IWCE-8 Proceedings (2001)

• R. Akis, D.K. Ferry, J.P. Bird:
  "Eigenstate Selection in Open Quantum Dot Systems: On the True Nature of Level Broadening";
  Journal of Computational Electronics, 1 (2002), 1-2; 9 - 15.
  
  
• M.G. Ancona:
  "Finite-Difference Schemes for the Density-Gradient Equations";
  Journal of Computational Electronics, 1 (2002), 3; 435 - 443.
  
  
• M.G. Ancona, D. Yergeau, Z. Yu, B.A. Biegel:
  "On Ohmic Boundary Conditions for Density-Gradient Theory";
  Journal of Computational Electronics, 1 (2002), 1-2; 103 - 107.
  
  
• J.R. Barker:
  "On the Completeness of Quantum Hydrodynamics: Vortex Formation and the Need for Both Vector and Scalar Quantum Potentials in Device Simulation";
  Journal of Computational Electronics, 1 (2002), 1-2; 17 - 21.
  
  
• J.R. Barker:
  "On the Current and Density Representation of Many-Body Quantum Transport Theory";
  Journal of Computational Electronics, 1 (2002), 1-2; 23 - 26.
  
  
• L. Bonci, M. Gattobigio, M. Macucci:
  "Monte-Carlo Simulation of Clocked and Non-Clocked QCA Architectures";
  Journal of Computational Electronics, 1 (2002), 1-2; 49 - 53.
  
  
• P. Bordone, C. Jacoboni:
  "Wigner Paths for Quantum Transport";
  Journal of Computational Electronics, 1 (2002), 1-2; 67 - 73.
  
  
• A. R. Brown, J.R. Watling, A. Asenov:
  "A 3D Atomistic Study of Archetypal Double-Gate MOSFET Structures";
  Journal of Computational Electronics, 1 (2002), 1-2; 165 - 169.
  
  
• F.M. Bufler, W. Fichtner:
  "Hole Transport in Orthorhombically Strained Silicon";
  Journal of Computational Electronics, 1 (2002), 1-2; 175 - 177.
  
  
• J.A. Carrillo, I.M. Gamba, A. Majorana, C.-W. Shu:
  "A WENO-Solver for the 1D Non-Stationary Boltzmann-Poisson System for Semiconductor Devices";
  Journal of Computational Electronics, 1 (2002), 3; 365 - 370.
  
  
• X. Cartoixa, D. Z.-Y. Ting, T.C. McGill:
  "Theoretical Investigations of Spin Splittings and Optimization of the Rashba Coefficient in Asymmetric AlSb/InAs/GaSb Heterostructures";
  Journal of Computational Electronics, 1 (2002), 1-2; 141 - 146.
  
  
• W. Chen, X. Zheng, L.F. Register, M. Stroscio:
  "Quantum Transport Simulation of Carrier Capture and Transport within Tunnel Injection Lasers";
  Journal of Computational Electronics, 1 (2002), 1-2; 123 - 127.
  
  
• Y. Chen, D. Li, G. Wang, L. Lin, S. Oak, G. Shrivastav, A. Tasch, S.K. Banerjee:
  "Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas";
  Journal of Computational Electronics, 1 (2002), 1-2; 241 - 245.
  
  
• G. Csaba, W. Porod:
  "Simulation of Field Coupled Computing Architectures Based on Magnetic Dot Arrays";
  Journal of Computational Electronics, 1 (2002), 1-2; 87 - 91.
  
  
• M. Dequesnes, S.V. Rotkin, N. Aluru:
  "Parameterization of Continuum Theories for Single-Wall Carbon Nanotube Switches by Molecular Dynamics Simulations";
  Journal of Computational Electronics, 1 (2002), 3; 313 - 316.
  
  
• A. Di Carlo, M. Gheorghe, A. Bolognesi, P. Lugli, M. Sternberg, G. Seifert, T. Frauenheim:
  "Molecular Devices Simulations Based on Density Functional Tight-Binding";
  Journal of Computational Electronics, 1 (2002), 1-2; 109 - 112.
  
