IWCE-9 Proceedings (2003)

• S. Aboud, M. Saraniti, R. Eisenberg:
  "Computational Issues in Modeling Ion Transport in Biological Channels: Self-Consistent Particle-Based Simulations";
  Journal of Computational Electronics, 2 (2003), 2-4; 239 - 243.
  
  
• S. Ahmed, C. Ringhofer, D. Vasileska:
  "An Effective Potential Approach to Modeling 25nm MOSFET Devices";
  Journal of Computational Electronics, 2 (2003), 2-4; 113 - 117.
  
  
• R. Akis, D.K. Ferry:
  "Kinetic Lattice Monte Carlo Simulations of Ad-Dimer Diffusion on the Silicon (100) Surface";
  Journal of Computational Electronics, 2 (2003), 2-4; 497 - 500.
  
  
• R. Akis, A. Ramamoorthy, D.K. Ferry, J.P. Bird:
  "Signatures of a Discrete Level Spectrum and Dynamical Tunneling in the Conductance of a Large Open Quantum Dot";
  Journal of Computational Electronics, 2 (2003), 2-4; 281 - 284.
  
  
• C. Alexander, J.R. Watling, A. Asenov:
  "Mobility Variations in Ultra Small Devices due to Random Discrete Dopants";
  Journal of Computational Electronics, 2 (2003), 2-4; 285 - 289.
  
  
• J. Ayubi-Moak, S.M. Goodnick, S.J. Aboud, M. Saraniti, S.M. El-Ghazaly:
  "Coupling Maxwell's Equations to Full Band Particle-Based Simulators";
  Journal of Computational Electronics, 2 (2003), 2-4; 183 - 190.
  
  
• J.R. Barker:
  "Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices";
  Journal of Computational Electronics, 2 (2003), 2-4; 153 - 161.
  
  
• A. Bertoni:
  "Simulation of Electron Decoherence Induced by Carrier-Carrier Scattering";
  Journal of Computational Electronics, 2 (2003), 2-4; 291 - 295.
  
  
• A. Bertoni, P. Bordone, G. Ferrari, N. Giacobbi, C. Jacoboni:
  "Proximity Effect of the Contacts on Electron Transport in Mesoscopic Devices";
  Journal of Computational Electronics, 2 (2003), 2-4; 137 - 140.
  
  
• A. Bolognesi, A. Di Carlo:
  "Influence of Carrier Mobility and Interface Trap States on the Transfer and Output Characteristics of Organic Thin Film Transistors";
  Journal of Computational Electronics, 2 (2003), 2-4; 297 - 300.
  
  
• L. Bonci, M. Macucci, D. Guan, U. Ravaioli:
  "Numerical Analysis of Tunneling between Stacked Quantum Wires with the Inclusion of the Effects from Effective Mass Discontinuities";
  Journal of Computational Electronics, 2 (2003), 2-4; 127 - 130.
  
  
• M. Borici, J.R. Watling, R.W. Wilkins, L. Yang, J.R. Barker:
  "A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs";
  Journal of Computational Electronics, 2 (2003), 2-4; 163 - 167.
  
  
• J. Branlard, S. Aboud, S. Goodnick, M. Saraniti:
  "Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations";
  Journal of Computational Electronics, 2 (2003), 2-4; 213 - 217.
  
  
• F.M. Bufler, A. Schenk, W. Fichtner:
  "Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of Scaled Double-Gate MOSFETs";
  Journal of Computational Electronics, 2 (2003), 2-4; 81 - 84.
  
  
• A. Caddemi, N. Donato, M.G. Xibilia:
  "Advanced Simulation of Semiconductor Devices by Artificial Neural Networks";
  Journal of Computational Electronics, 2 (2003), 2-4; 301 - 307.
  
  
• J.A. Carrillo, I.M. Gamba, A. Majorana, C.-W. Shu:
  "A Direct Solver for 2D Non-Stationary Boltzmann-Poisson Systems for Semiconductor Devices: A MESFET Simulation by WENO-Boltzmann Schemes";
  Journal of Computational Electronics, 2 (2003), 2-4; 375 - 380.
  
  
• E. Ciancio, R.C. Iotti, F. Rossi:
  "Gauge-Invariant Formulation of Fermi's Golden Rule and its Application to High-Field Transport in Semiconductors";
  Journal of Computational Electronics, 2 (2003), 2-4; 173 - 176.
  
  
• G. Csaba, W. Porod:
  "Restoration of Magnetization Distributions from Joint Magnetic Force Microscopy Measurements and Micromagnetic Simulations";
  Journal of Computational Electronics, 2 (2003), 2-4; 225 - 229.
  
