 151.
  18. E.A.B Cole, T. Boettcher, C.M. Snowden:
    "Two-Dimensional Modeling of HEMTs Using Multigrids with Quantum Correction";
    VLSI Design, 8 (1998), 29 - 34.
  19. M. Dür, S.M. Goodnick, M. Reigrotzki, R. Redmer:
    "Monte Carlo Simulations of High Field Transport in Electroluminescent Devices";
    VLSI Design, 8 (1998), 401 - 405.
  20. B. Eisenberg:
    "Ionic Channels in Biological Membranes: Natural Nanotubes Described by the Drift-Diffusion Equations";
    VLSI Design, 8 (1998), 75 - 78.
  21. T. Ezaki, N. Mori, C. Hamaguchi:
    "Electron-LA Phonon Interaction in a Quantum Dot";
    VLSI Design, 8 (1998), 225 - 230.
  22. P. Falsaperla, M. Trovato:
    "A Hydrodynamic Model for Transport in Semiconductors without Free Parameters";
    VLSI Design, 8 (1998), 527 - 532.
  23. G. Fang, T.-W. Tang:
    "Simulation of Bistable Laser Diodes with lnhomogeneous Excitation";
    VLSI Design, 8 (1998), 283 - 287.
  24. D.K. Ferry, J.R. Barker:
    "Open Problems in Quantum Simulation in Ultra-Submicron Devices";
    VLSI Design, 8 (1998), 165 - 172.
  25. M.V. Fischetti:
    "Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation";
    VLSI Design, 8 (1998), 173 - 178.
  26. F. Gamiz, J.B. Roldan, J.A. Lopez-Villanueva:
    "A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization";
    VLSI Design, 8 (1998), 257 - 260.
  27. F. Gamiz, J.B. Roldan, J.A. Lopez-Villanueva:
    "Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 - xGex Heterostructures";
    VLSI Design, 8 (1998), 253 - 256.
  28. C.L. Gardner, C. Ringhofer:
    "Smooth Quantum Hydrodynamic Model Simulation of the Resonant Tunneling Diode";
    VLSI Design, 8 (1998), 143 - 146.
  29. A. Greiner, L. Varani, L. Reggiani, M.C. Vecchi, T. Kuhn, P. Golinelli:
    "Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation";
    VLSI Design, 8 (1998), 59 - 64.
  30. H.L. Grubin, J.R. Caspar, D.K. Ferry:
    "Phase Space Boundary Conditions and Quantum Device Transport";
    VLSI Design, 8 (1998), 215 - 217.
  31. P. Hasler, A.G. Andreou, C. Diorio, B.A. Minch, C.A. Mead:
    "Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport";
    VLSI Design, 8 (1998), 454 - 461.
  32. P. Hyldgaard, H.K. Harbury, W. Porod:
    "Electrostatic Formation of Coupled Si/SiO2 Quantum Dot Systems";
    VLSI Design, 8 (1998), 555 - 558.
  33. G. Iannaccone, M. Macucci, B. Pellegrini:
    "Modeling of Shot Noise in Resonant Tunneling Structures";
    VLSI Design, 8 (1998), 449 - 453.
  34. S.M. Imtiaz, S.M. El-Ghazaly, R.O. Grondin:
    "Advantages of Semiconductor Device Simulator Combining Electromagnetic and Electron Transport Models";
    VLSI Design, 8 (1998), 495 - 500.
  35. C. Jacoboni, A. Abramo, P. Bordone, R. Brunetti, M. Pascoli:
    "Application of the Wigner-Function Formulation to Mesoscopic Systems in Presence of Electron-Phonon Interaction";
    VLSI Design, 8 (1998), 185 - 190.
  36. J. Jakumeit, A. Duncan, U. Ravaioli, K. Hess:
    "Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method";
    VLSI Design, 8 (1998), 343 - 347.
  37. Z.-L. Ji, D.W.L. Sprung:
    "Electron Transport In One-Dimensional Magnetic Superlattices";
    VLSI Design, 8 (1998), 559 - 565.