  
• B. Eisenberg:
  "Ionic Channels as Natural Nanodevices";
  Journal of Computational Electronics, 1 (2002), 3; 331 - 333.
  
  
• D.K. Ferry, S. Ramey, L. Shifren, R. Akis:
  "The Effective Potential in Device Modeling: The Good, the Bad and the Ugly";
  Journal of Computational Electronics, 1 (2002), 1-2; 59 - 65.
  
  
• G. Fiori, G. Iannaccone, M. Macucci:
  "Modeling of Shallow Quantum Point Contacts Defined on AlGaAs/GaAs Heterostructures: The Effect of Surface States";
  Journal of Computational Electronics, 1 (2002), 1-2; 39 - 42.
  
  
• G. Formicone, M. Saraniti, D.K. Ferry:
  "On the Electron Transient Response in a 50nm MOSFET by Ensemble Monte Carlo Simulation in Presence of the Smoothed Potential Algorithm";
  Journal of Computational Electronics, 1 (2002), 1-2; 251 - 255.
  
  
• C.L. Gardner, J.W. Jerome, R.S. Eisenberg:
  "Electrodiffusion Model Simulation of Rectangular Current Pulses in a Biological Channel";
  Journal of Computational Electronics, 1 (2002), 3; 347 - 351.
  
  
• S. Gonzalez, D. Vasileska, A.A. Demkov:
  "Empirical Pseudopotential Method for the Band Structure Calculation of Strained-Silicon Germanium Materials";
  Journal of Computational Electronics, 1 (2002), 1-2; 179 - 183.
  
  
• H.L. Grubin, R.C. Buggeln:
  "RTD Relaxation Oscillations, the Time Dependent Wigner Equation and Phase Noise";
  Journal of Computational Electronics, 1 (2002), 1-2; 33 - 37.
  
  
• M. Gu, B. Parlett, D. Z.-Y. Ting, J. Xia:
  "Low-Rank Update Eigensolver for Supercell Band Structure Calculations";
  Journal of Computational Electronics, 1 (2002), 3; 411 - 414.
  
  
• B. Guo, U. Ravaioli:
  "Full Band Monte Carlo Simulation of Wurtzite AlGaN/GaN MODFETs";
  Journal of Computational Electronics, 1 (2002), 3; 309 - 311.
  
  
• J. Guo, Z. Ren, M. Lundstrom:
  "A Computational Exploration of Lateral Channel Engineering to Enhance MOSFET Performance";
  Journal of Computational Electronics, 1 (2002), 1-2; 185 - 189.
  
  
• F.O. Heinz, A. Schenk, A. Scholze, W. Fichtner:
  "Full Quantum Simulation of Silicon-on-Insulator Single-Electron Devices";
  Journal of Computational Electronics, 1 (2002), 1-2; 161 - 164.
  
  
• M.S. Hybertsen, B. Witzigmann, M.A. Alam, R.K. Smith:
  "Role of Carrier Capture in Microscopic Simulation of Multi-Quantum-Well Semiconductor Laser Diodes";
  Journal of Computational Electronics, 1 (2002), 1-2; 113 - 118.
  
  
• G. Iannaccone, M. Macucci:
  "Simulation of Transport and Noise Properties of SILCs through Thin-Oxide MOS Structures";
  Journal of Computational Electronics, 1 (2002), 3; 381 - 384.
  
  
• Z. Ikonic, P. Harrison, R.W. Kelsall:
  "Monte Carlo Simulations of Hole Dynamics in Si/SiGe Quantum Cascade Structures";
  Journal of Computational Electronics, 1 (2002), 1-2; 191 - 194.
  
  
• K. Kalna, A. Asenov:
  "Quantum Corrections in the Monte Carlo Simulations of Scaled PHEMTs with Multiple Delta Doping";
  Journal of Computational Electronics, 1 (2002), 1-2; 257 - 261.
  
  
• E.C. Kan, V. Narayanan, G. Pei:
  "Band-to-Band Tunneling by Monte Carlo Simulation for Prediction of MOSFET Gate-Induced Drain Leakage Current";
  Journal of Computational Electronics, 1 (2002), 1-2; 223 - 226.
  
