AUTHOR INDEX

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

* Designates first or primary author.

[A]
Abdallah, N.B.	P02-01*	Simulation Schemes in 2D Nanoscale MOSFET's: WKB Based Method
Aboud, S.	S03-04	Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AIGaN/GaN HEMTs
Aboud, S.	S08-07	Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs
Aboud, S.	S11-07	The Role of Long-Range Forces in Porin Channel Conduction
Aboud, S.	P01-20	Efficient Memory Management for Cellular Monte Carlo Algorithm
Aboud, S.	P01-29	Error Analysis of the Poisson P3M Force Field Scheme for Particle-Based Simulations of Biological Systems
Adam-Lema, F.	S01-06	Simulations of Sub-100nm Strained Si MOSFETs with High-κ Gate Stacks
Adam-Lema, F.	S02-06*	Intrinsic Parameter Fluctuations in Conventional MOSFET's at the Scaling Limit: A Statistical Study
Affinito, F.	S11-06*	A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches
Ahmed, S.	S01-03	Efficient Simulation of the Full Coulomb Interaction in Three Dimensions
Ahmed, S.	S03-06	A Self-Consistent Event Biasing Scheme for Statistical Enhancement
Ahmed, S.S.	P02-02*	Quantum Potential Approach to Modeling Nano-MOSFETs
Akis, R.	P02-24	Theoretical Evidence of Spontaneous Spin Polarization in GaAs/AlGaAs Split- Gate Heterostructures
Akturk, A.	S03-03	Phonon-Limited Transport in Carbon Nanotubes Using the Monte Carlo Method
Al-Ahmadi, A.	S10-07	Search for Optimum and Scalable COSMOS
Alam, K.	S06-04	Electronic Properties of Silicon Nanowires
Alam, M.D.	S01-05	A Unified Modeling of NBTI and Hot Carrier Injection for MOSFET Reliability
Alam, M.D.	P01-23	Monte-Carlo Simulation of Carbon Nanotube Devices
Alexander, C.	P01-25	Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study
Alexson, D.	P02-33	Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments
Aluru, N.R.	S11-01	Hierarchical Multiscale Computations of Ion Transport in Synthetic Nanopores
Anantram, M.P.	S05-06	Atomistic Simulation of Carbon Nanotube Field-Effect Transistors using Non-Equilibrium Green's Function Formalism
Anantram, M.P.	S08-05	Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation
Ancona, M.G.	S02-03*	Multi-Dimensional Tunneling in Density-Gradient Theory
Andrei, P.	P01-01*	Random Doping Fluctuations of Small-Signal Parameters in Nanoscale Semiconductor Devices
Asenov, A.	S01-06	Simulations of Sub-100nm Strained Si MOSFETs with High-κ Gate Stacks
Asenov, A.	S02-06	Intrinsic Parameter Fluctuations in Conventional MOSFET's at the Scaling Limit: A Statistical Study
Asenov, A.	P01-09	RTS Amplitudes in Decanano n-MOSFETS with Conventional and High-k Gate Stacks
Asenov, A.	P01-25	Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study
Asenov, A.	P01-30	Tracking the Propagation of Individual Ions through Ion Channels with Nano-MOSFETs
Ashizawa, Y.	S06-03	Analysis of Strained-Si Device Including Quantum Effect
Ashok, A.	P02-24*	Theoretical Evidence of Spontaneous Spin Polarization in GaAs/AlGaAs Split- Gate Heterostructures
Asokan, A.	P01-24*	Monte Carlo Simulations of Phonon Transport in Silicon
Aubry-Fortuna, V.	S01-07	Influence of Ballistic Effects in Ultra-Small MOSFETs
Autran, J.-L.	S06-05	Treatment of Point Defects in Nanowire MOSFETs using the Nonequilibrium Green's Function Formalism
[B]
Baccarani, G.	P02-10	On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs
Barker, J. R.	S01-06	Simulations of Sub-100nm Strained Si MOSFETs with High-κ Gate Stacks
Barker, J.	P01-19*	Smart-Dust: Monte Carlo Simulation of Self-Organised Transport
Barker, J.	P02-03*	Vortex Flows in Semiconductor Device Quantum Channels: Time-Dependent Simulation
Barker, J.	P02-29	Hilbert Graph: An Expandable Interconnection for Clusters
Barmpoutis, A.	P01-19	Smart-Dust: Monte Carlo Simulation of Self-Organised Transport
Bertoni, A.	P02-04	Simulation of Entanglement Dynamics for a Scattering between a Free and a Bound Carrier in a Quantum Wire
Bertoni, A.	P02-05	Wigner Function for Identical Particles
Bertoni, A.	P02-16	Single Electron Transport and Entanglement Induced by a Surface Acoustic Waves versus Free Ballistic Propagation in Coupled Quantum Wires
Bescond, M.	S06-05*	Treatment of Point Defects in Nanowire MOSFETs using the Nonequilibrium Green's Function Formalism
Bigiani, A.	S11-06	A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches
Bordone, P.	P02-04*	Simulation of Entanglement Dynamics for a Scattering between a Free and a Bound Carrier in a Quantum Wire
Bordone, P.	P02-05	Wigner Function for Identical Particles
Bordone, P.	P02-16	Single Electron Transport and Entanglement Induced by a Surface Acoustic Waves versus Free Ballistic Propagation in Coupled Quantum Wires
Bournel, A.	S01-07	Influence of Ballistic Effects in Ultra-Small MOSFETs
Bournel, A.	S03-07*	3D Monte Carlo Analysis of Discrete Dopant Effects on Electron Noise in Si Devices
Boykin, T.B.	S06-04	Electronic Properties of Silicon Nanowires
Boykin, T.B.	S10-02	Electron Exchange Interaction in Electronically Confined Si Quantum Dots
