TECHNICAL PROGRAM
SESSION 1: TCAD 1

Chairperson: Asen Asenov

Monday, October 25, 8:15 a.m. - 10:15 a.m. Fowler Hall, Stewart Center All abstracts are PDFs and can be read with Adobe Acrobat Reader.
8:15 a.m.	Evolution of Current Transport Models for Engineering Applications A. Gehring and S. Selberherr (Invited Speaker) • abstract • presentation (available from the author via email to S. Selberherr) Institute for Microelectronics, TU Vienna, Gusshausstr
8:45 a.m.	A Legendre Polynomial Solver for the Langevin Boltzmann Equation C. Jungemann and B. Meinerzhagen • abstract • presentation (pdf) NST, TU Braunschweig
9:00 a.m.	Efficient Simulation of the Full Coulomb Interaction in Three Dimensions C. Heitzinger, C. Ringhofer, S. Ahmed, and D. Vasileska • abstract Arizona State University
9:15 a.m.	A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement B. Obradovic, P. Matagne, L. Shifren, X. Wang, M. Stettler, J. He, and M.D. Giles • abstract • presentation (pdf, pps) Intel TCAD and Intel PTD Q&R
9:30 a.m.	A Unified Modeling of NBTI and Hot Carrier Injection for MOSFET Reliability H. Kufluoglu and M.A. Alam • abstract Purdue University
9:45 a.m.	Simulations of Sub-100nm Strained Si MOSFETs with High-κ Gate Stacks L. Yang, J. R. Watling, F. Adam-Lema, A. Asenov, and J.R. Barker • abstract • presentation (pdf, pps) University of Glasgow
10:00 a.m.	Influence of Ballistic Effects in Ultra-Small MOSFETs J. Saint Martin, V. Aubry-Fortuna, A. .Bournel, P. Dollfus, S. Galdin, and C. Chassat • abstract • presentation (pdf, pps) Université Paris Sud
10:15 a.m.	Coffee Break