  
• S. Kaya, A. Asenov, S. Roy:
  "On the Breakdown of Universal Mobility Curves: A Brownian 3D Simulation Framework";
  Journal of Computational Electronics, 1 (2002), 3; 375 - 379.
  
  
• A. Kepkep, U. Ravaioli:
  "3D Parallel Monte Carlo Simulation of Sub-0.1 Micron MOSFETs on a Cluster Based Supercomputer";
  Journal of Computational Electronics, 1 (2002), 1-2; 171 - 174.
  
  
• G. Klimeck:
  "Parallelization of the Nanoelectronic Modeling Tool (NEMO-1D) on a Beowulf Cluster";
  Journal of Computational Electronics, 1 (2002), 1-2; 75 - 79.
  
  
• I. Knezevic, D. Vasileska, X. He, D. Schroder, D.K. Ferry:
  "Low-Field Mobility and Quantum Effects in Asymmetric Silicon-Based Field-Effect Devices";
  Journal of Computational Electronics, 1 (2002), 1-2; 273 - 277.
  
  
• H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M.D. Giles:
  "An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
  Journal of Computational Electronics, 1 (2002), 3; 371 - 374.
  
  
• D. Li, G. Wang, Y. Chen, L. Lin, G. Shrivastav, S. Oak, A. Tasch, S.K. Banerjee:
  "A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures";
  Journal of Computational Electronics, 1 (2002), 3; 415 - 419.
  
  
• Y. Li, O. Voskoboynikov, C.P. Lee, S.M. Sze:
  "A Computational Technique for Electron Energy States Calculation in Nano-Scopic Three-Dimensional InAs/GaAs Semiconductor Quantum Rings Simulation";
  Journal of Computational Electronics, 1 (2002), 1-2; 227 - 230.
  
  
• Y. Liu, F. Oyafuso, W.-C. Ng, K. Hess:
  "Numerical Study of Minority Carrier Induced Diffusion Capacitance in VCSELs Using Minilase";
  Journal of Computational Electronics, 1 (2002), 1-2; 119 - 122.
  
  
• M. Macucci, G. Iannaccone, B. Pellegrini:
  "Numerical Investigation of Shot Noise between the Ballistic and the Diffusive Regime";
  Journal of Computational Electronics, 1 (2002), 1-2; 99 - 102.
  
  
• P. Matagne, T. Wilkens, J.P. Leburton, R. Martin:
  "Hybrid LSDA/Diffusion Quantum Monte-Carlo Method for Spin Sequences in Vertical Quantum Dots";
  Journal of Computational Electronics, 1 (2002), 1-2; 135 - 139.
  
  
• K. Matsuda:
  "Phonon Scattering Effects on Temperature Dependence of Conductivity in Strained Silicon";
  Journal of Computational Electronics, 1 (2002), 3; 425 - 429.
  
  
• W. McMahon, K. Hess:
  "A Multi-Carrier Model for Interface Trap Generation";
  Journal of Computational Electronics, 1 (2002), 3; 395 - 398.
  
  
• C. Millar, A. Asenov, S. Roy, J.M. Cooper:
  "Generic Particle-Mesh Framework for the Simulation of Ionic Channels";
  Journal of Computational Electronics, 1 (2002), 3; 405 - 409.
  
  
• C. Millar, A. Asenov, J.R. Watling:
  "Excessive Over-Relaxation Method for Multigrid Poisson Solvers";
  Journal of Computational Electronics, 1 (2002), 3; 341 - 345.
  
  
• M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
  "A Space Dependent Wigner Equation Including Phonon Interaction";
  Journal of Computational Electronics, 1 (2002), 1-2; 27 - 31.
  
  
• X. Oriols, F. Martin, J. Sune:
  "Study of Noise Properties in Nanoscale Electronic Devices Using Quantum Trajectories";
  Journal of Computational Electronics, 1 (2002), 1-2; 43 - 48.
  
  
• F. Oyafuso, G. Klimeck, R.C. Bowen, T.B. Boykin:
  "Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms";
  Journal of Computational Electronics, 1 (2002), 3; 317 - 321.
  