Brandbyge, M.	P02-08	Modeling of Inelastic Transport in One-Dimensional Metallic Atomic Wires
Branlard, J.	S08-07	Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs
Branlard, J.	P01-20*	Efficient Memory Management for Cellular Monte Carlo Algorithm
Brown, A.R.	S02-06*	Intrinsic Parameter Fluctuations in Conventional MOSFET's at the Scaling Limit: A Statistical Study
Brown, A.R.	P01-09	RTS Amplitudes in Decanano n-MOSFETS with Conventional and High-k Gate Stacks
Brown, A.	P01-25	Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study
Brown, A.R.	P01-30	Tracking the Propagation of Individual Ions through Ion Channels with Nano-MOSFETs
Brunetti, R.	S11-06	A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches
Bushby, R.J.	P02-22	Electronic Transport in Discotic Liquid Crystal Columns
[C]
Cacelli, I.	S09-05	Numerical Investigation of a Molecular Switch Based on Conformational Change, with the Inclusion of Contacts
Cancellieri, E.	P02-05*	Wigner Function for Identical Particles
Carceller, J.E.	P01-22	An Improved Monte Carlo Algorithm for Ionized Impurity Scattering in Bands with Warping, Non-parabolicity and Degeneracy
Carloni, P.	S11-06	A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches
Carrillo, J.A.	P01-06	Accurate Deterministic Numerical Simulation of p-n Junctions
Cavassilas, N.	S06-05	Treatment of Point Defects in Nanowire MOSFETs using the Nonequilibrium Green's Function Formalism
Chassat, C.	S01-07	Influence of Ballistic Effects in Ultra-Small MOSFETs
Chatterjee, A.N.	S11-01	Hierarchical Multiscale Computations of Ion Transport in Synthetic Nanopores
Cheng, C.	P02-06*	Spectral Element Method for the Schrödinger-Poisson System
Cheong, B.H.	P02-14	Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors
Chiney, P.	S08-07*	Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs
Chou, H.M.	P01-12	Simulation of Three-Dimensional Copper-Low-κ Interconnections with Different Shapes
Coppersmith, S.N.	S10-02	Electron Exchange Interaction in Electronically Confined Si Quantum Dots
Cosby, R.M.	P02-25	Fano Resonances through Quantum Dots in Tunable Aharonov-Bohm Rings
Csaba, G.	S09-01	The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development
Csaba, G.	S10-01*	Simulation of Power Gain and Dissipation in Field-Coupled Nanomagnets
Csontos, D.	P01-02	Modeling of Transport through Semiconductor Quantum Dots: An Approach Based on the Direct Solution of the Coupled Poisson-Boltzmann Equations
Csurgay, A.	S10-01	Simulation of Power Gain and Dissipation in Field-Coupled Nanomagnets
Cui, H.L.	P02-15	Examination of Boundary Effects of Resonant Tunneling Structures using Lattice Weyl-Wigner Transport Simulations
[D]
Damle, P.	S09-04	First-Principles Modeling of Molecular I-Vs and Calibration to Experiments
Datta, S.	S05-01*	The NEGF Method: Capabilities and Challenges
Datta, S.	S05-06	Atomistic Simulation of Carbon Nanotube Field-Effect Transistors using Non-Equilibrium Green's Function Formalism
Datta, S.	S09-02	Huckel I-V 3.0: A Self-Consistent Model for Molecular Transport and its Applications
Datta, S.	S09-04	First-Principles Modeling of Molecular I-Vs and Calibration to Experiments
Datta, S.	P02-20	A Microscopic Quantum Simulation of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors
Datta, S.	P02-23	Hybrid- Basis Modeling of Electron Transport through Molecules on Silicon
Decker, S.	P01-07	Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept
Di Carlo, A.	S05-07	Quantum Capacitance Effects in Carbon Nanotube Field-Effect Devices
Di Carlo, A.	S09-01	The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development
Di Carlo, A.	S09-03	Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions
Dollfus, P.	S01-07	Influence of Ballistic Effects in Ultra-Small MOSFETs
Dollfus, P.	S03-07*	3D Monte Carlo Analysis of Discrete Dopant Effects on Electron Noise in Si Devices
Dollfus, P.	P02-18	From Wave-Functions to Current-Voltage Characteristics in Silicon Single Nanocyrstal Coulomb Blockade Devices
Domaingo, A.	P01-03*	Simulation of Schottky Barrier Diodes with a Direct Solver for the Boltzmann-Poisson System
Donarini, A.	S05-05	Modeling of Quantum Nanomechanics
Du, G.	P01-21*	Simulation of Si and Ge UTB MOSFETs using Monte Carlo Method Based on the Quantum Boltzmann Equation
Duffy, C.	P01-04*	Scaling pFET Hot-Electron Injection
Dutta, M.	P02-33	Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments
Dutta, M.	S09-06	Acoustic and Optical Phonons in Nanotubes
[E]
Eisenberg, R.	S11-07	The Role of Long-Range Forces in Porin Channel Conduction
Eisenberg, R.	P01-29	Error Analysis of the Poisson P3M Force Field Scheme for Particle-Based Simulations of Biological Systems
Erikson, M.A.	S10-02	Electron Exchange Interaction in Electronically Confined Si Quantum Dots
Erlen, C.	S09-01	The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development
[F]
Fedoseyev, A.	P01-05*	Robust Computational Models of Quantum Transport in Electronic Devices
Ferrari, G.	P02-05	Wigner Function for Identical Particles
