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Session: 2D Semiconductors
Session chair: Michael Stroscio, The University of Illinois at Chicago, USA
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09:00
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(Invited) Transistors based on heterostructures of 2D materials
Giuseppe Iannaccone, Università di Pisa, Italy
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09:30
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Monte Carlo study of high field transport in some transition metal di-chalcogenides
David Ferry, Arizona State University, USA
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09:45
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Stark effect in the photoluminescence of transition metal dichalcogenide structures
James Charles, Purdue University, USA
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10:00
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Theoretical study of charge transport in mono- and bi-layer phosphorene using full-band Monte Carlo simulations
Gautam Gaddemane, University of Texas at Dallas, USA
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10:15
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Effects of uniaxial strain on phosphorene tunneling field-effect transistors
Junbeom Seo, Korea Advanced Institute of Science and Technology, South Korea
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10:30
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Understanding resistive switching mechanism of interfacial phase change memory by topological super-lattice and topological phase of interface states
Hisao Nakamura, AIST, Japan
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10:45
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Refreshments and exhibition
Gallery Lounge
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Session: Photonics/optoelectronics/plasmonics
Session chair: David Ferry, Arizona State University, USA
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11:15
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(Invited) Multiscale modelling of the impact of intrinsic disorder and localisation effects on the optical and electronic properties of III-N LEDs
Eoin O'Reilly, Tyndall Institute, Ireland
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11:45
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Unified numerical solver for modeling metastability and reliability of CdTe solar cells
Dragica Vasileska, Arizona State University, USA
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12:00
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Systematic study of quantum dot laser emission controlled by coherent phonon wave packets
Daniel Wigger, Universität Münster, Germany
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12:15
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Density matrix model for bound to continuum terahertz quantum cascade lasers
Aleksandar Demic, University of Leeds, UK
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12:30
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Simulation of a midinfrared quantum cascade laser using a density-matrix formalism
Irena Knezevic, University of Wisconsin, Madison, USA
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| 12:45 |
Lunch
Gallery Lounge
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Session: Device Simulations
Session chair: William Vandenberghe, University of Texas at Dallas, USA
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| 14:30 |
(Invited) Transport modeling for plasma waves in THz devices
Christoph Jungemann, RWTH Aachen University, Germany
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| 15:00 |
Metal grain work-function variability in GAA Si nanowire via a fluctuation sensitivity map
Natalia Seoane-Iglesias, Universidade de Santiago de Compostela, Spain
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| 15:15 |
Variability-aware simulations of 5 nm vertically stacked lateral Si nanowires transistors
Talib Al-Ameri, University of Glasgow, UK
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| 15:30 |
Simulation of negative differential transconductance from devices fabricated using conventional CMOS technology
Pratik B Vyas, University of Texas at Dallas, USA,
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| 15:45 |
Physically based diagonal treatment of polar optical phonons in III-V p-type double-gate transistors: comparison of InAs vs Ge and Si
Manel Moussavou, Aix Marseille Universite, France
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| 16:00 |
Refreshments
Gallery Lounge
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Session: Device Simulations
Session chair: William Vandenberghe, University of Texas at Dallas, USA
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| 16:30 |
3D Monte Carlo simulations of strained Si GAA nanowire FETs with different channel orientations
Karol Kalna, Swansea University, UK
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| 16:45 |
Spin-dependent trap-assisted tunneling in magnetic tunnel junctions: A Monte Carlo study
Josef Weinbub, TU Wien, Austria
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| 17:00 |
Full band Monte Carlo simulation of high- field transport in Si nanowires
Stephen Goodnick, Arizona State Univesity, USA
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| 18:15 |
Private charter on Miss Lakeland followed by Conference dinner
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