  
• A. Pecchia, R.W. Kelsall, B. Movaghar, A. Bourlange, S.D. Evans, B.J. Hickey, N. Boden:
  "Electronic Bandstructure and Transport Properties of Self-Organised Organic-Inorganic Heterostructures";
  Journal of Computational Electronics, 1 (2002), 3; 399 - 403.
  
  
• S. Picozzi, R. Asahi, C.B. Geller, A.J. Freeman:
  "Impact Ionization in GaAs within a Screened Exchange Density Functional Formalism";
  Journal of Computational Electronics, 1 (2002), 3; 421 - 424.
  
  
• N.J. Pilgrim, W. Batty, R.W. Kelsall:
  "Thermally Self-Consistent Monte Carlo Device Simulations";
  Journal of Computational Electronics, 1 (2002), 1-2; 263 - 266.
  
  
• S. Ramey, D.K. Ferry:
  "3D Monte Carlo Modeling of Thin SOI MOSFETs Including the Effective Potential and Random Dopant Distribution";
  Journal of Computational Electronics, 1 (2002), 1-2; 267 - 271.
  
  
• U. Ravaioli:
  "Editorial";
  Journal of Computational Electronics, 1 (2002), 1-2; 7.
  
  
• A. Reale, P. Lugli:
  "Modeling of Semiconductor Optical Amplifiers";
  Journal of Computational Electronics, 1 (2002), 1-2; 129 - 134.
  
  
• J.-H. Rhew, Z. Ren, M.S. Lundstrom:
  "Benchmarking Macroscopic Transport Models for Nanotransistor TCAD";
  Journal of Computational Electronics, 1 (2002), 3; 385 - 388.
  
  
• S.V. Rotkin, K. Hess:
  "Many-Body Terms in Van der Waals Cohesion Energy of Nanotubes";
  Journal of Computational Electronics, 1 (2002), 3; 323 - 326.
  
  
• M. Sabathil, S. Hackenbuchner, J.A. Majewski, G. Zandler, P. Vogl:
  "Towards Fully Quantum Mechanical 3D Device Simulations";
  Journal of Computational Electronics, 1 (2002), 1-2; 81 - 85.
  
  
• A. Sakai, A. Ishida, S. Uno, Y. Kamakura, M. Morifugi, K. Taniguchi:
  "Calculation of Direct Tunneling Current through Ultra-Thin Gate Oxides Using Complex Band Models for SiO₂";
  Journal of Computational Electronics, 1 (2002), 1-2; 195 - 199.
  
  
• M. Saraniti, J. Tang, S. Goodnick, S.J. Wigger:
  "Parallel Approaches for Particle-Based Simulation of Charge Transport in Semiconductors";
  Journal of Computational Electronics, 1 (2002), 1-2; 215 - 218.
  
  
• L. Shifren, D.K. Ferry:
  "A Wigner Function Based Ensemble Monte Carlo Approach for Accurate Incorporation of Quantum Effects in Device Simulation";
  Journal of Computational Electronics, 1 (2002), 1-2; 55 - 58.
  
  
• G. Shrivastav, D. Li, Y. Chen, G. Wang, L. Lin, S. Oak, A. Tasch, S.K. Banerjee:
  "An Analytical 1D Model for Ion Implantation of Any Species into Single-Crystal Silicon Based on Legendre Polynomials";
  Journal of Computational Electronics, 1 (2002), 1-2; 247 - 250.
  
  
• G. Speyer, D. Vasileska, S.M. Goodnick:
  "Efficient Poisson Solver for Semiconductor Device Modeling Using the Multi-Grid Preconditioned BiCGSTAB Method";
  Journal of Computational Electronics, 1 (2002), 3; 359 - 363.
  
  
• M. Städele, B. Tuttle, B. Fischer, K. Hess:
  "Tunneling through Thin Oxides-New Insights from Microscopic Calculations";
  Journal of Computational Electronics, 1 (2002), 1-2; 153 - 159.
  
  
• M. Stroscio, M. Dutta, D. Kahn, S. Komirenko, K.W. Kim:
  "Phonons in Wurtzites, Fullerenes, and Nanotubes";
  Journal of Computational Electronics, 1 (2002), 3; 327 - 330.
  