Ferretti, A.	S09-05	Numerical Investigation of a Molecular Switch Based on Conformational Change, with the Inclusion of Contacts
Ferry, D.K.	S05-02	Full Quantum Mechanical Simulation of Ultra-Small Silicon Devices in Three-Dimensions: Physics and Issues
Ferry, D.K.	S05-03	A Quantum Many-Body Density Matrix Model for Sub-Femtosecond Transport in Mesoscopic Structures
Ferry, D.K.	P02-24	Theoretical Evidence of Spontaneous Spin Polarization in GaAs/AlGaAs Split- Gate Heterostructures
Fiori, G.	P02-07*	Code for the 3D Simulation of Nanoscale Semiconductor Devices, including Drift-Diffusion and Ballistic Transport in 1D and 2D Subbands, and 3D Tunneling
Fisher, J.M..	P01-07	Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept
Fischetti, M.V.	S03-01*	Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and to Mainstream VLSI Technology
Flindt, C.	S05-05	Modeling of Quantum Nanomechanics
Frauenheim, T.	S09-03	Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions
Frederiksen, T.	P02-08*	Modeling of Inelastic Transport in One-Dimensional Metallic Atomic Wires
Friesen, M.	S11-07	The Role of Long-Range Forces in Porin Channel Conduction
[G]
Gagliardi, A.	S09-03	Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions
Galdin, S.	S01-07	Influence of Ballistic Effects in Ultra-Small MOSFETs
Galdin, S.	P02-18	From Wave-Functions to Current-Voltage Characteristics in Silicon Single Nanocyrstal Coulomb Blockade Devices
Galdin-Retailleau, S.	S03-07	3D Monte Carlo Analysis of Discrete Dopant Effects on Electron Noise in Si Devices
Gamba, I.M.	P02-19	A High Order Local Solver for Wigner Equation
Gámiz, F.	S03-02*	Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs
Gámiz, F.	P01-06	Accurate Deterministic Numerical Simulation of p-n Junctions
Gehring, A.	S01-01*	Evolution of Current Transport Models for Engineering Applications
Gehring, A.	P02-09*	Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs using the Monte Carlo Method
Gehring, A.	P02-14	Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors
Ghosh, A.W.	S09-02	Huckel I-V 3.0: A Self-Consistent Model for Molecular Transport and its Applications
Ghosh, A.	S09-04	First-Principles Modeling of Molecular I-Vs and Calibration to Experiments
Ghosh, A.	P01-17	Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers
Ghosh, A.	P02-20	A Microscopic Quantum Simulation of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors
Ghosh, A.	P02-21	Atomistic Treatment of Nanotube-Metal Interfaces
Ghosh, A.	P02-23	Hybrid- Basis Modeling of Electron Transport through Molecules on Silicon
Gilbert, M.J.	S05-02	Full Quantum Mechanical Simulation of Ultra-Small Silicon Devices in Three-Dimensions: Physics and Issues
Giles, M.D.	S01-04	A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement
Giles, M.D.	S02-01*	TCAD Process/Device Modeling Challenges and Opportunities for the Next Decade
Girlanda, M.	S09-05*	Numerical Investigation of a Molecular Switch Based on Conformational Change, with the Inclusion of Contacts
Gnani, E.	P02-10*	On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs
Godoy, A.	S03-02	Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs
Godoy, A.	P01-06*	Accurate Deterministic Numerical Simulation of p-n Junctions
Goldsman, N.	S03-03	Phonon-Limited Transport in Carbon Nanotubes Using the Monte Carlo Method
Gómez-Campos, F.M.	P01-22*	An Improved Monte Carlo Algorithm for Ionized Impurity Scattering in Bands with Warping, Non-parabolicity and Degeneracy
González, P.	P01-06	Accurate Deterministic Numerical Simulation of p-n Junctions
Goodnick, S.M.	S03-04	Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AIGaN/GaN HEMTs
Goodnick, S.	S08-07	Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs
Goodnick, S.	P01-20	Efficient Memory Management for Cellular Monte Carlo Algorithm
Grasser, T.	S02-02*	A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices
Guo, J.	S05-06*	Atomistic Simulation of Carbon Nanotube Field-Effect Transistors using Non-Equilibrium Green's Function Formalism
Guo, J.	P01-16	Electrostatics of 3D Carbon Nanotube Field-Effect Transistors
Guo, J.	P01-23	Monte-Carlo Simulation of Carbon Nanotube Devices
[H]
Hagenbeck, R.	P01-07*	Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept
Haibach, P.	P01-07	Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept
Han, R.	P01-21	Simulation of Si and Ge UTB MOSFETs using Monte Carlo Method Based on the Quantum Boltzmann Equation
Harrer, S.	S09-01	The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development
Harrison, P.	P02-31	On the Formation of Periodic Electric Field Domains in p-Si/SiGe Quantum Dots in Cascade Structures
Hasan, S.	S08-06	Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs
Hasan, S.	P01-23*	Monte-Carlo Simulation of Carbon Nanotube Devices
Hassler, P.	P01-04	Scaling pFET Hot-Electron Injection
He, J.	S01-04	A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement
Hedin, E.R.	P02-25	Fano Resonances through Quantum Dots in Tunable Aharonov-Bohm Rings