  
• G. Curatola, G. Iannaccone:
  "Ballistic Transport in SiGe and Strained-Si MOSFETs";
  Journal of Computational Electronics, 2 (2003), 2-4; 309 - 312.
  
  
• L. Demeio:
  "Splitting-Scheme Solution of the Collisionless Wigner Equation with Non-Parabolic Band Profile";
  Journal of Computational Electronics, 2 (2003), 2-4; 313 - 316.
  
  
• C. Duffy, P. Hasler:
  "Modeling Hot-Electron Injection in pFETs";
  Journal of Computational Electronics, 2 (2003), 2-4; 317 - 322.
  
  
• B. Eisenberg:
  "Ion Channels as Devices";
  Journal of Computational Electronics, 2 (2003), 2-4; 245 - 249.
  
  
• T. Ezaki, P. Werner, M. Hane:
  "Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation";
  Journal of Computational Electronics, 2 (2003), 2-4; 97 - 103.
  
  
• G. Fiori, G. Iannaccone:
  ""Atomistic", Quantum and Ballistic Effects in Nanoscale MOSFETs";
  Journal of Computational Electronics, 2 (2003), 2-4; 123 - 126.
  
  
• M.V. Fischetti:
  "Scaling MOSFETs to the Limit: A Physicists's Perspective";
  Journal of Computational Electronics, 2 (2003), 2-4; 73 - 79.
  
  
• A. Garcia-Loureiro, K. Kalna, A. Asenov:
  "3D Parallel Simulations of Fluctuation Effects in pHEMTs";
  Journal of Computational Electronics, 2 (2003), 2-4; 369 - 373.
  
  
• A. Gehring, H. Kosina, S. Selberherr:
  "Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
  Journal of Computational Electronics, 2 (2003), 2-4; 219 - 223.
  
  
• M.J. Gilbert, R. Akis, D.K. Ferry:
  "Modeling Fully Depleted SOI MOSFETs in 3D Using Recursive Scattering Matrices";
  Journal of Computational Electronics, 2 (2003), 2-4; 329 - 334.
  
  
• A. Giorgio, A.G. Perri:
  "Design and Modeling of Photonic Band-Gap Resonance Cavity";
  Journal of Computational Electronics, 2 (2003), 2-4; 403 - 406.
  
  
• A. Giorgio, A.G. Perri:
  "Modeling Photonic Band-Gap Structures Having Multiple Defects";
  Journal of Computational Electronics, 2 (2003), 2-4; 397 - 401.
  
  
• D. Guan, A. Godoy, U. Ravaioli, F. Gamiz:
  "Comparison between Non-Equilibrium Green's Function and Monte Carlo Simulations for Transport in a Silicon Quantum Wire Structure";
  Journal of Computational Electronics, 2 (2003), 2-4; 335 - 339.
  
  
• C. Hamaguchi:
  "High Electron Mobility Limited by Remote Impurity Scattering";
  Journal of Computational Electronics, 2 (2003), 2-4; 169 - 171.
  
  
• Z. Ikonic, P. Harrison, R.W. Kelsall:
  "Simulation of Carrier Transport in p-Si/SiGe Quantum Cascade Emitters";
  Journal of Computational Electronics, 2 (2003), 2-4; 353 - 356.
  
  
• R.C. Iotti, F. Rossi:
  "Microscopic Modeling of Opto-Electronic Quantum Devices: A Predictive Simulation Tool";
  Journal of Computational Electronics, 2 (2003), 2-4; 191 - 195.
  
  
• K. Kalna, L. Yang, A. Asenov:
  "Simulation Study of High Performance III-V MOSFETs for Digital Applications";
  Journal of Computational Electronics, 2 (2003), 2-4; 341 - 345.
  
  
• G. Kathawala, M. Mohamed, U. Ravaioli:
  "Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation";
  Journal of Computational Electronics, 2 (2003), 2-4; 85 - 89.
  
  
• Y. Kazami, D. Kasai, Y. Mitani, K. Horio:
  "Simulation of Lag Phenomena and Pulsed I-V Curves of Compound Semiconductor FETs as Affected by Impact Ionization";
  Journal of Computational Electronics, 2 (2003), 2-4; 203 - 206.
  
  
• G. Klimeck:
  "Quantum and Semi-Classical Transport in NEMO 1D";
  Journal of Computational Electronics, 2 (2003), 2-4; 177 - 182.
  
  
• H. Kosina, M. Nedjalkov, S. Selberherr:
  "A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
  Journal of Computational Electronics, 2 (2003), 2-4; 147 - 151.
  
  
• S. Krishnan, D. Vasileska:
  "Self-Consistent Subband Structure and Mobility of Two-Dimensional Holes in Strained SiGe MOSFETs";
  Journal of Computational Electronics, 2 (2003), 2-4; 443 - 448.
  