  
• H. Takeda, N. Mori, C. Hamaguchi:
  "Full-Band Monte Carlo Simulation of Two-Dimensional Electron Gas in SOI MOSFETs";
  Journal of Computational Electronics, 1 (2002), 1-2; 219 - 222.
  
  
• T.-W. Tang, X. Wang, Y. Li:
  "Discretization Scheme for the Density-Gradient Equation and Effect of Boundary Conditions";
  Journal of Computational Electronics, 1 (2002), 3; 389 - 393.
  
  
• D. Z.-Y. Ting, X. Cartoixa, T.C. McGill, D.L. Smith, J.N. Schulman:
  "Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures";
  Journal of Computational Electronics, 1 (2002), 1-2; 147 - 151.
  
  
• D. Z.-Y. Ting, M. Gu, X. Chi, J. Cao:
  "Numerical Acceleration of Three-Dimensional Quantum Transport Method Using a Seven-Diagonal Pre-Conditioner";
  Journal of Computational Electronics, 1 (2002), 1-2; 93 - 97.
  
  
• L. Tirino, M. Weber, K.F. Brennan, E. Bellotti, M. Goano, P.P. Ruden:
  "Fully Numerical Monte Carlo Simulator for Noncubic Symmetry Semiconductors";
  Journal of Computational Electronics, 1 (2002), 1-2; 231 - 234.
  
  
• H. Tsuchiya, U. Ravaioli:
  "A Particle Description Model for Quantum Tunneling Effects";
  Journal of Computational Electronics, 1 (2002), 1-2; 295 - 299.
  
  
• M.D. Ulrich, W.F. Seng, P.A. Barnes:
  "Solutions to the Fermi-Dirac Integrals in Semiconductor Physics Using Polylogarithms";
  Journal of Computational Electronics, 1 (2002), 3; 431 - 434.
  
  
• T.A. Van der Straaten, J. Tang, R.S. Eisenberg, U. Ravaioli, N. Aluru:
  "Three-Dimensional Continuum Simulations of Ion Transport through Biological Ion Channels: Effect of Charge Distribution in the Constriction Region of Porin";
  Journal of Computational Electronics, 1 (2002), 3; 335 - 340.
  
  
• X. Wang, T.-W. Tang:
  "Comparison of Three Quantum Correction Models for the Charge Density in MOS Inversion Layers";
  Journal of Computational Electronics, 1 (2002), 1-2; 283 - 287.
  
  
• J.R. Watling, J.R. Barker, S. Roy:
  "Quantum Potential Corrections for Spatially Dependent Effective Masses with Application to Charge Confinement at Heterostructure Interfaces";
  Journal of Computational Electronics, 1 (2002), 1-2; 279 - 282.
  
  
• J.R. Watling, A. R. Brown, A. Asenov:
  "Can the Density Gradient Approach Describe the Source-Drain Tunneling in Decanano Double-Gate MOSFETs?";
  Journal of Computational Electronics, 1 (2002), 1-2; 289 - 293.
  
  
• M. Weber, L. Tirino, K.F. Brennan, M. Farahmand:
  "Theoretical Study of RF Breakdown in GaN Wurtzite and Zincblende Phase MESFETs";
  Journal of Computational Electronics, 1 (2002), 1-2; 235 - 239.
  
  
• B. Winstead, H. Tsuchiya, U. Ravaioli:
  "Comparison of Quantum Corrections for Monte Carlo Simulation";
  Journal of Computational Electronics, 1 (2002), 1-2; 201 - 207.
  
  
• Y. Yang, D. Boda, D. Henderson, D. Busath:
  "Computer Simulation Studies of the Selectivity and Conductance of a Model Calcium Channel";
  Journal of Computational Electronics, 1 (2002), 3; 353 - 357.
  
  
• T.-H. Yu, K.F. Brennan:
  "Monte Carlo Based Calculation of the Electron Dynamics in a Two-Dimensional GaN/AlGaN Heterostructure in the Presence of Strain Polarization Fields";
  Journal of Computational Electronics, 1 (2002), 1-2; 209 - 214.