Heitzinger, C.	S01-03*	Efficient Simulation of the Full Coulomb Interaction in Three Dimensions
Hess, K.	S08-01*	Progress and Issues in the Simulation of Quantum Well Lasers
Hess, K.	S11-02	An Application of Shockleyís Recombination and Generation Theory to Biological Ion Channels
Hesto, P.	P02-18	From Wave-Functions to Current-Voltage Characteristics in Silicon Single Nanocyrstal Coulomb Blockade Devices
Hu, S.	S11-02*	An Application of Shockleyís Recombination and Generation Theory to Biological Ion Channels
[I]
Iannaccone, G.	S02-05*	Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors
Iannaccone, G.	P02-07	Code for the 3D Simulation of Nanoscale Semiconductor Devices, including Drift-Diffusion and Ballistic Transport in 1D and 2D Subbands, and 3D Tunneling
Ikonic, Z.	P02-31*	On the Formation of Periodic Electric Field Domains in p-Si/SiGe Quantum Dots in Cascade Structures
Isler, M.	P01-07	Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept
[J]
Jacoboni, C.	S11-06	A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches
Jacoboni, C.	P02-04	Simulation of Entanglement Dynamics for a Scattering between a Free and a Bound Carrier in a Quantum Wire
Jacoboni, C.	P02-05	Wigner Function for Identical Particles
Jacoboni, C.	P02-16	Single Electron Transport and Entanglement Induced by a Surface Acoustic Waves versus Free Ballistic Propagation in Coupled Quantum Wires
Jauho, A.-P.	S05-05*	Modeling of Quantum Nanomechanics
Jauho, A.-P.	P02-08	Modeling of Inelastic Transport in One-Dimensional Metallic Atomic Wires
Joe, Y.S.	P02-25*	Fano Resonances through Quantum Dots in Tunable Aharonov-Bohm Rings
Joe, Y.S.	P02-30	Manipulating of Resonances in Conductance of an Electron Waveguide with Antidots
Joseph, S.	S11-01*	Hierarchical Multiscale Computations of Ion Transport in Synthetic Nanopores
Jungemann, C.	S01-02*	A Legendre Polynomial Solver for the Langevin Boltzmann Equation
Jungemann, C.	S02-02	A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices
Jungemann, C.	S02-04	TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex, Dual Channel pMOSFETs on (001) Relaxes Si1-yGey
[K]
Kamakura, Y.	P02-17	Quantum Lattice-Gas Automata Simulation of Electronic Wave Propagation in Nanostructures
Kan, E.C.	P02-12	A Critical Examination of the Basis of Macroscopic Quantum Transport Approaches
Kathawala, G.	S08-06	Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs
Kathawala, G.	S11-03	Simulation of Ion Conduction in the ompF Porin Channel using BioMOCA
Kaya, S.	S10-07*	Search for Optimum and Scalable COSMOS
Kaya, S.	P01-14	RF Performance of Strained SiGe pMOSFETs: Linearity and Gain
Kaya, S.	P01-31	Electro-Chemical Modeling Challenges of Biological Ion Pumps
Kelsall, R.W.	P01-24	Monte Carlo Simulations of Phonon Transport in Silicon
Kelsall, R.W.	P02-22	Electronic Transport in Discotic Liquid Crystal Columns
Kelsall, R.W.	P02-31	On the Formation of Periodic Electric Field Domains in p-Si/SiGe Quantum Dots in Cascade Structures
Khan, H.R.	S03-05*	3D Monte Carlo Simulation of FinFET using FMM Algorithm
Khan, T.	P01-08*	Subthreshold Mobility Extraction for SOI-MESFETs
Knezevic, I.	S05-03*	A Quantum Many-Body Density Matrix Model for Sub-Femtosecond Transport in Mesoscopic Structures
Kienle, D.	P02-21*	Atomistic Treatment of Nanotube-Metal Interfaces
Kim, J.S.	P02-25	Fano Resonances through Quantum Dots in Tunable Aharonov-Bohm Rings
Klimeck, G.	S06-04	Electronic Properties of Silicon Nanowires
Klimeck, G.	S10-02	Electron Exchange Interaction in Electronically Confined Si Quantum Dots
Kohanpour, B.	P02-33	Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments
Kosik, R.	S02-02	A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices
Kosina, H.	S02-02	A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices
Kosina, H.	P02-09	Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs using the Monte Carlo Method
Kosina, H.	P02-14	Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors
Krishnan, S.	S08-03*	A Self-Consistent Quantum Mechanical Simulation of P-Channel Strained SiGe MOSFETs
Krishnan, S.	P01-27	Monte Carlo Hole Mobility Calculations with a First Principles Alloy Scattering Approach
Kufluoglu, H.	S01-05	A Unified Modeling of NBTI and Hot Carrier Injection for MOSFET Reliability
Kumar, A.	S03-01*	Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and to Mainstream VLSI Technology
[L]
Labukhin, D.	P02-32*	Three-Dimensional Finite-Difference Time-Domain Simulation of Facet Reflection through Parallel Computing
Laino, V.	abstract	Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers
Lake, R.	S06-04	Electronic Properties of Silicon Nanowires
Lannoo, M.	S06-05	Treatment of Point Defects in Nanowire MOSFETs using the Nonequilibrium Green's Function Formalism
Latessa, L.	S05-07*	Quantum Capacitance Effects in Carbon Nanotube Field-Effect Devices
Latessa, L.	S09-01	The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development
Lau, F.	P01-07	Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept
Laux, S.E.	S03-01*	Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and to Mainstream VLSI Technology
Laux, S.E.	S06-01*	Arbitrary Crystallographic Orientation in QDAME with Ge 7.5 nm DGFET Examples
Leburton, J.-P.	S10-03	Simulation and Optimization of Spin-Qubit Quantum Dot Circuit with Integrated Quantum Point Contact Read-Out
Lee, A.	P01-09*	RTS Amplitudes in Decanano n-MOSFETS with Conventional and High-k Gate Stacks
Lee, J.-W.	P01-10*	Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire FETs
Lee, J.-W.	P01-11*	Investigation of Electrostatic Discharge Characteristics on Low Temperature Polycrystalline Silicon Thin Film Transistors
Lee, J.-W.	P01-12	Simulation of Three-Dimensional Copper-Low-κ Interconnections with Different Shapes
Lee, K.-I.	S11-03*	Simulation of Ion Conduction in the ompF Porin Channel using BioMOCA
Lee, S.	S10-02*	Electron Exchange Interaction in Electronically Confined Si Quantum Dots
Lee, S.	P02-34	Electronic Structure and Optical Transitions in InAsSb/InGaAs Quantum Dots
Lent, C.S.	S10-04	Theoretical Study of Molecular Quantum Dot Cellular Automata
Lent, C.S.	S10-05	Bennett and Landauer Clocking in Quantum-Dot Cellular Automata
Lever, L.	P02-22*	Electronic Transport in Discotic Liquid Crystal Columns
Li, X.	P02-32	Three-Dimensional Finite-Difference Time-Domain Simulation of Facet Reflection through Parallel Computing
Li, Y.	P02-26*	Computer Simulation of Magnetization for Vertically Coupled Nanoscaole Quantum Rings
Li, Y.	P02-33	Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments
Li, Y.	S11-04*	Screening of Water Dipoles Inside Finite-Length Armchair Carbon Nanotubes
Li, Y.	P01-10*	Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire FETs
Li, Y.	P01-11	Investigation of Electrostatic Discharge Characteristics on Low Temperature Polycrystalline Silicon Thin Film Transistors
Li, Y.	P01-12*	Simulation of Three-Dimensional Copper-Low-κ Interconnections with Different Shapes
Li, Y.	P01-13*	A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors
Li, Y.	P01-18	A Computational Intelligent Optical Proximity Correction for Process Distortion Compensation of Layout Mask in Subwavelength Era
Li, Y.	P01-28*	A Comparative Study of Numerical Algorithms in Calculating Eigenpairs of the Master Equation for Protein Folding Kinetics
Liang, G.-C.	S09-04	First-Principles Modeling of Molecular I-Vs and Calibration to Experiments
Liang, G.	P02-23*	Hybrid- Basis Modeling of Electron Transport through Molecules on Silicon
Lilja, K.	S02-03	Multi-Dimensional Tunneling in Density-Gradient Theory
Lin, H.Y.	P01-11	Investigation of Electrostatic Discharge Characteristics on Low Temperature Polycrystalline Silicon Thin Film Transistors
Liu, M.	S10-05	Bennett and Landauer Clocking in Quantum-Dot Cellular Automata
Liu, Q.H.	P02-06	Spectral Element Method for the Schrödinger-Poisson System
Liu, X.	P01-21	Simulation of Si and Ge UTB MOSFETs using Monte Carlo Method Based on the Quantum Boltzmann Equation
Liu, Y.	P01-13B*	Local Discontinuous Galerkin Methods for Moment Models in Device Simulations: Formulation and One Dimensional Results
Lorente, N.	P02-08	Modeling of Inelastic Transport in One-Dimensional Metallic Atomic Wires
Lu, D.	S11-04	Screening of Water Dipoles Inside Finite-Length Armchair Carbon Nanotubes
Lu, Y.	S10-04*	Theoretical Study of Molecular Quantum Dot Cellular Automata
Lugli, P.	S05-07	Quantum Capacitance Effects in Carbon Nanotube Field-Effect Devices
Lugli, P.	S09-01*	The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development
Lugli, P.	S09-03	Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions
Lugli, P.	S10-01	Simulation of Power Gain and Dissipation in Field-Coupled Nanomagnets
Luisier, M.	S08-02	Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers
Lundstrom, M.	S05-06	Atomistic Simulation of Carbon Nanotube Field-Effect Transistors using Non-Equilibrium Green's Function Formalism
Lundstrom, M.	S08-06	Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs
Lundstrom, M.	P01-16	Electrostatics of 3D Carbon Nanotube Field-Effect Transistors
Lundstrom, M.	P01-17	Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers
Lundstrom, M.	P01-23	Monte-Carlo Simulation of Carbon Nanotube Devices
Lundstrom, M.	P02-20	A Microscopic Quantum Simulation of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors
Lundstrom, M.	P02-21	Atomistic Treatment of Nanotube-Metal Interfaces
[M]
Ma, W.	P01-14*	RF Performance of Strained SiGe pMOSFETs: Linearity and Gain
Macucci, M.	S09-05	Numerical Investigation of a Molecular Switch Based on Conformational Change, with the Inclusion of Contacts
Macucci, M.	P02-11*	High-Resolution Numerical Study of Conductance and Noise Imaging of Mesoscopic Devices
Mamaluy, D.	S06-02	Self-Consistent Contact Block Reduction Method for Ballistic Nanodevices
Marconcini, P.	P02-11	High-Resolution Numerical Study of Conductance and Noise Imaging of Mesoscopic Devices
Marreiro, D.	S11-07	The Role of Long-Range Forces in Porin Channel Conduction