  38. Y.S. Joe, R.M. Cosby:
    "Resonances in Conductance through Tunable Attractors";
    VLSI Design, 8 (1998), 295 - 299.
  39. E.C. Kan, R.W. Dutton:
    "Modeling of Poly-Silicon Carrier Transport with Explicit Treatment of Grains and Grain Boundaries";
    VLSI Design, 8 (1998), 533 - 537.
  40. R.W. Kelsall:
    "Monte Carlo Simulations of Intersubband Hole Relaxation in a GaAs/AlAs Quantum Well";
    VLSI Design, 8 (1998), 367 - 373.
  41. R.W. Kelsall, A.J. Lidsey:
    "Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations";
    VLSI Design, 8 (1998), 21 - 27.
  42. M. Kemp, V. Mujica, A. Roitberg, M.A. Ratner:
    "Molecular Wire Interconnects: Chemical Structural Control, Resonant Tunneling and Length Dependence";
    VLSI Design, 8 (1998), 65 - 74.
  43. B. Klein, L.F. Register, K. Hess, D. Deppe:
    "Theory and Modeling of Lasing Modes in Vertical Cavity Surface Emitting Lasers";
    VLSI Design, 8 (1998), 87 - 91.
  44. G. Klimeck, D. Blanks, R. Lake, R.C. Bowen, C.L. Fernando, M. Leng, W.R. Frensley, D. Jovanovic, P. Sotirelis:
    "Writing Research Software in a Large Group for the NEMO Project";
    VLSI Design, 8 (1998), 79 - 86.
  45. V.A. Kochelap, B.A. Glavin, V.V. Mitin:
    "Transverse Patterns in the Bistable Resonant Tunneling Systems under Ballistic Lateral Transport";
    VLSI Design, 8 (1998), 481 - 487.
  46. H. Kosina, C. Troger:
    "SPIN - A Schrödinger-Poisson Solver Including Non-Parabolic Bands";
    VLSI Design, 8 (1998), 489 - 493.
  47. P.G. Krause, R.M. Mueller, P.D. Tougaw, J.M. Weidner:
    "An Alternative Geometry for Quantum Cellular Automata";
    VLSI Design, 8 (1998), 549 - 553.
  48. A. Kuprat, D. Cartwright, J.T. Gammel, D. George, B. Kendrick, D. Kilcrease, H. Trease, R. Walker:
    "X3D Moving Grid Methods for Semiconductor Applications";
    VLSI Design, 8 (1998), 117 - 121.
  49. G.-C. Liang, Y.A. Lin, D. Z.-Y. Ting, Y.-C. Chang:
    "Multiband Quantum Transmitting Boundary Method for Non-Orthogonal Basis";
    VLSI Design, 8 (1998), 507 - 513.
  50. I.-S. Lim, R.O. Grondin, S.M. El-Ghazaly:
    "Ensemble Monte Carlo and Full-Wave Electrodynamic Models Implemented Self-Consistently on a Parallel Processor Using Perfectly Matched Layer Boundary Conditions";
    VLSI Design, 8 (1998), 129 - 133.
  51. J.-F. Lin, D. Z.-Y. Ting:
    "Quantum Transport and Thermoelectric Properties of InAs/GaSb Superlattices";
    VLSI Design, 8 (1998), 501 - 505.
  52. M. Macucci, A.T. Galick, U. Ravaioli:
    "Tunneling between Multimode Stacked Quantum Wires";
    VLSI Design, 8 (1998), 247 - 252.
  53. M. Macucci, K. Hess:
    "Shell-Filling Effects in Circular Quantum Dots";
    VLSI Design, 8 (1998), 443 - 447.
  54. G. Mahler, R. Wawer:
    "Quantum Networks: Dynamics of Open Nanostructures";
    VLSI Design, 8 (1998), 191 - 196.
  55. A. Marrocco, P. Montarnal:
    "Bi-Dimensional Simulation of the Simplified Hydrodynamic and Energy-Transport Models Heter Junction Semiconductors Devices Using Mixed Finite Elements";
    VLSI Design, 8 (1998), 375 - 379.