  
• T. Kuhn, M. Glanemann, V.M. Axt:
  "Quantum Control of Capture Processes into Localized States of a Quantum Dot";
  Journal of Computational Electronics, 2 (2003), 2-4; 263 - 267.
  
  
• S.E. Laux, A. Kumar, M.V. Fischetti:
  "Does Circulation in Individual Current States Survive in the Total Current Density?";
  Journal of Computational Electronics, 2 (2003), 2-4; 105 - 108.
  
  
• G. Leuzzi, A. Mencattini, M. Salmeri:
  "Physics-Based Correction of Extracted Conductance Parameters of Nonlinear Microwave Semiconductor Devices";
  Journal of Computational Electronics, 2 (2003), 2-4; 357 - 362.
  
  
• Y. Li, H.-M. Lu:
  "Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings";
  Journal of Computational Electronics, 2 (2003), 2-4; 487 - 490.
  
  
• Y. Li, T.-W. Tang, S.-M. Yu:
  "A Quantum Correction Model for Nanoscale Double-Gate MOS Devices under Inversion Conditions";
  Journal of Computational Electronics, 2 (2003), 2-4; 491 - 495.
  
  
• P. Lugli, A. Di Carlo:
  "Editorial";
  Journal of Computational Electronics, 2 (2003), 2-4; 71 - 72.
  
  
• W. Ma, S. Kaya, A. Asenov:
  "Study of RF Linearity in Sub-50nm MOSFETs Using Simulations";
  Journal of Computational Electronics, 2 (2003), 2-4; 347 - 352.
  
  
• M. Manenti, F. Compagnone, A. Di Carlo, P. Lugli:
  "Monte Carlo Simulations of THz Quantum-Cascade Lasers";
  Journal of Computational Electronics, 2 (2003), 2-4; 433 - 437.
  
  
• A. Marchi, S. Reggiani, A. Bertoni, M. Rudan:
  "Two-Particle Eigenfunctions of Electrons Propagating in Two Parallel Quantum Wires";
  Journal of Computational Electronics, 2 (2003), 2-4; 381 - 385.
  
  
• P. Marconcini, M. Macucci:
  "Numerical Techniques for the Evaluation of Conductance and Noise in the Presence of a Perpendicular Magnetic Field";
  Journal of Computational Electronics, 2 (2003), 2-4; 387 - 391.
  
  
• C. Millar, A. Asenov, S. Roy:
  "Brownian Ionic Channel Simulation";
  Journal of Computational Electronics, 2 (2003), 2-4; 257 - 262.
  
  
• H. Nakatsuji, Y. Kamakura, K. Taniguchi:
  "Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs";
  Journal of Computational Electronics, 2 (2003), 2-4; 109 - 112.
  
  
• M.G. Pala, G. Iannaccone:
  "Modeling Decoherence Effects on the Transport Properties of Mesoscopic Devices";
  Journal of Computational Electronics, 2 (2003), 2-4; 393 - 396.
  
  
• A. Pecchia, M. Gheorghe, L. Latessa, A. Di Carlo:
  "Coherent Phonon Scattering in Molecular Devices";
  Journal of Computational Electronics, 2 (2003), 2-4; 251 - 256.
  
  
• S. Picozzi, R. Asahi, A.J. Freeman:
  "First Principles Calculations of Auger Recombination and Impact Ionization Rates in Semiconductors";
  Journal of Computational Electronics, 2 (2003), 2-4; 197 - 202.
  
  
• S. Picozzi, A. Pecchia, M. Gheorghe, A. Di Carlo, P. Lugli, B. Delley, M. Elstner:
  "Schottky Barrier Height at Organic/Metal Junctions from First-Principles";
  Journal of Computational Electronics, 2 (2003), 2-4; 407 - 411.
  
  
• N.J. Pilgrim, W. Batty, R.W. Kelsall:
  "Electrothermal Monte Carlo Simulations of InGaAs/AlGaAs HEMTs";
  Journal of Computational Electronics, 2 (2003), 2-4; 207 - 211.
  
  
• M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, S. Birner, P. Vogl:
  "Microscopic Description of Nanostructures Grown on (N11) Surfaces";
  Journal of Computational Electronics, 2 (2003), 2-4; 275 - 279.
  
  
• A. Reale, P. Lugli:
  "Modeling Nonlinear Propagation of Optical Signals in Semiconductor Optical Amplifiers";
  Journal of Computational Electronics, 2 (2003), 2-4; 413 - 416.
  
  
• M. Rosini, C. Jacoboni, S. Ossicini:
  "Semiclassical and Quantum Transport in Si/SiO₂ Superlattices";
  Journal of Computational Electronics, 2 (2003), 2-4; 417 - 422.
  