Marreiro, D.	P01-29*	Error Analysis of the Poisson P3M Force Field Scheme for Particle-Based Simulations of Biological Systems
Martinez, A.	P02-03	Vortex Flows in Semiconductor Device Quantum Channels: Time-Dependent Simulation
Massoud, H.Z.	P02-06	Spectral Element Method for the Schrödinger-Poisson System
Matagne, P.	S01-04	A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement
Matsuda, K.	P01-15	Strain-Dependent Hole Masses and Piezoresistive Properties of Silicon
Mayergoyz, I.	P01-01	Random Doping Fluctuations of Small-Signal Parameters in Nanoscale Semiconductor Devices
Mayergoyz, I.D.	P02-27*	Modeling of the Electrostatic (Plasmon) Resonances In Metallic and Semiconductor Nanoparticles
Meinerzhagen, B.	S01-02	A Legendre Polynomial Solver for the Langevin Boltzmann Equation
Meinerzhagen, B.	S02-02	A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices
Meinerzhagen, B.	S02-04	TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex, Dual Channel pMOSFETs on (001) Relaxes Si1-yGey
Melnikov, D.	S10-03	Simulation and Optimization of Spin-Qubit Quantum Dot Circuit with Integrated Quantum Point Contact Read-Out
Mikolajick, T.	P01-07	Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept
Millar, C.	P01-30*	Tracking the Propagation of Individual Ions through Ion Channels with Nano-MOSFETs
Miyoshi, T.	S08-05	Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation
Mori, N.	S08-04*	Three-Dimensional Quantum Transport Simulation of Ultra-Small FinFETs
Mori, N.	P02-13	Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors
Mouis, N..	P02-01	Simulation Schemes in 2D Nanoscale MOSFET's: WKB Based Method
Munteanu, D.	S06-05	Treatment of Point Defects in Nanowire MOSFETs using the Nonequilibrium Green's Function Formalism
[N]
Narayanan, N.	P02-12*	A Critical Examination of the Basis of Macroscopic Quantum Transport Approaches
Nedjalkov, M.	S03-06*	A Self-Consistent Event Biasing Scheme for Statistical Enhancement
Negulescu, C.	P02-01	Simulation Schemes in 2D Nanoscale MOSFET's: WKB Based Method
Neophytou, N.	P01-16	Electrostatics of 3D Carbon Nanotube Field-Effect Transistors
Nguyen, C.D.	S02-04*	TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex, Dual Channel pMOSFETs on (001) Relaxes Si1-yGey
Niehaus, T.	S09-03	Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions
Novotny, T.	S05-05	Modeling of Quantum Nanomechanics
[O]
Obradovic, B.	S01-04*	A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement
Odermatt, S.	S08-02	Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers
Ogawa, M.	S08-05	Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation
Oka, H.	S06-03	Analysis of Strained-Si Device Including Quantum Effect
Okamoto, M.	P02-13*	Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors
Oyafuso, F.	S10-02	Electron Exchange Interaction in Electronically Confined Si Quantum Dots
Oyafuso, F.	P02-34	Electronic Structure and Optical Transitions in InAsSb/InGaAs Quantum Dots
[P]
Park, W.J.	S11-03	Simulation of Ion Conduction in the ompF Porin Channel using BioMOCA
Park, W.J.	P02-14	Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors
Paulsson, M.	S09-02	Huckel I-V 3.0: A Self-Consistent Model for Molecular Transport and its Applications
Pavlov, B.S.	P02-28*	Resonance Spin Filter
Pecchia, A.	S05-07	Quantum Capacitance Effects in Carbon Nanotube Field-Effect Devices
Pecchia, A.	S09-01	The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development
Pecchia, A.	S09-03*	Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions
Pennington, G.	S03-03*	Phonon-Limited Transport in Carbon Nanotubes Using the Monte Carlo Method
Pham, A.T.	S02-04	TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex, Dual Channel pMOSFETs on (001) Relaxes Si1-yGey
Piccinini, E.	S11-06	A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches
Polizzi, E.	S05-04*	Numerical Parallel Algorithms for Large-Scale Nanoelectronics Simulations using NESSIE
Polizzi, E.	S09-02	Huckel I-V 3.0: A Self-Consistent Model for Molecular Transport and its Applications
Polizzi, E.	P02-01	Simulation Schemes in 2D Nanoscale MOSFET's: WKB Based Method
Polizzi, E.	P02-20	A Microscopic Quantum Simulation of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors
Porod, W.	S10-01	Simulation of Power Gain and Dissipation in Field-Coupled Nanomagnets
Pourfath, M.	P02-14*	Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors
Przekwas, A.	P01-05*	Robust Computational Models of Quantum Transport in Electronic Devices
[R]
Rahman, A.	P01-17	Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers
Raichura, A.	S09-06	Acoustic and Optical Phonons in Nanotubes
Rakowski, R.F.	P01-31*	Electro-Chemical Modeling Challenges of Biological Ion Pumps
Rakshit, T.	S09-04*	First-Principles Modeling of Molecular I-Vs and Calibration to Experiments
Rakshit, T.	P02-23	Hybrid- Basis Modeling of Electron Transport through Molecules on Silicon
Ramadurai, D.	P02-33	Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments
Ravaioli, U.	S08-06	Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs
Ravaioli, U.	S11-03	Simulation of Ion Conduction in the ompF Porin Channel using BioMOCA
Ravaioli, U.	S11-04	Screening of Water Dipoles Inside Finite-Length Armchair Carbon Nanotubes
Ravaioli, U.	S11-05	A Coupled 3-D PNP/ECP Model for Ion Transport in Biological Ion Channels
Ravishankar, R.	S08-06*	Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs
Raychowdhury, A.	S10-06	Circuit Modeling of Carbon Nanotube Interconnects and Their Performance Estimation in VLSI Design
Recine, G.	P02-15*	Examination of Boundary Effects of Resonant Tunneling Structures using Lattice Weyl-Wigner Transport Simulations
Reggiani, S.	P02-10	On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs
Riddet, C.	P01-25*	Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study
Ringhofer, C.	S01-03	Efficient Simulation of the Full Coulomb Interaction in Three Dimensions
Ringhofer, C.	P02-02	Quantum Potential Approach to Modeling Nano-MOSFETs
Rivas, C.	S06-04	Electronic Properties of Silicon Nanowires
Rodríguez-Bolívar, S.	P01-22	An Improved Monte Carlo Algorithm for Ionized Impurity Scattering in Bands with Warping, Non-parabolicity and Degeneracy
Rodríguez-Salazar, F.	P02-29*	Hilbert Graph: An Expandable Interconnection for Clusters
Rosini, M.	P02-16*	Single Electron Transport and Entanglement Induced by a Surface Acoustic Waves versus Free Ballistic Propagation in Coupled Quantum Wires
Rossen, R.	P02-15	Examination of Boundary Effects of Resonant Tunneling Structures using Lattice Weyl-Wigner Transport Simulations
Rotkin, S.V.	S11-04	Screening of Water Dipoles Inside Finite-Length Armchair Carbon Nanotubes
Roy, G.	S02-06	Intrinsic Parameter Fluctuations in Conventional MOSFET's at the Scaling Limit: A Statistical Study
Roy, K.	S10-06	Circuit Modeling of Carbon Nanotube Interconnects and Their Performance Estimation in VLSI Design
Roy, S.	S02-06	Intrinsic Parameter Fluctuations in Conventional MOSFET's at the Scaling Limit: A Statistical Study
Roy, S.	P01-09	RTS Amplitudes in Decanano n-MOSFETS with Conventional and High-k Gate Stacks
Roy, S.	P01-25	Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study
Roy, S.	P01-30	Tracking the Propagation of Individual Ions through Ion Channels with Nano-MOSFETs
Royo, P.	S08-02	Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers
Rudan, M.	S11-06	A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches
Rudan, M.	P02-10	On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs
[S]
Sabathil, M.	S06-02	Self-Consistent Contact Block Reduction Method for Ballistic Nanodevices
Saini, V.	P02-33	Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments
Saint Martin, J.	S01-07	Influence of Ballistic Effects in Ultra-Small MOSFETs
Sakai, A.	P02-17*	Quantum Lattice-Gas Automata Simulation of Electronic Wave Propagation in Nanostructures
Sameh, A.	S05-04	Numerical Parallel Algorithms for Large-Scale Nanoelectronics Simulations using NESSIE
Sampedro, C.	S03-02	Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs
Saraniti, M.	S03-04	Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AIGaN/GaN HEMTs
Saraniti, M.	S08-07	Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs
Saraniti, M.	S11-07	The Role of Long-Range Forces in Porin Channel Conduction
Saraniti, M.	P01-20	Efficient Memory Management for Cellular Monte Carlo Algorithm
Saraniti, M.	P01-29	Error Analysis of the Poisson P3M Force Field Scheme for Particle-Based Simulations of Biological Systems
Satanin, A.M.	P02-25	Fano Resonances through Quantum Dots in Tunable Aharonov-Bohm Rings
Satanin, A.M.	P02-30*	Manipulating of Resonances in Conductance of an Electron Waveguide with Antidots
Scarpa, G.	S09-01	The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development
Schulten, K.	S11-04	Screening of Water Dipoles Inside Finite-Length Armchair Carbon Nanotubes
Schürrer, F.	P01-03*	Simulation of Schottky Barrier Diodes with a Direct Solver for the Boltzmann-Poisson System
Sée, J.	P02-18*	From Wave-Functions to Current-Voltage Characteristics in Silicon Single Nanocyrstal Coulomb Blockade Devices
Selberherr, S.	S01-01	Evolution of Current Transport Models for Engineering Applications
Selberherr, S.	S02-02	A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices
Selberherr, S.	P02-14	Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors
Sethuraman, A.	P02-33	Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments
Shi, J.	P02-19*	A High Order Local Solver for Wigner Equation
Shi, P.	P02-33	Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments
Shifren, L.	S01-04	A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement
Shu, C.W.	P01-13B	Local Discontinuous Galerkin Methods for Moment Models in Device Simulations: Formulation and One Dimensional Results
Siddiqui, L.	S09-02	Huckel I-V 3.0: A Self-Consistent Model for Molecular Transport and its Applications
Solomon, P.M.	S03-01*	Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and to Mainstream VLSI Technology