  56. O. Muscato, S. Rinaudo, P. Falsaperla:
    "Calibration of a One Dimensional Hydrodynamic Simulator with Monte Carlo Data";
    VLSI Design, 8 (1998), 515 - 520.
  57. A. Nakano, R.K. Kalia, P. Vashishta:
    "Multilevel Algorithms for Large-Scope Molecular Dynamics Simulations of Nanostructures on Parallel Computers";
    VLSI Design, 8 (1998), 123 - 128.
  58. B. Neinhüs, S. Decker, P. Graf, F.M. Bufler, B. Meinerzhagen:
    "Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times";
    VLSI Design, 8 (1998), 387 - 391.
  59. M.S. Obrecht, E.L. Heasell, J. Vlach, M.I. Elmasry:
    "Transient Phenomena in High Speed Bipolar Devices";
    VLSI Design, 8 (1998), 475 - 480.
  60. T. Okada, K. Horio:
    "Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation";
    VLSI Design, 8 (1998), 437 - 442.
  61. F. Oyafuso, P. von Allmen, M. Grupen, K. Hess:
    "Inclusion of Bandstructure and Many-Body Effects in a Quantum Well Laser Simulator";
    VLSI Design, 8 (1998), 463 - 468.
  62. J.W. Parks Jr., K.F. Brennan:
    "Boundary Condition for the Modeling of Open-Circuited Devices in Non-Equilibrium";
    VLSI Design, 8 (1998), 567 - 572.
  63. J.W. Parks Jr., K.F. Brennan, A.W. Smith:
    "Numerical Examination of Photon Recycling as an Explanation of Observed Carrier Lifetime in Direct Bandgap Materials";
    VLSI Design, 8 (1998), 153 - 157.
  64. M.B. Patil, U. Ravaioli, T. Kerkhoven:
    "Numerical Evaluation of Iterative Schemes for Drift-Diffusion Simulation";
    VLSI Design, 8 (1998), 337 - 341.
  65. M. Peskin, C. Maziar:
    "MOMENTS: The Modular Monte Carlo Environment for Charge Transport Simulation, Overview and Applications";
    VLSI Design, 8 (1998), 35 - 40.
  66. A.J. Piazza, C.E. Korman:
    "Semiconductor Device Noise Computation Based on the Deterministic Solution of the Poisson and Boltzmann Transport Equations";
    VLSI Design, 8 (1998), 381 - 385.
  67. W. Pötz, X. Hu:
    "Coherent Control of Light Absorption and Carrier Dynamics in Semiconductor Nanostructures";
    VLSI Design, 8 (1998), 203 - 207.
  68. W. Porod:
    "Guest Editorial";
    VLSI Design, 8 (1998), xiii - xiii.
  69. S. Ramey, R. Khoie:
    "Formulation of a Self-Consistent Model for Quantum Well pin Solar Cells: Dark Behavior";
    VLSI Design, 8 (1998), 419 - 422.
  70. A. Reale, A. Di Carlo, S. Pescetelli, M. Paciotti, P. Lugli:
    "Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self-Consistent Tight-Binding Calculations";
    VLSI Design, 8 (1998), 469 - 473.
  71. S. Reggiani, M.C. Vecchi, M. Rudan:
    "Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE";
    VLSI Design, 8 (1998), 361 - 365.
  72. K.A. Remley, A. Weisshaar, V.K. Tripathi, S.M. Goodnick:
    "Modeling of Radiation Fields in a Sub-Picosecond Photo-Conducting System";
    VLSI Design, 8 (1998), 407 - 412.
  73. D.A. Richie, P. von Allmen, K. Hess, R.M. Martin:
    "Electronic Structure Calculations Using an Adaptive Wavelet Basis";
    VLSI Design, 8 (1998), 159 - 163.
  74. J.B. Roldan, F. Gamiz, J.A. Lopez-Villanueva:
    "Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs";
    VLSI Design, 8 (1998), 261 - 264.
