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P:01 Using vacancy transport to unify memristor models Isaac Abraham, University of Washington, USA
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P:02 Position dependent performance in 5 nm vertically stacked lateral Si nanowires transistors Talib Al-Ameri, University of Glasgow, UK
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P:03 The impact of interface traps and self-heating in the degradation of the 4H-SiC VDMOSFET performance Brendan Ubochi, Swansea University, UK
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P:04 TCAD analysis of discrete dopant effect on variability of tunnel field effect transistor Hidehiro Asai, National Institute of Advanced Industrial Science and Technology, Japan
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P:05 Characterization of topological phase transitions in silicene and other 2D gapped Dirac materials Juan Carlos, Bolívar Fernández, Instituto Carlos I de Física Teórica y Computacional, Spain
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P:06 Study of ballistic transport in phosphorene-nanoribbon- FETs using empirical pseudopotentials William Vandenberghe, The University of Texas at Dallas, USA
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P:07 Power dissipation and noise in spin-wave-based computing systems Wolfgang Porod, Pazmany Peter Catholic University, Hungary
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P:08 Quantization and analysis of acoustic modes in a rectangular microsound nanowaveguide fixed on a rigid substrate Michael Stroscio, University of Illinois at Chicago, USA
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P:09 Effect of quantum confinement on lifetime of anharmonic decay of optical phonon in a confined GaAs structure Michael Stroscio, University of Illinois at Chicago, USA
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P:10 Quantized acoustic-phonon modes in a non-piezoelectric nanowaveguide Michael Stroscio, University of Illinois at Chicago, USA
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P:11 Quantized acoustic-phonon shear horizontal modes in a piezoelectric nanoresonator Michael Stroscio, University of Illinois at Chicago, USA
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P:12 Exchange-coupled majority logic gate Wolfgang Porod, University of Notre Dame, USA
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P:13 Multi-subband ensemble monte carlo simulator for 3D electron devices Luca Donetti, Universidad de Granada, Spain
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P:14 Charge corrections from exact electrostatics for metal-oxide interfaces Thomas Durrant, University College London, UK
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P:15 Monte Carlo simulations of electron transport in bulk GaN Simon Forster, Swansea University, UK
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P:16 Scaling of Tunnel FETs Koichi Fukuda, AIST, Japan
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P:17 Monte Carlo analysis of impact ionization processes and band-to-band tunneling in InxGa1-xAs PIN ungated devices Beatriz García Vasallo, University of Salamanca, Spain
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P:18 Multi-scale nonequilibrium green’s function method for LEDs: Balance of thermalization and tunneling Gerhard Klimeck, Purdue University, USA
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P:19 Electron and hole mobility calculation in GeSn alloys Zoran Ikonic, University of Leeds, UK
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P:20 Transport modelling and design of GaN/AlN based unipolar (opto-)electronic devices, and interface quality effects Zoran Ikonic, University of Leeds, UK
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P:21 Investigation of hot-carrier effects using a backward Monte Carlo method and full bands Markus Kampl, TU Wien, Austria
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P:22 Lindblad-based Markov approach to spatiotemporal quantum dynamics of wave packets in nanostructures Frank Lengers, Universität Münster, Germany
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P:23 Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETs Demetrio Logoteta, Aix Marseille Université, France
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P:24 Towards a full self - consistently coupled drift diffusion and Monte Carlo simulator to model silicon heterojunction solar cells Dragica Vasileska, Arizona State University, USA
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P:25 Characterisation of a tunnel field-effect transistor using 2D TCAD simulations Daniel Nagy, University of Santiago de Compostela, Spain
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P:26 Impact of layer rotational misalignment on the transport properties of van der Waals tunnel field effect transistors Marco Pala, Center for Nanoscience et Nanotechnology, France
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P:27 Do we really need the collapse law when modelling quantum transport in electron devices? Zhen Zhan, Universitat Autònoma de Barcelona, Spain
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P:28 Electric field modulation of phosphorene nanoribbons’ electronic properties Irena Knezevic, University of Wisconsin-Madison, USA
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P:29 Hole Trapping in Amorphous HfO2 and Al2O3 as a source of positive charging Jack Strand, University College London, UK
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P:30 Electron transport in defective metallic and semiconducting carbon nanotubes: An improved RGF-based O(N) approach Fabian Teichert, TU Dresden, Germany
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P:31 A mobility model for TCAD simulation of current variation by random discrete dopant Ho In Yu, Seoul National University, South Korea
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P:32 Spin recovery in the 25 nm gate length InGaAs field effect transistor Ben Thorpe, Swansea University, UK
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P:33 Computing interfacial properties of polypyrrole on diamond nanoparticles for photovoltaic applications Petra Matunová, Institute of Physics of the Czech Academy of Sciences, Czech Republic
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P:34 Wigner modelling of surface roughness in quantum wires Mihail Nedjalkov, TU Wien, Austria
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P:35 NEGF through finite-volume discretization Hans Kosina, TU Wien, Austria
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