Stettler, M.	S01-04	A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement
Streiff, M.	S08-02	Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers
Stroscio, M.A.	S09-06	Acoustic and Optical Phonons in Nanotubes
Stroscio, M.A.	P02-33*	Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments
Svizhenko, A.	S08-05	Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation
[T]
Takeda, H.	S08-04*	Three-Dimensional Quantum Transport Simulation of Ultra-Small FinFETs
Tanabe, R.	S06-03*	Analysis of Strained-Si Device Including Quantum Effect
Tang, T.-W.	P01-26	The Effective Conduction-Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation
Taniguchi, K.	P02-17	Quantum Lattice-Gas Automata Simulation of Electronic Wave Propagation in Nanostructures
Tempel, G.	P01-07	Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept
Thornton, T.J.	P01-08	Subthreshold Mobility Extraction for SOI-MESFETs
Tsuchiya	S08-05*	Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation
Turowski, M.	P01-05*	Robust Computational Models of Quantum Transport in Electronic Devices
[U]
Ulloa, S.	P01-02	Modeling of Transport through Semiconductor Quantum Dots: An Approach Based on the Direct Solution of the Coupled Poisson-Boltzmann Equations
Ungersboeck, E.	P02-14	Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors
[V]
Vaidyanathan, M.	P01-23	Monte-Carlo Simulation of Carbon Nanotube Devices
van der Straaten, T.A.	S11-03	Simulation of Ion Conduction in the ompF Porin Channel using BioMOCA
van der Straaten, T.A.	S11-05	A Coupled 3-D PNP/ECP Model for Ion Transport in Biological Ion Channels
Van Schilfgaarde, M.	P01-27	Monte Carlo Hole Mobility Calculations with a First Principles Alloy Scattering Approach
Vasileska, D.	S01-03	Efficient Simulation of the Full Coulomb Interaction in Three Dimensions
Vasileska, D.	S03-05	3D Monte Carlo Simulation of FinFET using FMM Algorithm
Vasileska, D.	S03-06	A Self-Consistent Event Biasing Scheme for Statistical Enhancement
Vasileska, D.	S08-03	A Self-Consistent Quantum Mechanical Simulation of P-Channel Strained SiGe MOSFETs
Vasileska, D.	P01-08	Subthreshold Mobility Extraction for SOI-MESFETs
Vasileska, D.	P01-27	Monte Carlo Hole Mobility Calculations with a First Principles Alloy Scattering Approach
Vasileska, D.	P02-02	Quantum Potential Approach to Modeling Nano-MOSFETs
Vasileska, D	P02-24	Theoretical Evidence of Spontaneous Spin Polarization in GaAs/AlGaAs Split- Gate Heterostructures
Velázquez, J.E.	S03-07	3D Monte Carlo Analysis of Discrete Dopant Effects on Electron Noise in Si Devices
Vez, D.	S08-02	Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers
Vogl, P.	S06-02	Self-Consistent Contact Block Reduction Method for Ballistic Nanodevices
von Allmen, P.	S10-02	Electron Exchange Interaction in Electronically Confined Si Quantum Dots
von Allmen, P.	P02-34*	Electronic Structure and Optical Transitions in InAsSb/InGaAs Quantum Dots
[W]
Wang, J.	P02-20*	A Microscopic Quantum Simulation of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors
Wang, X.	S01-04	A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement
Wartak, M.S.	P01-05*	Robust Computational Models of Quantum Transport in Electronic Devices
Watling, J.R.	S01-06	Simulations of Sub-100nm Strained Si MOSFETs with High-κ Gate Stacks
Watling, J.R.	P01-25	Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study
Witzig, A.	S08-02	Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers
Witzigmann, B.	S08-02*	Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers
Wu, B.	P01-26	The Effective Conduction-Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation
[X]
Xia, Z.	P01-21	Simulation of Si and Ge UTB MOSFETs using Monte Carlo Method Based on the Quantum Boltzmann Equation
Xu, J.	P01-27	Monte Carlo Hole Mobility Calculations with a First Principles Alloy Scattering Approach
[Y]
Yafyasov, A.M.	P02-28	Resonance Spin Filter
Yamakawa, S.	S03-04*	Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AIGaN/GaN HEMTs
Yamasaki, T.	S06-03	Analysis of Strained-Si Device Including Quantum Effect
Yang, L.	S01-06*	Simulations of Sub-100nm Strained Si MOSFETs with High-κ Gate Stacks
Yang, Z.	S11-05	A Coupled 3-D PNP/ECP Model for Ion Transport in Biological Ion Channels
Yu, S.-M.	P01-13	A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors
Yu, S.-M.	P01-18*	A Computational Intelligent Optical Proximity Correction for Process Distortion Compensation of Layout Mask in Subwavelength Era
[Z]
Zahid, F.	S09-02*	Huckel I-V 3.0: A Self-Consistent Model for Molecular Transport and its Applications
Zhang, L.	S10-03	Simulation and Optimization of Spin-Qubit Quantum Dot Circuit with Integrated Quantum Point Contact Read-Out
Zhang, Z.	P02-27	Modeling of the Electrostatic (Plasmon) Resonances In Metallic and Semiconductor Nanoparticles
Zheng, Y.	S06-04*	Electronic Properties of Silicon Nanowires
Zorman, B.	P01-27*	Monte Carlo Hole Mobility Calculations with a First Principles Alloy Scattering Approach