  75. F. Rossi, S. Ragazzi, A. Di Carlo, P. Lugli:
    "A Generalized Monte Carlo Approach for the Analysis of Quantum-Transport Phenomena in Mesoscopic Systems: Interplay Between Coherence and Relaxation";
    VLSI Design, 8 (1998), 197 - 202.
  76. S. Roy, A. Asenov, S. Babiker, J.R. Barker, S.P. Beaumont:
    "RF Performance of Si/SiGe MODFETs: A Simulation Study";
    VLSI Design, 8 (1998), 325 - 330.
  77. M. Saraniti, G. Zandler, G. Formicone, S. Goodnick:
    "Cellular Automata Studies of Vertical Silicon Devices";
    VLSI Design, 8 (1998), 111 - 115.
  78. A. Scholze, A. Wettstein, A. Schenk, W. Fichtner:
    "Self-Consistent Calculations of the Ground State and the Capacitance of a 3D Si/SiO2 Quantum Dot";
    VLSI Design, 8 (1998), 231 - 235.
  79. W.-K. Shih, S. Jallepalli, M. Rashed, C.M. Maziar, A.F. Tasch Jr.:
    "Study of Electron Velocity Overshoot in n-MOS Inversion Layers";
    VLSI Design, 8 (1998), 429 - 435.
  80. C.M. Snowden:
    "Modeling of Thermal Effects in Semiconductor Structures";
    VLSI Design, 8 (1998), 53 - 58.
  81. J.P. Stanley, N. Goldsman:
    "New "Irreducible Wedge" for Scattering Rate Calculations in Full-Zone Monte Carlo Simulations";
    VLSI Design, 8 (1998), 413 - 417.
  82. J.P. Sun, H.B. Teng, G.I. Haddad, M.A. Stroscio, G.J. Iafrate:
    "lntersubband Relaxation in Step Quantum Well Structures";
    VLSI Design, 8 (1998), 289 - 293.
  83. S.-I. Takagi:
    "Two-Dimensional Carrier Transport in Si MOSFETs";
    VLSI Design, 8 (1998), 1 - 11.
  84. D. Z.-Y. Ting, E.S. Daniel, T.C. McGill:
    "Interface Roughness Effects in Ultra-Thin Tunneling Oxides";
    VLSI Design, 8 (1998), 47 - 51.
  85. A. Trellakis, A.T. Galick, A. Pacelli, U. Ravaioli:
    "Comparison of Iteration Schemes for the Solution of the Multidimensional Schrödinger-Poisson Equations";
    VLSI Design, 8 (1998), 105 - 109.
  86. D. Vasileska, W.J. Gross, V. Kafedziski, D.K. Ferry:
    "Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs";
    VLSI Design, 8 (1998), 301 - 305.
  87. G. Veszely:
    "A 3D Nonlinear Poisson Solver";
    VLSI Design, 8 (1998), 545 - 548.
  88. M. Wagner:
    "A New Computational Approach to Photon-Assisted Tunneling in Intense Driving Fields Based on a Fabry-Perot Analogy";
    VLSI Design, 8 (1998), 209 - 214.
  89. H. Wang, W.-K. Shih, S. Green, S. Hareland, C.M. Maziar, A.F. Tasch Jr.:
    "Hydrodynamic (HD) Simulation of n-Channel MOSFETs with a Computationally Efficient Inversion Layer Quantization Model";
    VLSI Design, 8 (1998), 423 - 428.
  90. C. Wasshuber, H. Kosina, S. Selberherr:
    "Single-Electron Memories";
    VLSI Design, 8 (1998), 219 - 223.
  91. G. Zandler, R. Oberhuber, D. Liebig, P. Vogl, M. Saraniti, P. Lugli:
    "Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes";
    VLSI Design, 8 (1998), 93 - 98.
  92. I.V. Zozoulenko, K.-F. Berggren:
    "Quantum Transport in Open Nanostructures";
    VLSI Design, 8 (1998), 179 - 184.