  
• G. Roy, A. R. Brown, A. Asenov, S. Roy:
  "Quantum Aspects of Resolving Discrete Charges in 'Atomistic' Device Simulations";
  Journal of Computational Electronics, 2 (2003), 2-4; 323 - 327.
  
  
• S. Roy, B. Cheng, G. Roy, A. Asenov:
  "A Methodology for Quantitatively Introducing 'Atomistic' Fluctuations into Compact Device Models for Circuit Analysis";
  Journal of Computational Electronics, 2 (2003), 2-4; 427 - 431.
  
  
• S. Roy, A. Lee, A. R. Brown, A. Asenov:
  "Applicability of Quasi-3D and 3D MOSFET Simulations in the 'Atomistic' Regime";
  Journal of Computational Electronics, 2 (2003), 2-4; 423 - 426.
  
  
• M. Sabathil, S. Birner, D. Mamaluy, P. Vogl:
  "Efficient Computational Method for Ballistic Currents and Application to Single Quantum Dots";
  Journal of Computational Electronics, 2 (2003), 2-4; 269 - 273.
  
  
• F. Sacconi, A. Di Carlo, P. Lugli, M. Städele:
  "Full-Band Tunneling Currents in Nanometer-Scale MOS Structures";
  Journal of Computational Electronics, 2 (2003), 2-4; 439 - 442.
  
  
• J. See, P. Dollfus, S. Galdin-Retailleau, P. Hesto:
  "Coulomb Blockade in Silicon Devices: Electronic Structure of Quantum Dots";
  Journal of Computational Electronics, 2 (2003), 2-3; 449 - 453.
  
  
• P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani, J.C. Vaissiere, S. Perez, T. Gonzales:
  "Monte Carlo Simulation of Electronic Noise in Semiconductor Materials and Devices Operating under Cyclostationary Conditions";
  Journal of Computational Electronics, 2 (2003), 2-4; 455 - 458.
  
  
• C. Simserides:
  "The Density of States and the Pertinent Electronic Properties of the Quasi 2DEG in Simple and DMS Structures Subjected to an In-Plane Magnetic Field";
  Journal of Computational Electronics, 2 (2003), 2-4; 459 - 463.
  
  
• E. Starikov, P. Shiktorov, V. Grunzinskis, L. Reggiani, L. Varani, J.C. Vaissiere:
  "Terahertz Generation from Dynamic Free-Carrier Superlattice in n⁺nn⁺ InN Structures";
  Journal of Computational Electronics, 2 (2003), 2-4; 465 - 468.
  
  
• H. Takeda, N. Mori, C. Hamaguchi:
  "Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs";
  Journal of Computational Electronics, 2 (2003), 2-4; 119 - 122.
  
  
• T.-W. Tang, B. Wu:
  "Quantum Corrected Monte Carlo Simulation of Semiconductor Devices Using the Effective Conduction-Band Edge Method";
  Journal of Computational Electronics, 2 (2003), 2-4; 131 - 135.
  
  
• A. Toscano, L. Vegni:
  "Advanced Electromagnetic Modelling of Multilayer Monolithic Microwave Integrated Circuit";
  Journal of Computational Electronics, 2 (2003), 2-4; 469 - 473.
  
  
• H. Tsuchiya, M. Horino, T. Miyoshi:
  "Quantum Monte Carlo Device Simulation of Nanoscaled SOI-MOSFETs";
  Journal of Computational Electronics, 2 (2003), 2-4; 91 - 95.
  
  
• T. Van der Straaten, G. Kathawala, U. Ravaioli:
  "BioMOCA: A Transport Monte Carlo Model for Ion Channels";
  Journal of Computational Electronics, 2 (2003), 2-4; 231 - 237.
  
  
• J.R. Watling, L. Yang, M. Borici, J.R. Barker, A. Asenov:
  "Degeneracy and High Doping Effects in Deep Submicron Relaxed and Strained Si n-MOSFETs";
  Journal of Computational Electronics, 2 (2003), 2-4; 475 - 479.
  
  
• S. Yamakawa, S. Aboud, M. Saraniti, S.M. Goodnick:
  "Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method";
  Journal of Computational Electronics, 2 (2003), 2-4; 481 - 485.
  
  
• L. Yang, J.R. Watling, M. Borici, R.W. Wilkins, A. Asenov, J.R. Barker, S. Roy:
  "Simulations of Scaled Sub-100nm Strained Si/SiGe p-Channel MOSFETs";
  Journal of Computational Electronics, 2 (2003), 2-4; 363 - 368.
  
  
• R.P. Zaccaria, R.C. Iotti, F. Rossi:
  "Microscopic Modelling of Quantum Open Systems: A Generalized Wigner-Function Approach";
  Journal of Computational Electronics, 2 (2003), 2-4; 141 - 145.